Origin of arbitrary patterns by direct laser writing in a telluride thin film

Abstract

A crystalline telluride (Te) thin film was prepared by a radio frequency magnetron controlling sputtering method. The fabrication of arbitrary patterns was achieved successfully by our home-built direct laser writing system in the prepared Te thin film. To elucidate the mechanism of pattern formation, micro X-ray diffraction, micro Raman spectra and micro reflective spectra before and after exposure were analyzed in detail. The results reveal that the occurrence of arbitrary patterns may be ascribed to the decreased grain size in the Te thin film, which can further be confirmed by the results of AFM and section images of the Te thin film. It is a simple and cost-effective method for arbitrary pattern fabrication based on the reduction of grain size in the laser writing process.