Jaekeun
Lim‡
abc,
Alwani Imanah
Rafieh‡
a,
Naoyuki
Shibayama
d,
Jianxing
Xia
a,
Jean-Nicolas
Audinot
e,
Tom
Wirtz
e,
Sachin
Kinge
f,
Stefan W.
Glunz
cg,
Yong
Ding
a,
Bin
Ding
a,
Hobeom
Kim
ah,
Michael
Saliba
*bi,
Zhaofu
Fei
*a,
Paul J.
Dyson
*a,
Mohammad Khaja
Nazeeruddin
*a and
Hiroyuki
Kanda
*a
aInstitute of Chemical Sciences and Engineering, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne CH-1015, Switzerland. E-mail: zhaofu.fei@epfl.ch; paul.dyson@epfl.ch; mdkhaja.nazeeruddin@epfl.ch; hiroyuki.kanda@epfl.ch
bInstitute for Photovoltaics (ipv), University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany. E-mail: michael.saliba@ipv.uni-stuttgart.de
cFraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg, Germany
dGraduate School of Engineering, Toin University of Yokohama, 1614 Kuroganecho, Aoba, Yokohama, Kanagawa, 225-8503, Japan
eAdvanced Instrumentation for Nano-Analytics (AINA), Luxembourg Institute of Science and Technology (LIST), L-4422 Belvaux, Luxembourg
fToyota Motor Europe, Toyota Motor Technical Centre, Advanced Technology Div., Hoge Wei 33, B-1930 Zaventem, Belgium
gDepartment of Sustainable Systems Engineering (INATECH), University Freiburg, Emmy-Noether-Str. 2, 79110 Freiburg, Germany
hSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
iHelmholtz Young Investigator Group FRONTRUNNER, IEK5-Photovoltaik, Forschungszentrum Jülich, Jülich, Germany
First published on 25th September 2024
Compositional engineering of organic–inorganic metal halide perovskite allows for improved optoelectrical properties, however, phase segregation occurs during crystal nucleation and limits perovskite solar cell device performance. Herein, we show that by applying tetrabutylammonium bistriflimide as an additive in the perovskite precursor solution, ultra-uniform perovskite crystals are obtained, which effectively increases device performance. As a result, power conversion efficiencies (PCEs) of 24.5% in a cell and 21.2% in a module are achieved, together with high stability under illumination, humidity and elevated thermal conditions.
Broader contextAdvancements in perovskite solar cell technology are crucial for enhancing their efficiency and stability, thereby making them more viable for commercial application. Here, we explore the innovative approach of ultra-uniform perovskites introduced by the tetrabutylammonium bistriflimide into the perovskite precursor solution. This method facilitates the formation of highly uniform crystals, thereby addressing the common issue of phase segregation that often occurs during the crystal nucleation process. By employing this technique, we have achieved notably high power conversion efficiencies (PCEs) of 24.5% in single cells and 21.2% in larger modules. Furthermore, these modified perovskite solar cells exhibit exceptional durability under challenging environmental conditions such as continuous light exposure, humidity, and elevated temperatures. |
Early perovskite photovoltaics comprised mono-A-cation based materials. Mono-A-cation perovskites, e.g., MAPbI3, FAPbI3 and CsPbI3, had issues involving phase transitions from the photoactive phase to the photo-inactive phase induced by light irradiation, moisture and high temperatures.26–28 Hence, mixed cation-based composition engineering was introduced to improve optoelectronic properties such as strong light absorption, long electron–hole diffusion length and low exciton binding energy, resulting in higher performance and stability.29,30 Mixed-cation composition engineering has advanced to multiple cation perovskites using various cations such as methylammonium (MA+), formamidinium (FA+), caesium (Cs+), rubidium (Rb+), potassium (K+) and sodium (Na+).3,4,31,32 However, these mixed cations systems encounter problems associated with phase segregation.33 Segregation induces inactive polycrystalline perovskites leading to defects in the grains and at the boundaries. Thus, phase segregation adversely affects film morphology, interfacial behaviour, carrier dynamics and device performance.34
Compositional uniformity is significantly important in the perovskite photovoltaic field for up-scaled perovskite modules beyond small-size perovskite solar cells, which are towards successful commercialization. Previous research has shown that uniform layers incredibly affect stability, which can retard degradation speed and afford better performance and reproducibility.35–38 Therefore, solving the phase segregation issue will lead to improved stability and reproducibility of devices.
