A reconfigurable memristor diode based on a CuInP2S6/graphene lateral heterojunction

Abstract

The conventional reconfiguration of transistors requires an additional independent terminal for controllable gate input, which complicates the device structure and makes circuit integration difficult. In this work, we propose a reconfigurable diode based on a 2D layered copper indium thiophosphate (CIPS) and graphene (Gr) van der Waals lateral heterojunction, exhibiting distinctively bias-dependent reconfiguration. The reconfiguration characteristics include reversible memristive behaviors with a current on/off ratio of about 10³ and switchable rectifying polarity with a rectifying ratio of up to 3 × 10³. This reconfigurable mechanism arises from the lateral bias-induced migration of Cu⁺ ions, effectively modulating the barrier height at the CIPS and Gr interface. This work provides a simplified reconfigurable solution for electrostatically modulated circuits.