Atiek Rostika Noviyanti*a,
Juliandria,
Suci Winarsihb,
Dani Gustaman Syarifc,
Yoga Trianzar Malika,
Rifki Septawendard and
Risdianab
aDepartment of Chemistry, Faculty of Mathematics and Natural Sciences, Universitas Padjadjaran, Jl. Raya Bandung-Sumedang km 21 Jatinangor, Sumedang, West Jawa 45363, Indonesia. E-mail: atiek.noviyanti@unpad.ac.id
bDepartment of Physics, Faculty of Mathematics and Natural Sciences, Universitas Padjadjaran, Jl. Raya Bandung-Sumedang km 21 Jatinangor, Sumedang, West Jawa 45363, Indonesia
cPRTNT-ORTN-BRIN, Jl. Taman Sari 71, Bandung 40132, Indonesia
dLaboratory of Advanced Ceramics, Glass, and Enamel, Center for Ceramics, Ministry of Industry of Indonesia, Indonesia
First published on 30th November 2021
Solid oxide fuel cells (SOFCs) are one of the most promising clean energy sources to be developed. However, the operating temperature of SOFCs is currently still very high, ranging between 1073 and 1273 K. Reducing the operating temperature of SOFCs to intermediate temperatures in between 773 and 1073 K without decreasing the conductivity value is a challenging research topic and has received much attention from researchers. The electrolyte is one of the components in SOFCs which has an important role in reducing the operating temperature of the SOFC compared to the other two fuel cell components, namely the anode and cathode. Therefore, an electrolyte that has high conductivity at moderate operating temperature is needed to obtain SOFC with medium operating temperature as well. La9.33Si6O26 (LSO) is a potential electrolyte that has high conductivity at moderate operating temperatures when this material is modified by doping with metal ions. Here, we report a modification of the structure of the LSO by partial substitution of La with Bi3+ ions and Si with Sn4+, which forms La9.33−xBixSi6−ySnyO26 with x = 0.5, 1.0, 1.5, and y = 0.1, 0.3, 0.5, in order to obtain an electrolyte of LSO with high conductivity at moderate operating temperatures. The addition of Bi and Sn as dopants has increased the conductivity of the LSO. Our work indicated highly enhanced electrical properties of La7.83Bi1.5Si5.7Sn0.3O26 at 873 K (1.84 × 10−2 S cm−1) with considerably low activation energy (Ea) of 0.80 eV comparing to pristine La9.33Si6O26 (0.08 × 10−2 S cm−1).
General SOFCs typically operate at high temperatures in the range between 1073 K and 1273 K,1 which causes accelerated aging and damaging their components. Therefore, lowering the operating temperature is an important issue that must be developed in SOFC. In addition, lowering its working temperature is also necessary to eliminate power loss during operation. However, a decrease in operating temperature usually causes a decrease in SOFC performance. To resolve these problems, the use of high conductivity electrolytes is a very determining factor and must be considered when manufacturing SOFC. High conductivity electrolytes are usually obtained from new types of electrolytes, or modifications to existing electrolytes. However, finding new types of electrolytes is more difficult than modifying existing electrolytes. The usual modification by defect formation in crystals can be done by doping and forming composite. Electrolyte modification usually also correlates with other improvements in physical properties such as reduced brittleness and obtained high-density electrolytes with lower sintering temperature. The electrolyte from apatite type is an alternative electrolyte to overcome this problem2 because of the large conduction tunnel in apatite lattice structure, facilitating the circulation of free oxide ions3 which allows the increased conductivity of the electrolyte. LSO with a hexagonal crystal structure with three possible space clusters namely P, P63 and P63/m was first discovered by Nakayama et al.4 The electrolytes of the LSO generally exhibit insufficient conductivity at lower operating temperatures below 973 K. However, the open structure of the LSO allows modification by the doping technique on the La and Si site which makes it possible to obtain sufficient conductivity values at low-temperature operation.5 Several studies reported that by adding dopants to the apatite lattice structures at the La and Si sites, the conductivity can be increased.5,6 Some of the dopants that have been reported to substitute La and Si in LSO are Sr,7,9 Ca,7 Ba,2,10 Mg,11 Cu,12 Co,13 W,10 and Ti.14 Noviyanti et al.15 added 0.5 and 1.0 of Bi dopant at the La site, while Xiang et al.16 reported that 0.5 doping of Sn at the Si site resulted in conductivity values of 2.46 × 10−4 S cm−1 at 773 K and 5.71 × 10−3 S cm−1 at 1073 K. Whereas various Bi doping at composition of 0.5 ≤ x ≤ 2 on La10xBix(SiO4)6O3 resulted in a conductivity of 2.4 × 10−4 S cm−1 at 973 K,17 Abbassi et al.18 also reported that doping of Bi in CaBaLa6Bi2(SiO4)6O2 has resulted a conductivity of 2.20 × 10−5 S cm−1 at 873 K. However, the simultaneous use of Bi and Sn doping at La and Si sites in the LSO-apatite structure has not been reported before. Therefore, this study aims to study the effect of various concentrations of Bi- and Sn-dopant substituted at La and Si sites on the La99.3Si6O26 structure. To be utilized as an electrolyte of SOFC, the LSO must be synthesized into a solid membrane which is prepared by sintering at high temperatures. It should also be noted that to obtain a high quality and solid membrane, the sintering temperatures of LSO require high temperatures of up to 1873 K.22,23,25,26 Therefore, the use of dopants that have the dual advantages of increasing conductivity and lowering the sintering temperature is an important step to obtain high-quality membranes. Bi is known to have the ability to increase conductivity17–19 as well as reduce sintering temperature.19,24 Meanwhile, Sn is known to be suitable support on Si site which can improve the total conductivity.26 The hydrothermal method was chosen as the synthesis method, in order to obtain a good crystalline powder and high purity.6 Here, we reported a study of the structure and electrical properties of La9.33−xBixSi6−ySnyO26, in which the Bi3+ and Sn4+ were used simultaneously as doping at La and Si sites in various concentration. Our study offers the co-doping strategy of Sn and Bi to enhance the electrical properties several times higher than the pristine LSO and previously reported value.
