Itaru
Raifuku
a,
Yu-Hsien
Chiang
a,
Cheng-Hung
Hou
b,
Ming-Hsien
Li
ac,
Chen-Fu
Lin
a,
Pei-Ying
Lin
a,
Jing-Jong
Shyue
b and
Peter
Chen
*ad
aDepartment of Photonics, National Cheng Kung University, No. 1, University Rd, Tainan 70101, Taiwan. E-mail: petercyc@ncku.edu.tw
bResearch Center for Applied Science, Academia Sinica, 128 Academia Rd, Sec. 2, Nankang, Taipei 115, Taiwan
cDepartment of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, Daxue Rd, Nantou 54561, Taiwan
dHierachical Green-Energy Materials (Hi-GEM) Research Center, National Cheng Kung University, No. 1, University Rd, Tainan 70101, Taiwan
First published on 9th March 2021
Perovskite solar cells (PSCs) employing organic–inorganic hybrid lead perovskite have attracted much attention as promising next generation solar cells because of their low fabrication cost and extremely high power conversion efficiency (PCE). Exploring new perovskite materials and additives is one of the effective strategies to improve the performance of PSCs. Here, we synthesized formamide iodide (FoAI) and applied it as both a cation material and additive. Although it was revealed that FoAI is not incorporated in the A-site of the perovskite structure, we found that the FoAI additive suppresses δ-FAPbI3 formation and improved the performance of FAPbI3 based PSCs. The PCE was improved from 12.29% to 14.49% by adding 5 mol% of FoAI in the precursor solution. Meanwhile, we found that FoAI additive can also improve the performance of triple-cation PSCs. We believe that FoAI is one of the promising additives to boost the PCE of PSCs without any influence on the composition of the perovskite materials.
Numerous strategies have been demonstrated to achieve high PCE PSCs such as solvent engineering, additive engineering, and interface modification.14–18 One of the effective strategies is modifying the composition of perovskite compounds. In the early stage of investigations, methylammonium lead iodide (MAPbI3) was mainly used as the light absorber. A few years later, many researchers shifted to investigating mixed-cation perovskites such as FAMAPbX3, or CsFAMAPbX3 (where FA is formamidinium).19,20 Mixed-cation perovskites have successfully shown better PCE and stability than conventional PSCs employing mono-cation perovskites. Currently, mono-cation FAPbI3 has been the focus of halide perovskites again owing to its optimal bandgap for single junction solar cells. In the early investigations of FAPbI3 PSCs, researchers suffered from poor efficiency and stability due to the formation of δ-FAPbI3, which is a non-photoactive phase of FAPbI3.21 Nowadays, phase pure α-FAPbI3 films have been achieved by several strategies such as using pre-synthesized FAPbI3 powder as a precursor22 or adding additives in the precursor solution.23 To the best of our knowledge, the highest PCE of 25.17% was achieved with FAPbI3 employing a little amount of methylenediammonium dichloride and CsI as the additive.3
Cation also affects the structure of perovskite compounds. Small cations such as MA, FA, Cs and these mixtures form 3D structured perovskite. Meanwhile, large cations such as phenethylammonium or butylammonium form 2D structured perovskite. 2D structured perovskite compounds show quite different characteristics such as stability and optical properties from 3D structured ones.24
As mentioned above, cation materials affect the characteristics of perovskite compounds. Therefore, exploring novel cation materials is an important work for further development of perovskite optoelectronics devices. Here, we have synthesized formamide iodide (FoAI) and investigated the potential of FoAI as a cation material for PSCs. It was revealed that FoAI itself has very limited inclusion in the 3D perovskite and does not change the perovskite structure from time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray diffraction (XRD) patterns and Fourier transform infrared (FT-IR) spectroscopy. However, we found that FoAI suppresses the formation of δ-FAPbI3 when it is applied as an additive for FAPbI3 perovskite. Moreover, it was revealed that FoAI improves the photovoltaic performance of PSCs for both pure FAPbI3 and mixed-cation perovskite compounds. Based on experimental results, we believe that FoAI is one of the promising additives to boost the PCE of PSCs without influence on the composition of perovskite materials.
Fig. 1 Molecular structure of (a) formamide iodide (FoAI) and (b) formamidinium iodide (FAI). (c) FT-IR spectra of FoAI and FAI. |
Then, we investigated whether FoA could be inserted in the A-site of perovskite compounds with a system of FA1−xFoAxPbI3. Fig. 2(a) shows photographs of FA1−xFoAxPbI3 films prepared under various stoichiometries. The x = 0, FAPbI3 film showed black color and it was confirmed that the film mainly consists of α-FAPbI3 with the presence of δ phase from XRD patterns as shown in Fig. 2(b). By contrast, the x = 1, FoAPbI3 film showed bright yellow color which is similar to PbI2 films. The XRD patterns of FoAPbI3 films revealed that the film is mainly composed of PbI2. FT-IR spectroscopy was carried out to confirm whether FoA is present in the resulting films or not. Fig. 2(c) shows FT-IR spectra of each composition film. Films containing less FoA showed clear signals arising from N–H stretching and CN stretching in the spectra. By contrast, films containing a large amount of FoA did not show any signals in their spectra. Results from XRD and FT-IR measurements indicate that FoA does not form perovskite.
