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Correction: Integration of BiFeO3/La0.7Sr0.3MnO3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors
Md. Shafiqur
Rahman
*a,
Susmita
Ghose
a,
Liang
Hong
b,
Pradip
Dhungana
c,
Abbas
Fahami
a,
Javad R.
Gatabi
a,
Juan S.
Rojas-Ramirez
d,
Alex
Zakhidov
ac,
Robert F.
Klie
b,
R. K.
Pandey
d and
Ravi
Droopad
d
aMaterial Science, Engineering and Commercialization, Texas State University, San Marcos, TX 78666, USA. E-mail: m_r424@txstate.edu
bDepartment of Physics, University of Illinois at Chicago, Chicago, IL 60607, USA
cDepartment of Physics, Texas State University, San Marcos, TX 78666, USA
dIngram School of Engineering, Texas State University, San Marcos, TX 78666, USA
First published on 30th July 2018
Abstract
Correction for ‘Integration of BiFeO3/La0.7Sr0.3MnO3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors’ by Md. Shafiqur Rahman et al., J. Mater. Chem. C, 2016, 4, 10386–10394.
The authors regret the omission of an Acknowledgements section from their original article. The missing acknowledgements section is shown below.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
Acknowledgements
L. H. and R. F. K. acknowledge support from the National Science Foundation (Grant No. DMR-1408427) for the electron microscopy work at the University of Illinois – Chicago.| This journal is © The Royal Society of Chemistry 2018 |