Perovskite-related (CH3NH3)3Sb2Br9 for forming-free memristor and low-energy-consuming neuromorphic computing

Abstract

Organic–inorganic halide perovskite materials exhibit excellent memristive properties, such as a high on/off ratio and low switching voltage. However, most studies have focused on Pb-based perovskites. Here, we report on the resistive switching and neuromorphic computing properties of Pb-free perovskite-related MA₃Sb₂Br₉ (MA = CH₃NH₃). The Ag/PMMA/MA₃Sb₂Br₉/ITO devices show forming-free characteristics due to a self-formed conducting filament induced by metallic Sb present in the as-prepared MA₃Sb₂Br₉ layer. An MA₃Sb₂Br₉-based memristor exhibits a reliable on/off ratio (∼10²), an endurance of 300 cycles, a retention time of ∼10⁴ s and multilevel storage characteristics. Furthermore, synaptic characteristics, such as short-term potentiation, short-term depression and long-term potentiation, are revealed along with a low energy-consumption of 117.9 fJ μm⁻², which indicates that MA₃Sb₂Br₉ is a promising material for neuromorphic computing.