S. D. Dhruva,
Jayant Kolte
b,
Pankaj Solanki
c,
Milind P. Deshpande
d,
Vanaraj Solanki
e,
Jiten Tailor
f,
Naveen Agrawal
a,
V. A. Patel
g,
J. H. Markna
c,
Bharat Kataria
c and
D. K. Dhruv
*a
aNatubhaiV. Patel College of Pure and Applied Sciences, The Charutar Vidya Mandal University, Vallabh Vidyanagar-388120, Anand, Gujarat, India. E-mail: shweta@nvpas.edu.in; nvnagrl@gmail.com; dhananjay.dhruv@cvmu.edu.in
bSchool of Physics and Materials Science, Thapar Institute of Engineering and Technology, Patiala-147004, Punjab, India. E-mail: jayantkolte@thapar.edu
cDepartment of Nanoscience and Advanced Materials, Saurashtra University, Rajkot-360005, Gujarat, India. E-mail: pankajsolanki672@gmail.com; jaysukh28@gmail.com; brkataria22@rediffmail.com
dDepartment of Physics, Sardar Patel University, Vallabh Vidyanagar-388120, Anand, Gujarat, India. E-mail: vishwadeshpande@yahoo.com
eDr K. C. Patel R & D Centre, Charotar University of Science and Technology, Changa 388421, Gujarat, India. E-mail: vanarajsolanki.rnd@charusat.ac.in
fDepartment of Physics, M. B. Patel Science College, Sardar Patel University, Anand 388001, Gujarat, India. E-mail: tailorjiten4u@gmail.com
gSophisticated Instrumentation Centre for Applied Research and Testing, Vallabh Vidyanagar 388120, Gujarat, India. E-mail: vap@sicart.res.in
First published on 13th May 2024
In this study, through the utilization of the sol–gel combustion tactic, gadolinium (Gd)-doped cerium oxide (CeO2), Ce1−xGdxO2 (x = 0.00, 0.10, 0.20 and 0.30 (GDC)) ceramics were attained. The synthesized GDC ceramics were investigated using X-ray diffraction (XRD) to scrutinize their crystal structures and phase clarities. The obtained GDC ceramics have a single-phase cubic structure and belong to the crystallographic space group fmm (225). The measurement of the diffraction angle of each reflection and the subsequent smearing of the renowned Bragg's relation provided coarse d-interplanar spacings. The stacking fault (SF) values of pure and Gd-doped CeO2 ceramics were assessed. To muse the degree of preferred orientation (σ) of crystallites along a crystal plane (h k l), the texture coefficient (Ci) of each XRD peak of GDC ceramics is gauged. By determining the interplanar distance (dh k l), the Bravais theory sheds light on the material's development. By exploiting Miller indices for the prime (1 1 1) plane, the lattice constants of GDC ceramics and cell volumes were obtained. Multiple techniques were employed to ascertain the microstructural parameters of GDC ceramics. A pyrometer substantiated the density of GDC ceramics. The room temperature (RT) Fourier transform infrared (FTIR) spectra of both un-doped and Gd-doped CeO2 were obtained. The UV-vis-NIR spectrometer recorded the GDC ceramics' reflectance (R) spectra at RT. For both undoped and Gd-doped CeO2, the absorption coefficient (α) spectra showed two distinct peaks. The R-dependent refractive index (η) and the α-dependent extinction coefficient (k) were determined for all GDC samples. The optical band gap (Eg) was obtained by integrating the Tauc and Kubelka–Munk approaches for GDC ceramics. For each GDC sample, the imaginary (εi) and real (εr) dielectric constants, as well as the dissipation factor (tan
δ), were determined local to the characteristic wavelength (λc). Calculations were made for the Urbach energy (EU) and Urbach absorption coefficient (α0) for GDC ceramics. The minimum and maximum values of optical (σo) and electrical (σe) conductivity for GDC ceramics were determined. The volume (VELF) and surface (SELF) energy loss functions, which depend on the constants εi and εr, were used to measure electrons' energy loss rates as they travel across the surface. Raman spectroscopy revealed various vibrational modes in GDC ceramics. Finally, the implications are discussed herein.
The cubic fluorite structure of cerium oxide is retained up to its melting point (≃2700 K) and is chemically inactive toward most electrode materials. The ionic conductivity of CeO2 is meager, making it inapt for fuel cell applications because of its low oxygen vacancy concentration. The conductivity can be enhanced by including aliovalent dopants such as Sm, Nd, Gd, Ca, Cu, and Pr in the cerium oxide.10 Gadolinium (Gd3+: 119.3 pm), whose ionic radius nearly resembles that of cerium oxide (Ce4+; 111 pm), is the most often used dopant in cerium oxide.11 Oxygen vacancies are created12 due to Gd3+ substitution in the cerium oxide lattice, which increases the electrolyte's ionic conductivity. Gadolinium-doped cerium oxide has a more excellent ionic conductivity than conventional yttria-stabilized zirconia at intermediate temperatures (775–975 K), making it a suitable replacement in solid oxide fuel cells in this temperature range. The temperature, defect dissociation, size of the dopant, the microstructure of sintered pellets, oxygen partial pressure, degree of doping, and sample preparation technique all hinder the ionic conductivity of gadolinium-doped cerium oxide.13 Highly dense ceramics must be synthesised because ionic conductivity is influenced by the synthesis process and the ceramic's density. It is crucial to reduce the sintering temperature because ceramics composed of cerium oxide require high sintering temperatures (1875 K), which lengthen fabrication times and raise the cost of these ceramics. This temperature can be reduced by employing initial nano-sized powders.
