Hui Zhanga,
Xuguang Xub,
Wei Lib,
Gang Mub,
Fu-Qiang Huang*ac and
Xiao-Ming Xieb
aCAS Key Laboratory of Materials for Energy Conversion, State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, P. R. China. E-mail: huangfq@mail.sic.ac.cn; Tel: +86-21-52411620
bState Key Laboratory of Functional Materials for Informatics and Shanghai Center for Superconductivity, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
cBeijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
First published on 9th June 2015
Type-I clathrates of K7.69(2)Cu2.94(6)Ge43.06(6) and Rb8Ag2.79(4)Ge43.21(4) are synthesized directly from the corresponding elements. The structures are resolved by powder XRD data by means of a least-squares technique using WinCSD program. The refined lattice parameters are a = 10.70783(3) Å and a = 10.84493(3) Å for K7.69(2)Cu2.94(6)Ge43.06(6) and Rb8Ag2.79(4)Ge43.21(4), respectively. The electronic band structure and density of states indicate K8Cu3Ge43 and Rb8Ag3Ge43 are p-type semiconductors with narrow indirect band gaps of 0.33 and 0.24 eV. In addition, K7.69(2)Cu2.94(6)Ge43.06(6) displays a diamagnetism with χ = −1.102(1) × 10−3 emu mol−1 in the field of 7 T at 400 K and has a strong Einstein model with θE = 56.3(1) K and θD = 297(3) K.
The Zintl–Klemm rule offers an explanation for the formation of electronically-balanced clathrates with partial substitutions on the framework and guest atom sites.3,6 The recent growing interest in clathrates of tetrels (elements of group 14) in which the host framework is based on Si, Ge, or Sn atoms is motivated in particular by the search for a new generation of efficient thermoelectric materials.12 The most anionic 14 group element M (M = Si/Ge/Sn) based type-I clathrates with alkaline metal A (A = Na, K, Rb, Cs) in the cages are built with 13 group elements T (T = B, Al, Ga, In): such as Ge based clathrates K7B7Ge39,3 K8Al8Ge38,13 K8Al23.3Ge22.7,14 K8Ga23Ge23,14,15 K8In6Ge40,16 K8In8.14Ge37.86,17 K8In16Ge30,15 Rb8Al7.84Ge38.16,18 Rb8Ga8Ge38,19 Rb8In7.81Ge38.19,17 etc. There are only a few transition metal clathrates: e.g. K8Hg3.19Ge42.81,20 Rb8Hg3.03Ge42.97,20 and (Rb, K)8−xAuyGe46−y.21 We found alkaline earth metal and transition metal clathrate of Ba8Au5.3Ge43.7 has good thermoelectric properties with ZT = 0.3–0.9.22 It is worth to explore alkali metal and transition metal clathrates for potential thermoelectric applications.
Herein the synthesis and structure of K7.69(2)Cu2.94(6)Ge43.06(6) and Rb8Ag2.79(4)Ge43.21(4) are investigated. The magnetic properties and heat capacity of K7.69(2)Cu2.94(6)Ge43.06(6) are also presented.
The systematic absences are same (hhl: 2h + l = 2n and h00: h = 2n) for Pmn (223) and P
3n (218) space groups. Transition metal with a low amount of substitution in type-I clathrates20–22 usually locate at 6c site like most anionic type-I clathrates with group 13 elements (B/Al/Ga/In) in Pm
n space group.1–3,13–19 Only a few cationic type-I clathrates Ge38P8I8,24 Ge38As8I8,24 Ge38Te16,25 etc. crystallize in P
3n (218) space group in which double 8e sites replace 16i site in Pm
n. For K7.69(2)Cu2.94(6)Ge43.06(6) and Rb8Ag2.79(4)Ge43.21(4) with low amount of Cu and Ag substitution for Ge we choose cubic Pm
n (223) space group.
During the initial steps of the refinement, all framework atoms are treated as Ge, and the guest atoms at 2a sites (K1/Rb1) and 6d sites (K2/Rb2) in cubic Pmn (223) space group. Subsequent refinement sets Cu1/Ag1 at 6c position with Ge1 atoms. The isotropic atomic displacement parameters for K2 are large. Further refinement allowed the site position of K2 shift from 6d sites (1/4, 0, 1/2) to 24k sites (x, 0, y) and the refined occupancy is 0.237(1). The K vacancy is common in K content clathrates K6.71Au2.21Ge43.79.21 For Rb2 neither split model nor partial occupancy reduces the displacement parameters. The refined XRD patterns for K7.69(2)Cu2.94(6)Ge43.06(6) and Rb8Ag2.83(2)Ge43.17(2) with R = 5.78% and R = 5.36% are given in Fig. 1. The final atomic coordinates, site occupancies, isotropic atomic displacement parameters and R factors for K7.69(2)Cu2.94(6)Ge43.06(6) and Rb8Ag2.79(4)Ge43.21(4) are listed in Table 1. The important interatomic distances of K7.69(2)Cu2.94(6)Ge43.06(6) and Rb8Ag2.79(4)Ge43.21(4) are given in Table 2. For the large Rb and Ag atoms in Rb8Ag2.79(4)Ge43.21(4) the Ag/Ge–Ge and Rb–Ge distances are longer than Cu/Ge–Ge and K–Ge distances in K7.69(2)Cu2.94(6)Ge43.06(6).