We propose homogeneous perovskite crystals utilizing [N4444][TFSI], which strongly affects the photovoltaic performance of perovskite solar cells. The influence of homogeneous perovskite films was investigated by controlling the distribution of cations and anions in all crystal domains with varying concentrations of the additive. This compositional engineering finally provides ultra-uniform perovskite crystals that display high stability against light irradiation, thermal stress, and humidity.
The effects of [N4444][TFSI] on the nanometer-scale atomic distribution in perovskite films were investigated using Helium ion microscopy combined with secondary ion mass spectrometry (HIM-SIMS), as shown in Fig. 2. Fig. 2(a)–(e) show secondary electron (SE) images and HIM-SIMS images of Cs+, FA+, Pb2+ and I− for the reference perovskite films, i.e. without [N4444][TFSI], and Fig. 2(f)–(j) show the target perovskite film. For SE, HIM-SIMS and KPFM mapping, the device stack of reference and target were (FTO/c-TiO2/mp-TiO2/CsFAPbI3) and (FTO/c-TiO2/mp-TiO2/CsFAPbI3 added with 5 mM of [N4444][TFSI]), respectively. In Fig. 2(a), the surface image of the reference sample displays SE image contrasts in perovskite grains as segregation, which may indicate compositional differences within the perovskite film. HIM-SIMS images of the reference sample reveal that Cs+, FA+, and I− are segregated (Fig. 2(b)–(e)), which is consistent with the SEM images (Fig. S2–S4 and Table S1, ESI†). The presence of small and segregated grains can result in high recombination losses and limits the photovoltaic performances.33,42 Notably, the addition of [N4444][TFSI] to the perovskite precursor solution substantially suppresses segregation, as shown in Fig. 2(f)–(j). The Cs+ and FA+ (Fig. 2(g) and (h)) and I− (Fig. 2(j)) are distributed more uniformly compared to the reference film (Fig. 2(b), (c) and (e)). These results suggest that the uniform perovskite crystals induced by the addition of [N4444][TFSI] in the target sample may suppress recombination sites and improve the photovoltaic performance of the target device. In Fig. 2(b)–(d), the numbers (1) and (2) indicate the positions of the non-segregated and segregated parts in the reference, respectively. Mole fractions shown in Table 1 are normalized by the mole fraction of reference indicated by position (1). The number of mole fractions in Table 1 shows that the mole fractions of the Cs+ (0.003), FA+ (0.080) and Pb2+ (0.916) ions at position (2) are different from the position (1) (Cs+ (0.025), FA+ (0.475), and Pb2+ (0.500)). This is due to the segregation of cations and anions at the segregated part at position (2) with respect to the non-segregated part of the same reference at position (1). Interestingly, in the target sample, the mole fractions of Cs+ (0.033), FA+ (0.431), and Pb2+ (0.536) at position (3) are similar to that of the reference at position (1) Cs+ (0.025), FA+ (0.475), and Pb2+ (0.500). This suggests that the [N4444][TFSI] plays a role in inducing the highly uniform perovskite crystal without segregation. Moreover, Kelvin probe force microscope (KPFM) was used to map the surface potential of the perovskite films (Fig. 2(k) and (l)). The reference sample (Fig. 2(k)) shows that there are partially low potential (<350 mV) domains in the perovskite film, which might be due to the segregation of the Cs+, FA+ and I− in the perovskite grain (Fig. 2(b), (c) and (e)). In contrast, the surface potential of the target film with [N4444][TFSI] (Fig. 2(l)) is considerably more uniform with higher potential than the reference, which is consistent with the SIMS results (Fig. 2(g)–(j)). Hence, we found that [N4444][TFSI] promotes the formation of a high and uniform surface potential.43,44 During the nucleation process, the concentration of the [N4444][TFSI] in the perovskite solution will increase significantly towards the end and it can form eutectic ionic liquids with perovskite precursors, where several cations including [N4444]+, Cs+, FA+, Pb2+, and anions including [TFSI]− and I− can co-exist. Unlike DMSO which is a volatile solvent, the [N4444][TFSI] will not be evaporated due to its ionic nature. It will stay throughout the entire process and accumulate at the surface after the completion of the nucleation process.45