The experimental design in the synthesis of La9.33−xBixSi6−ySnyO26-apatite type with x = 0.5, 1.0, 1.5 and y = 0.1, 0.3, 0.5 are listed in Table 1.
Target compounds | Sample code | Weight (g) | |||
---|---|---|---|---|---|
Precursors | Dopants | ||||
La2O3 | Na2SiO3·5H2O | Bi2O3 | SnO2 | ||
La9.33Si6O26 | I | 1.6165 | 1.3534 | — | — |
La8.83Bi0.5Si5.9Sn0.1O26 | II | 1.4948 | 1.3003 | 0.1211 | 0.0157 |
La8.83Bi0.5Si5.7Sn0.3O26 | III | 1.4809 | 1.2445 | 0.1199 | 0.0465 |
La8.83Bi0.5Si5.5Sn0.5O26 | IV | 1.4672 | 1.1892 | 0.1188 | 0.0769 |
La8.33Bi1Si5.7Sn0.3O26 | V | 1.3723 | 1.2225 | 0.2356 | 0.0457 |
La7.83Bi1.5Si5.7Sn0.3O26 | VI | 1.2674 | 1.2012 | 0.3472 | 0.0449 |
Lanthanum oxide was initially calcined for the decarbonation purpose at 1373 K for 10 hours. Then, a certain amount of Na2SiO3 was weighed and dissolved in a 50 mL of a 3 M NaOH solution. A solution of Na2SiO3 was mixed with La2O3, SnO2, and Bi2O3. The mixture was transferred into the autoclave and heated in an oven at 503 K for 3 days. The resulting product was washed with deionized water, then filtered and dried in an oven at 393 K for 24 hours.2 All samples were pelleted then sintered at 1773 K for 8 hours.
The structures of the La9.33−xBixSi6−ySnyO26 were determined using a Phillips Analytical X-ray PW3373 diffractometer with a CuKα radiation source (λ = 0.15 nm). The diffraction patterns were scanned from 10 to 80°. The crystal lattice parameters and its cell unit volume were analysed by using a General Structure and Analysis Software II (GSAS-II) and refined by using a pattern from JCPDS no. 04-011-7781 and no. 00-049-0443, for La9.33−xSi6O26 (LSO) and La9.33−xBixSi6−ySnyO26, respectively.
The effect of the Bi3+ and Sn4+ dopant concentrations in the apatite conductivity was tested using Electrochemical Impedance Spectroscopic (EIS, GW Instek 6105G LCR meter). The sintered pellets were coated with silver paste on both sides with the effective area (A) of 0.026 cm−2, and then heated at 873 K for 10 minutes. The pellets are connected with platinum wire to the electrodes where the silver paste is coated. Impedance spectroscopic measurements were carried out at the range between 20 Hz and 5 MHz, a voltage of 1 V and at a range temperature of 573–1073 K. Based on the EIS measurement, the obtained Nyquist plots were interpreted using EIS analyzer. The conductivity value is calculated using the eqn (1).