We found that a solution including FoAI and PbI2 does not form a precipitate even if chlorobenzene, which is an anti-solvent, is added in the solution. On the other hand, the pure PbI2 solution immediately forms a precipitate as shown in Fig. S4 (ESI†). This phenomenon indicates that there is a possibility that FoAI forms an adduct or complex with PbI2 and thus, improves the solubility of PbI2. Then, we applied FoAI as an additive for PSCs employing FAPbI3 and mixed-cation perovskite as the light absorber.
Fig. 3(a) shows J–V curves of PSCs employing FAPbI3 with and without FoAI as an additive in the precursor solution. The FoAI added sample showed higher PCE particularly with improved short-circuit current density (JSC) compared to the control devices. Fig. 3(b) and (c) show external quantum efficiency (EQE) spectra of PSCs and absorbance spectra of perovskite films, respectively. The FoAI added device showed an entirely higher EQE value than the control device even though there is almost no change in the absorbance spectra of perovskite films. The band positions of FAPbI3 films with and without FoAI additive were evaluated with the Kelvin probe method and APS measurements. Fig. S5(a) (ESI†) shows the difference of the surface potential of both films against a reference tip. Fig. S5(b) (ESI†) shows photoemission spectra of both films obtained by APS measurement. There were no obvious changes in surface potential and photoemission spectra, indicating that both perovskite films have same work function and ionization potential. Also, both films showed the same absorption edge as shown in Fig. 3(c). From these results, we assume that the FoAI additive does not affect the band position of FAPbI3 films. Fig. 3(d) shows the XRD patterns of the FAPbI3 films with and without FoAI additive. The FAPbI3 film which does not include FoAI additive showed a diffraction peak originated from δ-FAPbI3, which is not a photoactive phase for solar cells. On the other hand, FoAI added films did not show diffraction peaks from δ-FAPbI3. This result indicates that the FoAI additive suppresses the formation of δ-FAPbI3.
Fig. S6 (ESI†) shows PL spectra of pure FAPbI3 and FoAI added FAPbI3 films. Both films show a PL peak at around 800 nm, which is consistent with the absorption edge of the films. Fig. S7 (ESI†) shows SEM images of pure FAPbI3 and FoAI added FAPbI3 films. There was almost no change in the morphology of FAPbI3 films by adding FoAI.
Fig. S8 (ESI†) shows dark I–V curves of electron only devices employing pure and FoAI added FAPbI3 films. The device structure is FTO/TiO2/SnO2/perovskite/PCBM/Ag. The current versus bias behavior can be divided into three different regions, ohmic region, trap filling region, and space charge limited current region. The voltage where the behavior changes from ohmic to trap filling is called the trap-filled limit voltage (VTFL). The relationship between VTFL and trap density (Nt) can be described as follows; Nt = 2ε0εVTFL/eL2, where ε0 is the vacuum permittivity, ε is the relative dielectric constant of perovskite film, e is the electron charge, and L is the film thickness.29 Comparing the dark I–V curves, we found that the FoAI added sample showed slightly lower VTFL indicating that FoAI added films have less defects than pure FAPbI3 films.
Hysteresis index, defined as (PCEreverse – PCEforward)/PCEreverse, of FAPbI3 PSCs was calculated and summarized in Table S3 (ESI†).30 There was no significant difference in hysteresis index of FAPbI3 PSCs with and without FoAI additive.
We have also investigated the effect of FoAI on the stability of FAPbI3 PSCs. Fig. S9 (ESI†) shows the normalized PCE of FAPbI3 PSCs kept at a maximum power point under continuous 1 sun irradiation without encapsulation. After 90 min irradiation, the PCE of pure FAPbI3 PSCs decreased to 42.7% of the initial value. By contrast, FoAI added PSCs kept a slightly higher value of 49.3%. This result indicates that FoAI might also improve the stability of FAPbI3 PSCs under working conditions.
The J–V characteristics of PSCs are summarized in Table 1. The PCE of our control sample (12.29%) seems to be low considering the record efficiency (>25%) of PSCs. However, it is comparable to the baseline of pure FAPbI3 devices whose PCE is around 13–17%.31–33 We believe that our method offers an alternative strategy to stabilize and improve the performance of pure FAPbI3 based devices.
