Issue 8, 2019

Layer-by-layer growth in solution deposition of monocrystalline lead sulfide thin films on GaAs(111)

Abstract

We report layer-by-layer growth of single crystal PbS films with unprecedented quality using chemical solution deposition, on par with much more sophisticated growth techniques. Ex situ transmission electron microscopy and in-house X-ray diffraction established the monocrystalline nature of the films and the atomically smooth film surface. High brilliance synchrotron X-rays were employed in grazing incidence geometry for in situ monitoring the formation of a gallium sulfide interfacial layer, and for establishing layer-by-layer growth of the subsequent PbS film. Our findings show that by maintaining a large reservoir of free sulfide ions, layer-by-layer growth is maintained by reducing the interfacial surface free energy.

Graphical abstract: Layer-by-layer growth in solution deposition of monocrystalline lead sulfide thin films on GaAs(111)

Supplementary files

Article information

Article type
Research Article
Submitted
15 Mar 2019
Accepted
17 May 2019
First published
20 May 2019

Mater. Chem. Front., 2019,3, 1538-1544

Layer-by-layer growth in solution deposition of monocrystalline lead sulfide thin films on GaAs(111)

T. Templeman, M. Perez, O. Friedman, R. E. Abutbul, M. Shandalov, V. Ezersky, O. Konovalov and Y. Golan, Mater. Chem. Front., 2019, 3, 1538 DOI: 10.1039/C9QM00155G

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