Issue 22, 2024

Post-deposition in situ passivation of AgBiS2 nanocrystal inks for high-efficiency ultra-thin solar cells

Abstract

Ternary chalcogenide AgBiS2 nanocrystals (NCs) have emerged as a new environmentally friendly material for non-toxic solution-processed solar cells, with a record efficiency of ∼9%. To date, however, this has been achieved with NCs that undergo a ligand exchange process exclusively in the solid-state increasing the manufacturing complexity and cost. Improving surface passivation has been the main route towards high performance nanocrystal based solar cell devices, with current strategies relying on methods that only diversify the types of passivating ligands in solutions or stepwise ex situ additional ligand treatment. Herein, we report a post-deposition in situ passivation strategy for AgBiS2 NC inks involving a multifunctional molecular agent that serves to provide effective colloidal dispersibility of the nanocrystal ink, as well as to passivate nanocrystal surfaces after film deposition via in situ dissociation of chloride ions as atomic surface passivants. We show that, upon improved colloidal dispersibility and surface passivation, AgBiS2 NCs yield thin films free from morphological defects with low trap-state density and balanced charge carrier mobilities. As a result, this process leads to ultrathin-film solar cells with a fill-factor of 72% and a power conversion efficiency in excess of 10%, setting a new record for eco-friendly, solution-processed ultrathin solar cells.

Graphical abstract: Post-deposition in situ passivation of AgBiS2 nanocrystal inks for high-efficiency ultra-thin solar cells

Supplementary files

Article information

Article type
Paper
Submitted
23 Jul 2024
Accepted
08 Oct 2024
First published
09 Oct 2024

Energy Environ. Sci., 2024,17, 8885-8892

Post-deposition in situ passivation of AgBiS2 nanocrystal inks for high-efficiency ultra-thin solar cells

J. T. Oh, Y. Wang, C. Rodà, D. Mandal, G. Kumar, G. L. Whitworth and G. Konstantatos, Energy Environ. Sci., 2024, 17, 8885 DOI: 10.1039/D4EE03266G

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