Progress in the fabrication of high-purity semiconducting carbon nanotube arrays

Abstract

Semiconductor single-walled carbon nanotubes (s-SWCNTs) are a class of one-dimensional nanomaterials with unique structure and properties. Owing to their high conductivity and carrier mobility, s-SWCNTs are ideal materials for the fabrication of high-speed, low-power field-effect transistors (FETs) and other electronic components. Network s-SWCNTs are prone to electron scattering and local blocking, while array s-SWCNTs are highly ordered, providing a more direct and uniform charge transport channel, which is conducive to improving the performance of electronic devices. At present, the main methods for preparing s-SWCNT arrays are chemical vapor deposition (CVD) and post-treatment of synthesized CNTs. Herein, we discuss the principle, research progress, advantages and disadvantages of various methods for the preparation of s-SWCNTs and describe the properties of devices prepared by different methods, future research prospects and development directions.