Issue 8, 2025

III–V semiconductor wires for optical switches in solid-state lasers

Abstract

Micro-/nano-materials have remarkably attracted research attention over the past two decades due to their unique structure-dependent optoelectronic properties. Particularly, semiconductor wires (SWs) have become fundamental materials for photonic devices owing to their inherent confinement effects as linear structures. Their electrical and optical properties can be altered by controlling their diameter, strain and composition, providing a unique platform for studying light generation, amplification, propagation, detection and modulation. This work reviews recent developments of III–V SWs as optical switches in bulk laser applications. The structural characteristics of III–V SWs for optical switch applications are introduced, followed by a discussion on the nonlinear optical properties of various SWs and their applications in solid-state lasers (SSLs). The influence of strain and diameter on the properties of SWs is summarized, along with the effects of morphology on the thermal conductivity of these wires. Finally, the challenges that lie ahead in this field are presented. Future research efforts are needed to further optimise the growth techniques of SWs, achieving precise control over their size and composition to tune their optoelectronic performance. Additionally, systematic studies on the strain effects and structural defects in SWs of different diameters will help maximise their performance in practical applications.

Graphical abstract: III–V semiconductor wires for optical switches in solid-state lasers

Article information

Article type
Review Article
Submitted
25 Nov 2024
Accepted
23 Jan 2025
First published
04 Feb 2025

J. Mater. Chem. C, 2025,13, 3669-3688

III–V semiconductor wires for optical switches in solid-state lasers

L. Qiu, Y. Zhao, J. Jiang, F. Lou, S. Zhang, H. Yang, B. Zhang, X. Wang and J. He, J. Mater. Chem. C, 2025, 13, 3669 DOI: 10.1039/D4TC04975F

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