Position | Remarks | Cs+ | FA+ | Pb2+ |
---|---|---|---|---|
(1) | Non-segregated part in reference | 0.025 | 0.475 | 0.500 |
(2) | Segregated part in reference | 0.003 | 0.080 | 0.916 |
(3) | Target | 0.033 | 0.431 | 0.536 |
Steady-state photoluminescence emission (PL emission), time-resolved photoluminescence (tr-PL) spectroscopy, and photoluminescence mapping (PL mapping) were used to characterize the perovskite films (FTO/c-TiO2/mp-TiO2/CsFAPbI3) employing different concentrations of [N4444][TFSI], from 0 to 20 mM, added to the perovskite precursor solution. The main peak of the PL emission is close to 800 nm, which intensifies with increasing concentrations of [N4444][TFSI] in the perovskite layer, suggesting that [N4444][TFSI] reduces nonradiative pathways in Fig. 3(a).46–48 This observation is consistent with the enhanced emission lifetime shown in Fig. 3(b), (c) and Table S2 (ESI†), indicating that the increased τ1 and τ2 values may be attributed to the suppression of band-to-band recombination49,50 (note that the perovskite thickness is the same for all the samples). Moreover, the PL mapping image of the reference film shows a uniform photoluminescence intensity in all the films containing [N4444][TFSI] (Fig. 3(d)–(j)). The absolute emission intensity gradually increases with the [N4444][TFSI] concentration, i.e. the [N4444][TFSI] added perovskite improves photoelectronic properties, presumably leading to the improved photovoltaic performance of perovskite solar cells (see below).
X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were characterized with the perovskite films (FTO/c-TiO2/mp-TiO2/CsFAPbI3) employing different concentrations of [N4444][TFSI], from 0 to 20 mM, added to the perovskite precursor solution. For the grazing incidence wide-angle X-ray scattering (2D-GIWAX) and SEM measurement, the device stack of reference and target were prepared as (FTO/c-TiO2/mp-TiO2/CsFAPbI3) and (FTO/c-TiO2/mp-TiO2/CsFAPbI3 added with 5 mM of [N4444][TFSI]), respectively. XRD and 2D-GIWAXS show that [N4444][TFSI] does not alter the orientation of perovskite crystal lattice as there is no shift in (100) peak, see Fig. S5–S7 (ESI†). The addition of [N4444][TFSI], however, affects the morphology of perovskite film, with the average crystallite size increased compared to the reference film, see Fig. S3 (ESI†). The average crystallite size of perovskite with 1 mM of [N4444][TFSI] is 0.888 μm2, which is higher than that of the reference film (0.684 μm2). To investigate the interaction between [N4444][TFSI] and the perovskite grains, density functional theory (DFT) calculations were undertaken and X-ray photoelectron spectroscopy (XPS) was recorded, as shown in Fig. 4. Fig. 4(a) shows the charge density difference of [N4444][TFSI] adsorbed on the Pb2+ terminated (001) perovskite surface. The electronic coupling of [N4444][TFSI] on the perovskite is depicted visually in an isosurface plot of the charge density difference (Δρ). In the PbI2 terminated model, a strong electron depletion (Δρ < 0, negative) appearing around the undercoordinated Pb2+ defect on the perovskite surface is inverse to the electron accumulation (Δρ > 0, positive) around the [N4444][TFSI] where it is in contact with the perovskite surface. This implies that [TFSI]− can coordinate with Pb2+ defect on the perovskite surface, i.e. passivating the surface of the perovskite film.51 To determine the passivation effect of [N4444][TFSI] on the perovskite surface, density of states (DOS) of the perovskite was further studied (Fig. 4(b)), by