Issue 69, 2016, Issue in Progress
From the journal:

RSC Advances

Enhanced performance of perovskite solar cells with solution-processed n-doping of the PCBM interlayer†

Jun-Ho Bae,a   Yong-Jin Noh,a   Minji Kang,b   Dong-Yu Kim,b   Hyun-Bin Kim,c   Seung-Hwan Oh,c   Jin-Mun Yun*c  and  Seok-In Na*a  

* Corresponding authors

a Professional Graduate School of Flexible and Printable Electronics and Polymer Materials Fusion Research Center, Chonbuk National University, Deokjin-dong 664-14, Jeonju-si, Jeollabuk-do 561-756, Republic of Korea
E-mail: nsi12@jbnu.ac.kr

b School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Republic of Korea

c Radiation Research Division for Industry & Environment, Korea Atomic Energy Research Institute (KAERI), Geumgu-gil 29, Jeongeup, Jeollabuk-do 580-185, Republic of Korea
E-mail: yjm90@kaeri.re.kr

Abstract

Here, we report a facile and efficient sequential n-doping method to increase the device performance of planar-type organic/inorganic perovskite solar cells. Compared to the pristine PCBM-based electron transport layer (ETL), power conversion efficiencies of cells with a doped ETL are dramatically enhanced up to 12.53%.

Graphical abstract: Enhanced performance of perovskite solar cells with solution-processed n-doping of the PCBM interlayer

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Article information

DOI
https://doi.org/10.1039/C6RA13082H
Article type
Communication
Submitted
19 May 2016
Accepted
04 Jul 2016
First published
04 Jul 2016

RSC Adv., 2016,6, 64962-64966

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Enhanced performance of perovskite solar cells with solution-processed n-doping of the PCBM interlayer

J. Bae, Y. Noh, M. Kang, D. Kim, H. Kim, S. Oh, J. Yun and S. Na, RSC Adv., 2016, 6, 64962 DOI: 10.1039/C6RA13082H

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