(1) |
Fig. 1 The XRD patterns of co-doped La9.33−xBixSi6−ySnyO26 apatite phases in various value of x and y for samples with code I–VI. |
The main peaks of LSO are observed at diffraction angles, 2θ, of 21.1°, 22°, 24.8°, 27°, 28°, 30.7°, 30.9°, 31.9°, 32.7°, 38.5°, 39°, 40.7°, 42°, 42.9°, 45°, 46.3°, 47.4°, 48.8°, 49.6° in accordance with the structure of La9.33Si6O26.2,4 The secondary phase consistently appeared in all the co-doped LSO-apatite at around diffraction angle of 15–15.5° with various intensities as shown in Fig. 1. The intensity of the peak at the 2θ of 15° elevated with the increasing content of the Bi-doping. Adding a higher of Bi-doping in the La site of LSO should be eliminating the phase impurities at this 2θ region.15 However, we found contrastly in this study at which the higher content of Bi with the co-existence of Sn-doping in La9.33–xBixSi6–ySnyO26 may possibly lead to the disintegration of the La ions, resulting in La(OH)3 phase.
The Rietveld refinement's result shows that the entire apatite-type electrolyte has hexagonal-based crystal structure with P space group. The certain amount of dopant may change the lattice parameter as shown in Table 2. A larger dopant of Bi3+, with the radius of 1.17 Å, prefers the La site (La3+ radius = 1.15 Å). Meanwhile, a smaller dopant such as Sn4+ that exhibits the radius of 0.71 Å prefers the Si site (Si4+ radius = 0.41 Å).8,16 The greater the Bi concentration, the higher the lattice parameter both on the a- and c-axis. It is because the size of Bi is larger than that of La, especially seen in samples V and VI with Bi concentrations of 1 and 1.5 respectively, as listed in Table 1 and Fig. 2. The possible reasons for increasing the lattice parameters and volume of the unit cell first and then decreasing gradually are as follow: first, the existence of impurity that disturbing the position of atoms or decreasing the content of several atoms in the crystals structure, second, the simultaneous doping of two atoms causes opposite effects to each other in certain compositions.
Sample | Sample code | a = b (Å) | c (Å) | Cell unit volume (Å3) |
---|---|---|---|---|
La9.33Si6O26 | I | 9.695 | 7.179 | 584.413 |
La8.83Bi0.5Si5.9Sn0.1O26 | II | 9.702 | 7.178 | 585.120 |
La8.83Bi0.5Si5.7Sn0.3O26 | III | 9.705 | 7.178 | 585.571 |
La8.83Bi0.5Si5.5Sn0.5O26 | IV | 9.702 | 7.178 | 585.209 |
La8.33Bi1Si5.7Sn0.3O26 | V | 9.724 | 7.183 | 588.276 |
La7.83Bi1.5Si5.7Sn0.3O26 | VI | 9.720 | 7.183 | 587.844 |
Fig. 2 Refined structural parameter of each sample (a) lattice constant a (b) lattice constant c (c) unit cell volume. |
The simulations of the positions of La, Si, and O atoms in the LSO structure are shown in Fig. 3. Based on their positions, La, Si, and O atoms are divided into La1, La2, La3, Si, O1, O2, O3, O4, O5, and O6. It is well known that O6 is interstitial oxygen due to a Frenkel defect that is formed due to the influence of Bi and Sn doping.20 The atomic coordinates for all atoms including the site occupation factor are listed in Table 3.
Atom | Site | x | y | z | Site occupation factor |
---|---|---|---|---|---|
La1 | 2d | 1/3 | 2/3 | −0.0086(7) | 0.83(2) |
La2 | 2d | 1/3 | 2/3 | 0.4948(6) | 0.86(2) |
La3 | 6g | 0.0138(2) | 0.2445(1) | 0.2527(8) | 0.98(1) |
Si | 6g | 0.4005(3) | 0.3709(2) | 0.25 | 1.0 |
O1 | 6g | 0.3223(2) | 0.4829(2) | 0.2572(9) | 1.0 |
O2 | 6g | 0.5942(2) | 0.4722(2) | 0.2522(9) | 1.0 |
O3 | 6g | 0.3377(7) | 0.2518(7) | 0.0731(7) | 1.0 |
O4 | 6g | 0.3491(6) | 0.2569(7) | 0.4329(7) | 1.0 |
O5 | 2c | 0.0 | 0.0 | 0.245(3) | 0.84(2) |
O6 | 2c | 0.0 | 0.0 | 0.379(6) | 0.14(1) |
The bond lengths between the atoms at the LSO for all samples are summarized in Table 4. Changes in bond length of all La–O bonds and Si–O bonds due to the doping effect of Bi and Sn are clearly observed in sample V and sample VI. These changes can also result in the enlargements of the unit cell and create structural imbalances that can affect their physical properties as expected.