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Fig. 1 Refined XRD patterns of K7.69(2)Cu2.94(6)Ge43.06(6) (top) and Rb8Ag2.79(4)Ge43.21(4) (bottom). |
Label | Sites | x | y | z | Biso/Bequ | Occ. |
---|---|---|---|---|---|---|
K7.69(2)Cu2.94(6)Ge43.06(6), a = 10.70783(3) Å, R = 5.78% | ||||||
K1 | 2a | 0 | 0 | 0 | 0.277(2) | 1 |
K2 | 24k | 0.2598(6) | 0.4723(4) | 0 | 0.341(2) | 0.237(1) |
Ge1/Cu1 | 6c | 1/4 | 0 | 1/2 | 1.330(2) | 0.51(1)/0.49 |
Ge2 | 16i | 0.18308(4) | x | x | 0.933(2) | 1 |
Ge3 | 24k | 0 | 0.31124(5) | 0.11862(5) | 0.956(2) | 1 |
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Rb8Ag2.79(4)Ge43.21(4), a = 10.84493(3) Å, R = 5.36% | ||||||
Rb1 | 2a | 0 | 0 | 0 | 1.105(2) | 1 |
Rb2 | 6d | 1/4 | 1/2 | 0 | 2.142(2) | 1 |
Ge1/Ag1 | 6c | 1/4 | 0 | 1/2 | 1.495(2) | 0.535(6)/0.465 |
Ge2 | 16i | 0.18323(5) | x | x | 0.984(2) | 1 |
Ge3 | 24k | 0 | 0.30716(6) | 0.11855(6) | 0.876(2) | 1 |
K7.69(2)Cu2.94(6)Ge43.06(6) | |||||
K1–8Ge2 | 3.3955(5) | K2–2Ge1 | 3.872(5) | Ge3–2Ge2 | 2.4906(6) |
K1–12Ge3 | 3.5667(6) | K2–1Ge1 | 3.931(5) | Ge3–1Ge3 | 2.5404(8) |
K2–2Ge3 | 3.413(5) | K2–2Ge2 | 4.121(2) | Ge3–Ge1–Ge3 | 109.05(2) |
K2–1Ge1 | 3.504(5) | K2–2Ge3 | 4.165(1) | Ge3–Ge1–Ge3 | 110.32(2) |
K2–2Ge3 | 3.511(5) | K2–2Ge2 | 4.258(4) | Ge3–Ge2–Ge2 | 107.24(3) |
K2–2Ge3 | 3.627(5) | K2–1Ge3 | 4.414(4) | Ge3–Ge2–Ge3 | 111.61(3) |
K2–2Ge2 | 3.757(4) | Ge1–4Ge3 | 2.4625(6) | Ge2–Ge3–Ge2 | 103.83(3) |
K2–1Ge3 | 3.827(4) | Ge2–1Ge2 | 2.4822(7) | Ge1–Ge3–Ge2 | 107.10(2) |
K2–2Ge2 | 3.829(2) | Ge2–3Ge3 | 2.4906(6) | Ge2–Ge3–Ge3 | 106.09(3) |
K2–2Ge3 | 3.837(5) | Ge3–1Ge1 | 2.4625(6) | Ge1–Ge3–Ge3 | 124.84(3) |
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Rb8Ag2.79(4)Ge43.21 | |||||
Rb1–8Ge2 | 3.4417(6) | Ge2–1Ge2 | 2.5086(8) | Ge3–Ge2–Ge2 | 108.09(3) |
Rb1–12Ge3 | 3.5705(7) | Ge2–3Ge3 | 2.4993(7) | Ge3–Ge2–Ge3 | 110.81(3) |
Rb2–8Ge3 | 3.6576(5) | Ge3–1Ge1 | 2.5311(7) | Ge2–Ge3–Ge2 | 105.32(3) |
Rb2–4Ge1 | 3.8343(1) | Ge3–2Ge2 | 2.4993(7) | Ge1–Ge3–Ge2 | 106.63(3) |
Rb2–8Ge2 | 4.0342(1) | Ge3–1Ge3 | 2.571(1) | Ge2–Ge3–Ge3 | 106.30(3) |
Rb2–4Ge3 | 4.1830(7) | Ge3–Ge1–Ge3 | 108.50(2) | Ge1–Ge3–Ge3 | 124.28(3) |
Ge1–4Ge3 | 2.5311(7) | Ge3–Ge1–Ge3 | 111.44(2) |
The crystal structure of Rb8Ag2.79(4)Ge43.21(4) is shown in Fig. 2. Pink Rb1 lies in 2a, and violet Rb2 at 6d sites. Brown Ag1/Ge1 at 6c sites, cyan Ge2 at 16i and blue Ge3 at 24k sites form the fused the violet perpendicular tetrakaidecahedra double chains in the middle of a couple of opposite edges of three directions in the cubic lattice. The yellow pentagonal dodecahedra formed by Ge2 and Ge3 fill the rest vacancies of the corners and body center of the cubic lattice. For K7.69(2)Cu2.94(6)Ge43.06(6) the only difference lies in the K2 split from the center of 6d sites to 24k sites with 23.7(1)% occupancy. For simple we give only Rb8Ag2.79(4)Ge43.21(4) structure.