J SC (mA cm−2) | V OC (V) | FF | PCE (%) | |
---|---|---|---|---|
Control | 16.86 ± 0.53 | 0.964 ± 0.023 | 0.649 ± 0.036 | 10.71 ± 1.10 |
(Forward) | (17.31) | (0.979) | (0.668) | (11.47) |
Control | 17.17 ± 0.48 | 0.977 ± 0.007 | 0.687 ± 0.016 | 11.67 ± 0.63 |
(Reverse) | (17.55) | (0.983) | (0.704) | (12.29) |
With FoAI | 18.98 ± 0.92 | 1.000 ± 0.005 | 0.685 ± 0.010 | 13.16 ± 0.84 |
(Forward) | (19.63) | (1.007) | (0.696) | (13.93) |
With FoAI | 19.05 ± 0.75 | 1.005 ± 0.008 | 0.717 ± 0.010 | 13.90 ± 0.54 |
(Reverse) | (19.59) | (1.014) | (0.721) | (14.49) |
Then, we applied FoAI additive in multi-cation PSCs, which are the baseline of high performing perovskite cells in general. Fig. 4(a) shows J–V curves of triple-cation PSCs with and without FoAI additives. EQE spectra of each sample are shown in Fig. S10 (ESI†). The VOC was slightly improved by adding FoAI in the precursor solution. Fig. 4(b) shows PL spectra of triple-cation perovskite films with and without FoAI additives. Perovskite films containing 0.625 and 1.25 mol% of FoAI showed stronger PL intensity than the control films, indicating that FoAI helps the formation of less defect perovskite films and resulted in improved VOC. There were no obvious changes in absorbance spectra, XRD patterns, and morphology as shown in Fig. S11 and S12 (ESI†). Dark I–V characteristics of the electron only device employing triple-cation perovskite films are shown in Fig. S13 (ESI†). In contrast to FAPbI3 films, there was no significant difference in VTFL of both triple-cation perovskite films. The J–V characteristics of triple-cation PSCs with and without FoAI additives are summarized in Table 2. The hysteresis index of triple-cation PSCs was calculated and summarized in Table S4 (ESI†). There was no significant difference in hysteresis index by FoAI concentration.
FoAI (mol%) | J SC (mA cm−2) | V OC (V) | FF | PCE (%) |
---|---|---|---|---|
0 | 21.30 ± 0.17 | 1.065 ± 0.004 | 0.765 ± 0.008 | 17.36 ± 0.22 |
0.625 | 21.28 ± 0.09 | 1.077 ± 0.006 | 0.767 ± 0.005 | 17.58 ± 0.10 |
1.25 | 21.28 ± 0.02 | 1.082 ± 0.006 | 0.757 ± 0.005 | 17.41 ± 0.12 |
2.5 | 21.30 ± 0.08 | 1.077 ± 0.003 | 0.754 ± 0.005 | 17.30 ± 0.18 |
5 | 21.25 ± 0.16 | 1.073 ± 0.010 | 0.756 ± 0.006 | 17.24 ± 0.17 |
Fig. S14 (ESI†) shows FT-IR spectra of FoAI added triple-cation perovskite films. Although signals originated from N–H, C–N, and CN bonding of MAI and FAI were observed, there was no clear signal at around 1400 cm−1, where characteristic peaks were observed in the spectrum of FoAI (Fig. 1). This result also indicates that FoA is not included as an A-site cation of a perovskite structure.
We further investigated whether FoAI is included in the final perovskite films with ToF-SIMS which has a higher detection limit than FT-IR measurements. Fig. S15 (ESI†) shows the ToF-SIMS profile (positive ion) of pure FAPbI3 and FoAI added films. It is difficult to conclude whether the FoA ion is included in the final films from positive ion mode because the FA ion and FoA ion have a similar m/z value (FA: m/z = 45, FoA: m/z = 46). Actually, the pure FAPbI3 film showed a signal of m/z = 46, which might result from isotopic atoms contained in FA ions. Then, we checked negative ions included in FoAI added FAPbI3 films. Fig. S16 (ESI†) shows I and O ion distribution in FoAI added films. O ions were not detected in the perovskite films, indicating that FoAI is not included in the final films. We also could not detect the O ion in FoAI added triple cation perovskite films as shown in Fig. S17 (ESI†).
From inhibited δ-FAPbI3 formation (Fig. 3(d)) and enhanced PL intensity of perovskite films (Fig. 4(b)), there is a possibility that FoAI affects the crystal growth of perovskite films. It is also observed in the XRD patterns of the perovskite films (Fig. 3(d) and Fig. S11(b), ESI†) that the FoAI added films showed stronger intensity than the pure perovskite films. This result also indicates that FoAI affects the crystal growth of perovskite films. One of the possible mechanisms is that FoAI forms adduct with PbI2 as mentioned above. It is known that adduct formation leads to highly efficient PSCs.34,35 Furthermore, it is reported that idodide defects in perovskite films affect the device performance of PSCs.36 There is a possibility that iodide from FoAI reduces the defects and improves the efficiency of PSCs. Although further investigation is necessary to clarify the detailed role of FoAI, we believe that FoAI is one of the promising materials to boost the PCE of PSCs.
Footnote |
† Electronic supplementary information (ESI) available. See DOI: 10.1039/d0ma00945h |
This journal is © The Royal Society of Chemistry 2021 |