Issue 8, 2025

Vanillin-grafted organosilicon backbone polyimide resins with low dielectric, reprocessing and monomer recovery properties

Abstract

To meet the needs of the contemporary microelectronics industry and sustainability strategies, a series of organosilicon polyimide resins (V–Si@PI-x) have been prepared through an aldehyde–amine condensation reaction using vanillin as a renewable bio-based feedstock. The aldehyde–amine condensation reaction cleverly avoided highly polar amino groups and introduced fluorine-containing groups simultaneously. So, the series of V–Si@PI-x as a whole exhibited low dielectric constant (<3.1) and dielectric loss (<0.01), with V–Si@PI-5 exhibiting a dielectric constant as low as 2.33 and a dielectric loss as low as 0.003. The three-dimensional network in the V–Si@PI-x series featured a high density (>3800 mol m−3) of imine bonds as cross-linking points, which allowed rapid polymer network rearrangement under external pressure and heat, resulting in a reprocessing process in 8 min. In a weak acidic environment, the degradation of the series V–Si@PI-x was accomplished within 5 min, leveraging the solubility difference to effectively recover the V-D4 monomer. The series V–Si@PI-x exhibited mechanical properties superior to those of conventional silicone resins (tensile strength around 5 MPa), with the tensile strength and modulus exceeding 8.4 MPa and 1 GPa, respectively. In addition, the high hydrophobicity (WCA over 110°) and low water absorption (0.35–0.96%) favored the practical application of the series V–Si@PI-x in the microelectronics industry.

Graphical abstract: Vanillin-grafted organosilicon backbone polyimide resins with low dielectric, reprocessing and monomer recovery properties

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Article information

Article type
Paper
Submitted
27 Oct 2024
Accepted
18 Dec 2024
First published
23 Dec 2024

J. Mater. Chem. C, 2025,13, 3860-3871

Vanillin-grafted organosilicon backbone polyimide resins with low dielectric, reprocessing and monomer recovery properties

G. Yuan, H. Yang, Z. Liu, Y. Zhang, Y. Tao, B. Yang, K. Wu, J. Shi and L. Yang, J. Mater. Chem. C, 2025, 13, 3860 DOI: 10.1039/D4TC04573D

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