In order to prove if K7.69(2)Cu2.94(6)Ge43.06(6) and Rb8Ag2.79(4)Ge43.21(4) are semiconductors, theoretical calculations are performed using VASP on ordered K8Cu3Ge43 and Rb8Ag3Ge43 models. Calculated band structure and high-symmetry axes of the Brillouin zone for K8Cu3Ge43 and Rb8Ag3Ge43 are shown in Fig. 3. The abscissa of Fig. 3 means the high symmetry directions in Brillouin zone paths (Γ(0, 0, 0) → X(1/2, 0, 0) → M(1/2, 1/2, 0) → Γ(0, 0, 0) → R(1/2, 1/2, 1/2)) of the reciprocal lattice. The dashed line corresponds to Fermi energy level. The other multi coloured lines of the figure are electronic energy levels of different bands. The coloured lines are electronic energy bands, which are occupied by electrons below Fermi energy level and are empty above Fermi level. The highest occupied orbit locates at M(1/2, 1/2, 1) direction and the lowest empty orbit lies at X(1/2, 0, 0). The band structure displays a characterized by semiconductor feature with an in indirect band gap of 0.33 and 0.24 eV, respectively. The calculated total and partial density of states are presented in Fig. 4. The major features can be summarized as follows. The upper VB is mainly derived from Ge 4p at the high energy side with partially hybridized Cu d/Ag d states, while the lower CB is mainly derived from Ge 4p at low energy side.
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Fig. 3 The energy band structure of (top) K8Cu3Ge43 and (bottom) Rb8Ag3Ge43 displaying an indirect p-type semiconductor with energy band gap of 0.33 and 0.24 eV, respectively. |
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Fig. 4 Total and partial density of states of Cu d, Ag d, Ge p states for (a) K8Cu3Ge43 and (b) Rb8Ag3Ge43. |
The magnetic susceptibility χ versus temperature of K7.69(2)Cu2.94(6)Ge43.06(6) reveals diamagnetic behavior. The susceptibility is −1.102(1) × 10−3 emu mol−1 in the field of 7 T at 400 K (Fig. 5). Heat capacity can be described by the sum of three contributions: the electronic contribution Ce = γT, and the lattice contributions Cl from both the rigid cage forming network and the guest atoms within the cages. The latter two contributions may be described by a Debye term and an Einstein term, respectively. The existence of a low energy Einstein contribution is often motivated by the presence of a maximum in the representation Cl/T3 = (Cp − γT)/T3 which basically illustrates the deviations from the Debye T3 law valid in the low T limit. Resorting to the standard description of specific heat, the data can be expressed as Cp = γT + βT3. Heat capacity of K7.69(2)Cu2.94(6)Ge43.06(6) plotted as Cp/T3 versus temperature is shown in Fig. 6 and inset of it is plotted as Cp/T versus T2 with the fitted line. Fig. 6 demonstrates that also for K7.69(2)Cu2.94(6)Ge43.06(6) such a maximum at about T = 20 K. The resulting parameters for K7.69(2)Cu2.94(6)Ge43.06(6) from a fit of the data with 1.8 K < T < 3.1 K are γ = 26.6(3) mJ mol−1 K−2 and β = 4.00(4) mJ mol−1 K−4. The fitted Debye temperature ΘD ≈ 297(3) K and Einstein temperature ΘE ≈ 56.3(1) K are obtained.
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Fig. 6 Heat capacity of K7.69(2)Cu2.94(6)Ge43.06(6), plotted as Cp/T3 versus temperature, inset of it is plotted as Cp/T versus T2 with the fitted curve. |
Footnote |
† CCDC 1401202 and 1401203. For crystallographic data in CIF or other electronic format see DOI: 10.1039/c5ra09382a |
This journal is © The Royal Society of Chemistry 2015 |