Issue 3, 2025

Vertical graphene and nanodiamond composited films prepared by loading monodispersed molybdenum atoms and annealing

Abstract

Graphene/nanodiamond composited films, normally prepared by chemical vapor deposition, have attracted considerable attention due to their exceptional performance in terms of electrochemical properties, hardness and wear resistance. Here, we propose a method for preparing graphene/nanodiamond composited films by loading Mo atoms on vertical graphene sheets (VGs) and annealing them to let graphene transition to diamond under ordinary pressure. Using this method, graphene/nanodiamond composited films with different contents of diamond were prepared. It was found that after annealing at 700 °C under ordinary pressure, monodispersed Mo atoms were uniformly distributed on VGs, and a large amount of graphene transitioned to diamond, resulting in significantly reduced background current and electrochemical active area. When the annealing temperature was increased to 1100 °C, the Mo atoms agglomerated, and only a small amount of graphene transitioned to diamond, resulting in a higher content of graphene and a smaller content of diamond compared with the 700 °C annealed sample, possessing high background current and high electrochemically active area. This suggests that better dispersed Mo atoms lead to more VGs-to-diamond transition under ordinary pressure. This study provides a method for preparing graphene/nanodiamond composited films and also a way to control the content of diamond by annealing Mo-atom-loaded VGs under different temperatures.

Graphical abstract: Vertical graphene and nanodiamond composited films prepared by loading monodispersed molybdenum atoms and annealing

Supplementary files

Article information

Article type
Paper
Submitted
01 Jul 2024
Accepted
04 Nov 2024
First published
21 Nov 2024

J. Mater. Chem. C, 2025,13, 1338-1344

Vertical graphene and nanodiamond composited films prepared by loading monodispersed molybdenum atoms and annealing

C. Chen, C. He, L. Hong and X. Hu, J. Mater. Chem. C, 2025, 13, 1338 DOI: 10.1039/D4TC02780A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements