ALD and CVD deposition of pure thin gold films from a stable dimethylgold(iii) precursor

Abstract

The synthesis and thermal properties of a volatile dimethylgold(III) complex Me₂AuSSP(OⁱPr)₂ are reported. Unlike most other volatile Au(I) and Au(III) compounds, the complex is stable upon storage, does not require any special handling conditions, and exhibits both good volatility and thermal stability. The compound was tested as a CVD and ALD precursor, yielding good quality films in both processes. The influence of hydrogen and vacuum ultraviolet on the morphology and composition of the gold films in CVD processes was investigated. The growth rate in ALD experiments was from 0.47 to 1.13 Å per cycle at deposition temperatures of 130–170 °C. Both CVD and ALD grown films exhibited a polycrystalline structure, a high conductivity (3.1–55.7 μΩ cm) and a low amount of impurities (<6 at%).