Issue 13, 2025

Engineering the electronic structures and ferromagnetism of Fe2C monolayers via surface functionalization

Abstract

To further advance the potential applications of Fe2C monolayers in cutting-edge spintronic devices, the structural, electronic and magnetic properties of two-dimensional transition metal carbide Fe2C were engineered via surface functionalization using the first-principles calculations. Results showed that all the symmetrically and asymmetrically functionalized Fe2CTT′ (T, T′ = H, F, Cl, and Br) monolayers, except the Fe2CFBr monolayer, were dynamically stable. They exhibited intrinsic ferromagnetism, high magnetic anisotropy energy and high spin polarization. Additionally, the Fe2CH2, Fe2CHF, Fe2CHCl, and Fe2CHBr monolayers exhibited ferromagnetic metal properties, whereas Fe2CCl2 and Fe2CClBr monolayers were half-metallic ferromagnets with 100% spin polarization. In particular, the Fe2CF2, Fe2CBr2 and Fe2CFCl monolayers were classified as bipolar magnetic semiconductors (BMSs) owing to their distinctive band structures. In BMSs, fully spin-polarized currents could be generated and easily controlled, and the carrier's spin orientation could also be reversed by changing the sign of the applied gate voltage. Notably, the Curie temperatures of Fe2CF2 and Fe2CFCl at 988 K and 995 K, respectively, were higher than that of the primitive monolayer Fe2C. Thus, these results show that optimizing the Fe2C monolayer via surface functionalization can improve the performance and extend its potential applications in the field of spintronics.

Graphical abstract: Engineering the electronic structures and ferromagnetism of Fe2C monolayers via surface functionalization

Supplementary files

Article information

Article type
Paper
Submitted
26 Oct 2024
Accepted
09 Feb 2025
First published
14 Feb 2025

J. Mater. Chem. C, 2025,13, 6896-6906

Engineering the electronic structures and ferromagnetism of Fe2C monolayers via surface functionalization

X. He, Y. Lou, D. Wu and J. Xie, J. Mater. Chem. C, 2025, 13, 6896 DOI: 10.1039/D4TC04570J

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