comparing [N4444][TFSI]-passivated and non-passivated (black line) perovskite films. Trap states were initially generated within the band gap of the perovskite when Pb2+ defects are present on the perovskite surface, however the trap states sharply decrease when the [TFSI]− anions bind to the defect-sites. XPS and ultraviolet photoelectron spectroscopy (UPS) analysis were performed to scrutinize the interaction between [N4444][TFSI] and defects of the perovskite crystal structure and to investigate the energy band diagram, respectively (Fig. 4(c), Fig. S8–S11 and Table S3, ESI†). The reference perovskite and [N4444][TFSI] added perovskite show different values of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) (−6.12 and −4.56 eV for reference; −5.99 and −4.45 eV for perovskite film with additives). The reason why [N4444][TFSI] changed energy level might be the change of the surface termination by ionic anchoring.52,53 Furthermore, target sample (FTO/c-TiO2/meso-TiO2/CsFAPbI3 with 1 mM [N4444][TFSI]) was measured by Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) depth profiling to clarify the location and state of residual [N4444][TFSI] in the perovskite thin film after contributing to the compositional uniformity during crystallization. Fig. S13 (ESI†) clearly shows that most of the ionic liquid is distributed on the surface of the perovskite film. For more details, [N4444]+ is located on the top surface of the perovskite film. [TFSI]− is located on the top surface of the perovskite film and the interface between TiO2 and perovskite film. There is a shift of the Pb 4f peak from 138.7 to 137.8 eV as the concentration of [N4444][TFSI] increases, indicative of an interaction between the Pb2+ ions and [N4444][TFSI]. The XPS of the reference film contains Pb 4f5/2 and Pb 4f7/2 peaks at 141.4 and 137 eV,54,55 respectively, due to the presence of metallic lead, which is not observed for the [N4444][TFSI]-added perovskites, consistent with the calculations of the [N4444][TFSI]-passivated perovskite surface (Fig. 4(a) and (b)). Additionally, Fourier transform infrared spectroscopy (FTIR) of perovskite films with varying amounts (from 0 to 100 mM) of [N4444][TFSI] in perovskite precursor solution indicates that the additive also may interact with the FA+ ion, demonstrated by the C–H bending peak of at 1352 cm−1 shown Fig. S12 (ESI†).56,57
PSC devices were fabricated with the following structure, (FTO/TiO2/perovskite/n-octylammonium iodide (OAI)/spiro-MeOTAD/Au), and their photovoltaic properties assessed. The PCE of the reference device and the best-performing device, i.e. with 1 mM [N4444][TFSI], are 22.91 and 24.53%, respectively, see Fig. 5(a), attributed to the significant increase in VOC (1.17 V) compared to that of the reference device (1.12 V) and superior photovoltaic properties (Fig. S14–S21, ESI†). In addition, the FF of the target device is 81%, which is higher than that of the reference FF of 78%. The improvement in the FF may be correlated to improved charge carrier transport, which indicates that the trap defects are reduced in the target device (Fig. S15, ESI†) due to the uniform perovskite layer and also the passivation effect.58 Some of target devices’ performance is relatively lower than the reference. It might originate from the compact TiO2 deposition by a spray coating method, which can induce pin-hole on the substrate due to ambient dust for instance. UPS and absorption characteristics show that the [N4444][TFSI] almost did not change the bandgap. However, the valence band maximum and conduction band minimum of the perovskite were elevated by the [N4444][TFSI] & OAI passivation, which can diminish the energy barrier and minimize the loss for hole transfer from perovskite to spiro-MeOTAD via the OAI passivation layer (Fig. S11, ESI†). Moreover, the elevated conduction band by a quasi-2D perovskite layer with OAI can block the electrons to spiro-MeOTAD