Bond distance (Å) | Sample code | |||||
---|---|---|---|---|---|---|
I | II | III | IV | V | VI | |
La1–O1 | 2.576 | 2.577 | 2.577 | 2.577 | 2.581 | 2.580 |
La1–O2 | 2.512 | 2.512 | 2.513 | 2.513 | 2.516 | 2.516 |
La1–O3 | 2.914 | 2.915 | 2.916 | 2.916 | 2.922 | 2.922 |
La2–O1 | 2.430 | 2.430 | 2.431 | 2.431 | 2.435 | 2.434 |
La2–O2 | 2.559 | 2.560 | 2.561 | 2.560 | 2.564 | 2.564 |
La2–O3 | 2.497 | 2.499 | 2.500 | 2.499 | 2.505 | 2.504 |
La3–O1 | 2.716 | 2.718 | 2.718 | 2.718 | 2.724 | 2.723 |
La3–O2 | 2.497 | 2.499 | 2.500 | 2.500 | 2.505 | 2.504 |
La3–O3 | 2.588 | 2.589 | 2.590 | 2.589 | 2.594 | 2.594 |
La3–O4 | 2.435 | 2.435 | 2.435 | 2.430 | 2.437 | 2.437 |
La3–O5 | 2.307 | 2.309 | 2.310 | 2.309 | 2.314 | 2.313 |
La3–O6 | 2.478 | 2.480 | 2.480 | 2.480 | 2.485 | 2.484 |
Si–O1 | 1.606 | 1.607 | 1.608 | 1.607 | 1.611 | 1.610 |
Si–O2 | 1.627 | 1.628 | 1.629 | 1.628 | 1.632 | 1.631 |
Si–O3 | 1.617 | 1.617 | 1.617 | 1.617 | 1.619 | 1.619 |
Si–O4 | 1.626 | 1.626 | 1.626 | 1.626 | 1.628 | 1.628 |
Composition | Sample code | Conductivity (σ)/×10−2 S cm−1 | Linear regression from Arrhenius plot | Activation energy (Ea)/eV |
---|---|---|---|---|
La9.33Si6O26 | I | 0.08 | Ln σ = −8.77 (1000/T) + 2.98; R2 = 0.998 | 0.76 |
La8.83Bi0.5Si5.9Sn0.1O26 | II | 0.07 | Ln σ = −7.99 (1000/T) + 2.18; R2 = 0.997 | 0.69 |
La8.83Bi0.5Si5.7Sn0.3O26 | III | 0.74 | Ln σ = −8.99 (1000/T) + 5.48; R2 = 0.997 | 0.77 |
La8.83Bi0.5Si5.5Sn0.5O26 | IV | 0.38 | Ln σ = −10.07 (1000/T) + 6.46; R2 = 0.956 | 0.87 |
La8.33Bi1.0Si5.7Sn0.3O26 | V | 1.37 | Ln σ = −9.06 (1000/T) + 6.25; R2 = 0.996 | 0.78 |
La7.83Bi1.5Si5.7Sn0.3O26 | VI | 1.84 | Ln σ = −9.33 (1000/T) + 6.81; R2 = 0.997 | 0.80 |
The significant increase in conductivity values in samples V and VI can be explained by changes in the bond length between La–O and Si–O. High conductivity is found in doped-LSO which have the longest La–O and Si–O bond lengths. The addition of the La–O and Si–O bond lengths caused the channel on the c-axis to expand as well, thereby facilitating the movement of oxide ions. Especially for the effect of adding Sn-dopant to the Si site in samples I to IV, the conductivity value increased with increasing Sn from 0 to 0.3 (sample I to sample III). However, a bit increasing of Sn dopant (0.5) dropped the conductivity almost twice from 0.74 to 0.38 S cm−1. The maximum conductivity value was obtained when Sn was 0.3 (sample III). The reason for this data may be explained by looking at the conduction pathway at the position of La at site 6g. An increase in Sn at the Si site in excess of 0.3 can inhibit the ionic conduction pathway by disrupting the position of La at site 6 and pushing it into a narrow conduction pathway, which results in a low conductivity value as produced by sample IV.
The Ea lower than 1.1 eV indicates the ion conduction pathways at which adopting an interstitial ion migration mechanism at the temperature range of 573 to 873 K.21 The existence of the O6 site obtained a from the simulation results confirmed that the dominant mechanism in the conduction of LSO and doped-LSO is the insertion mechanism. The Ea value of each sample together with the value of conductivity is presented in Table 5. Generally, the Ea is lowered after an introduction of Bi dopant with constant Sn concentration. A bit enhancement of Sn dopant to the system drastically declines the σ along with increase the Ea. With the same Bi content (x = 0.5), Ea elevated from 0.69 to 0.87 eV as increasing Sn dopant (from 0.1 to 0.5) which also showed the similar behaviour with the same Sn concentration of 0.3 and increasing of Bi dopant from 0.5 to 1.5 with Ea increased from 0.77 to 0.80 eV.
This journal is © The Royal Society of Chemistry 2021 |