Open Access Article
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Correction: A vertical WSe2–MoSe2 p–n heterostructure with tunable gate rectification
Hailiang Liuab,
Sajjad Hussainab,
Asif Aliab,
Bilal Abbas Naqviab,
Dhanasekaran Vikramanc,
Woonyoung Jeongab,
Wooseok Songd,
Ki-Seok And and
Jongwan Jung*ab
aGraphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea. E-mail: jwjung@sejong.ac.kr
bInstitute of Nano and Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea
cDivision of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Republic of Korea
dThin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejon 305-600, Korea
First published on 13th August 2018
Abstract
Correction for ‘A vertical WSe2–MoSe2 p–n heterostructure with tunable gate rectification’ by Hailing Liu et al., RSC Adv., 2018, 8, 25514–25518.
The authors regret that Hailiang Liu’s name was spelled incorrectly in the original article; the corrected version is shown above.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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