effectively, which reduces the interface recombination and improves open circuit voltage and fill factor. Although the SEM shows a similar thickness of perovskite film, the average of Jsc increased by the [N4444][TFSI], possibly due to the suppression of the defects for the recombination center, which is consistent with the photoluminescence result (Fig. 3). To investigate the residual effect of the [N4444][TFSI] on device performance, we tried to deposit [N4444][TFSI] on the perovskite layer, which associates with the residual [N4444][TFSI] (Fig. S19, ESI†). The device structure is (FTO/ETL/perovskite without additives/[N4444][TFSI] passivation layer/OAI passivation layer/HTM/Au). The highest efficiency of the device with residual [N4444][TFSI] & OAI was higher than the reference but lower than the target device. This indicates that the residual [N4444][TFSI] can play a role in surface passivation and improve photovoltaic performance. This result suggests that the effect of the residual [N4444][TFSI] and compositional uniformity is different and they can synergistically increase the device performance of the perovskite solar cells. We also confirmed the effect of the OAI passivation on the perovskite solar cells, which improved photovoltaic performance (Fig. S19, ESI†). This result indicates that the advantages of passivation and uniformity stand independently, improving the device performance of the perovskite solar cells with the different approaches. Moreover, we demonstrated with bromine doped perovskite solar cells (≈1.6 eV) and p–i–n stack (Fig. S15 and S16, ESI†). These photovoltaic performances were increased by the [N4444][TFSI], which is consistent with the improvement of the parameters shown in Fig. 5. These results can support the generality of the approach. A module with an active area of 30 cm2 was also fabricated with a PCE of 21.2% obtained for the target module, Fig. 5(b) shows the J–V characteristics of the module consisting of seven cells connected in series.
The target devices showed improved stability, retaining almost 100% of the initial PCE after 500 hours of maximum-power point tracking (MPPT) under 1 sun irradiation, compared to that of the reference devices which retained 70% of their initial PCE (Fig. 6(a)). Moreover, the [N4444][TFSI]-added perovskite results in improved stability to heat and relative humidity (RH) (Fig. 6(b) and (c)). Under a thermal condition of 60 °C, the target device retained 90% of the initial PCE after 400 hours, and the target device retained 70% of initial PCE after 360 hours under relative humidity of 80%. Statistics data for stability tests are shown in Fig. S20 (ESI†). Number of samples was three for thermal stability and humidity stability tests. Regarding thermal stability (60 °C), the target sample maintained an average of 84% from the initial efficiency, which was higher than that of devices (72%). As for humidity stability (80% RH), target and reference samples maintained an average of 67% and 40% from the initial efficiency, respectively. The highly hydrophobic nature of the [N4444][TFSI] accumulated at the interface helps to prevent hydrolysis against moisture. Indeed, [N4444][TFSI] is highly hydrophobic and the contact angle of target film is 73.6°, with the reference perovskite film contact angle being only 67.0° (Fig. S22, ESI†). Overall, these results indicated that the uniformity of the perovskite crystal and hydrophobic additives result in improving the stability of the perovskite solar cells.
Fig. 6 Stability of perovskite solar cells. (a) Maximum-power point tracking under 1 sun irradiation, (b) thermal stability at 60 °C, and (c) humidity stability under 80% relative humidity. |
Footnotes |
† Electronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d4ee01841a |
‡ Jaekeun Lim and Alwani Imanah Rafieh contributed equally to this work. |
This journal is © The Royal Society of Chemistry 2024 |