Issue 2, 2022

Direct mechano-sliding transfer of chemical vapor deposition grown silicon nanowires for nanoscale electronic devices

Abstract

Silicon nanowires (SiNWs) have been widely used in the new generation of nanocircuits. In order to establish efficient and reliable fabrication procedures of one-dimensional nanowire devices, controllable assembly of SiNWs is a key challenge. Although various methods have been reported to assemble SiNWs, they brought unexpected problems, such as low efficiency, chemical contamination or high-cost. Here, we demonstrate a mechano-sliding strategy to directly transfer chemical vapor deposition (CVD) grown SiNWs in a solvent-free, fluid-free, and lubricant-free manner with a highly simplified operation. The distribution density of the transferred SiNWs can be controlled by pressure, so that single- or multi-nanowire FET devices for high-sensitivity biological detection or high-density arrays can be obtained. The fabricated device exhibited excellent surface charge response characteristics and chemical modification versatility. These advances pave the way for a feasible, efficient and low-cost approach to fabricate SiNW-based biosensors as a general and powerful platform for chemical detection and biological detection.

Graphical abstract: Direct mechano-sliding transfer of chemical vapor deposition grown silicon nanowires for nanoscale electronic devices

Supplementary files

Article information

Article type
Communication
Submitted
22 Oct 2021
Accepted
09 Dec 2021
First published
09 Dec 2021

J. Mater. Chem. C, 2022,10, 469-475

Direct mechano-sliding transfer of chemical vapor deposition grown silicon nanowires for nanoscale electronic devices

D. Yin, J. Li, J. Feng, W. Liu, Z. Yang, S. Li, M. Li, L. Li and X. Guo, J. Mater. Chem. C, 2022, 10, 469 DOI: 10.1039/D1TC05092C

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements