Issue 30, 2024

High-pressure effects on the electronic properties and photoluminescence of Ag-doped CsCu2I3

Abstract

CsCu2I3 is a popular lead-free metal halide perovskite with good thermal and air stability. To facilitate its applications in optoelectronics, Ag doping and high pressure are employed in this work to improve the optoelectronic properties of CsCu2I3. Using first-principles calculations and experiments, the structural phase change of 10% Ag-doped CsCu2I3 is found to occur at about 4.0 GPa. This reveals the regulation of band structures by hydrostatic pressure. In addition, the high pressure not only increases the emission energy of photoluminescence of 10% Ag-doped CsCu2I3 by more than 0.2 eV, but also increases the emission intensity by multiple times. Finally, the origin of luminescence in 10% Ag-doped CsCu2I3 is attributed to the I vacancies. This work provides insight into the structure and optoelectronic properties of 10% Ag-doped CsCu2I3, and offers significant guidance for the design and manufacturing of future luminescence devices.

Graphical abstract: High-pressure effects on the electronic properties and photoluminescence of Ag-doped CsCu2I3

Supplementary files

Article information

Article type
Paper
Submitted
18 Mar 2024
Accepted
30 Jun 2024
First published
17 Jul 2024

Phys. Chem. Chem. Phys., 2024,26, 20348-20354

High-pressure effects on the electronic properties and photoluminescence of Ag-doped CsCu2I3

Z. Dou, Z. Lin, R. Wang, M. Han, J. Ding, H. Wang, X. Luo, Y. Cheng and N. Han, Phys. Chem. Chem. Phys., 2024, 26, 20348 DOI: 10.1039/D4CP01142B

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