Issue 25, 2024

Surface defect mitigation via alkyl-ligand-controlled purification for stable and high-luminescence perovskite quantum dots

Abstract

Perovskite quantum dots (PQDs) have received considerable attention as fluorescent materials due to their excellent optical properties. However, because PQDs contain ionic bonds, they have the disadvantage of being vulnerable to environmental conditions, so improving their stability is essential. Indeed, recent research has focused on improving both the stability and luminescence of PQDs by mixing them with methyl acetate (MeOAc) to suppress surface defects via purification. MeOAc reacts with the surface ligands of PQDs, resulting in ligand-controlled purification. However, while the ligands are limited for the PQD synthesis, the effect of ligand alkyl-chain length has not been reported. Therefore, we report herein a strategy for obtaining stable PQDs with tunable performances by using amine ligands of various chain lengths. The amine ligand is selected because it is very effective in interacting with the halide vacancies present on the surface of the perovskite crystal structure. The results indicate that MeOAc becomes less effective as the chain length of the ligand is increased, and more effective as the chain length is decreased. Consequently, PQDs treated with MeOAc and a short-chain ligand afford a quantum yield (QY) of 79.2% and are highly stable when exposed to thermal and ambient conditions. Therefore, we suggest a facile approach to suppressing the degradation of PQDs during the fabrication process.

Graphical abstract: Surface defect mitigation via alkyl-ligand-controlled purification for stable and high-luminescence perovskite quantum dots

Supplementary files

Article information

Article type
Paper
Submitted
14 Feb 2024
Accepted
19 May 2024
First published
03 Jun 2024

Nanoscale, 2024,16, 12118-12126

Surface defect mitigation via alkyl-ligand-controlled purification for stable and high-luminescence perovskite quantum dots

T. Y. Im, J. Y. Kim, W. Jang and D. H. Wang, Nanoscale, 2024, 16, 12118 DOI: 10.1039/D4NR00638K

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