As a result of its inherent limitations, no crystal can be considered flawless; an ideal crystal would appear to extend infinitely in every direction. Changes from highly crystallinity-preserving materials cause diffraction peak broadening. Crystallite size (D) and strain (ε) are the main metrics derived from XRD peak width analysis. Several theoretical methods can be used to determine the average D and ε. These include the Debye Scherrer (D–S) method, Williamson–Hall (W–H) method with uniform deformation models, Size–Strain plot (SSP), and Halder–Wagner (H–W) method.
One of the most fascinating and advantageous features of semiconductors is their optical characteristics. Dispersion phenomena cause electromagnetic waves to lose energy as they travel, which makes the real component, called the refractive index (η), and the imaginary part, called the extinction coefficient (k), more complicated. It has been noted that the most precise ways to determine the energy gap (Eg) are by optical absorption (A) measurements.14
Using the sol–gel combustion process, this paper describes the production of gadolinium (Gd)-doped cerium oxide (CeO2) and gives detailed information about the microstructural and optical properties of intrinsic and Gd-doped CeO2 ceramics. It is anticipated that researchers worldwide will leverage results to sneak them into all sorts of devices.
The high-intensity XRD peaks (1 1 1), (2 0 0), (2 2 0), and (3 1 1) were used for a thorough assessment.
The d-interplanar spacings were determined by gauging the diffraction angle of each reflection according to the eminent Bragg's relation, eqn (1):15
![]() | (1) |
The d-spacings for each reflection are given in Table 1.
System | h | k | l | 2θ (°) | Intensity | d values (nm) | SF | Ci | σ | |||
---|---|---|---|---|---|---|---|---|---|---|---|---|
Reporteda | Observedb | Calculatedc | Calculatedd | |||||||||
a ICDD card numbers: GDC-00: 00-043-1002, GDC-10: 01-075-0161, GDC-20: 00-050-0201, and GDC-30: 00-046-0507.b XRD pattern of the bulk.c Bragg's law.d Bravais theory. | ||||||||||||
GDC-00 | 1 | 1 | 1 | 28.7430 | 100.00 | 0.3124 | 0.3103 | 0.3104 | 0.3104 | 0.001013 | 0.7501 | 0.1566 |
2 | 0 | 0 | 33.2750 | 039.80 | 0.2706 | 0.2690 | 0.2691 | 0.2691 | 0.000865 | 1.1057 | ||
2 | 2 | 0 | 47.6670 | 060.60 | 0.1913 | 0.1906 | 0.1907 | 0.1907 | 0.000805 | 0.9882 | ||
3 | 1 | 1 | 56.5240 | 052.40 | 0.1632 | 0.1627 | 0.1627 | 0.1627 | 0.000730 | 1.1560 | ||
GDC-10 | 1 | 1 | 1 | 28.9820 | 100.00 | 0.3128 | 0.3078 | 0.3079 | 0.3079 | 0.001052 | 0.5658 | 0.4503 |
2 | 0 | 0 | 33.5050 | 086.80 | 0.2709 | 0.2672 | 0.2673 | 0.2673 | 0.001056 | 1.7353 | ||
2 | 2 | 0 | 47.8690 | 059.10 | 0.1916 | 0.1899 | 0.1899 | 0.1899 | 0.000823 | 0.7145 | ||
3 | 1 | 1 | 56.7000 | 060.20 | 0.1634 | 0.1622 | 0.1623 | 0.1623 | 0.000770 | 0.9844 | ||
GDC-20 | 1 | 1 | 1 | 29.3250 | 100.00 | 0.3126 | 0.3043 | 0.3044 | 0.3044 | 0.00111 | 2.3349 | 0.6401 |
2 | 0 | 0 | 33.8530 | 044.60 | 0.2708 | 0.2646 | 0.2646 | 0.2646 | 0.00110 | 0.7498 | ||
2 | 2 | 0 | 48.2070 | 013.40 | 0.1915 | 0.1886 | 0.1887 | 0.1887 | 0.00154 | 0.5928 | ||
3 | 1 | 1 | 57.0100 | 008.40 | 0.1634 | 0.1614 | 0.1615 | 0.1615 | 0.00167 | 0.3225 | ||
GDC-30 | 1 | 1 | 1 | 29.6760 | 089.40 | 0.3135 | 0.3008 | 0.3009 | 0.3009 | 0.00230 | 0.3998 | 0.1246 |
2 | 0 | 0 | 34.2170 | 081.90 | 0.2715 | 0.2618 | 0.2619 | 0.2619 | 0.00177 | 1.2630 | ||
2 | 2 | 0 | 48.5160 | 100.00 | 0.1920 | 0.1875 | 0.1875 | 0.1875 | 0.00128 | 1.0908 | ||
3 | 1 | 1 | 57.2890 | 086.40 | 0.1638 | 0.1607 | 0.1607 | 0.1607 | 0.00120 | 1.2464 |
One crystallographic flaw is the stacking fault (SF), which manifests as planar defects in two dimensions and indicates the incompetence of crystallographic planes. Table 1 shows the SFs of Gd-doped and pure CeO2 for four broad peaks, as predicted by eqn (2):16
![]() | (2) |
Utilizing eqn (3), one can discern the crystallites' preferred orientation along a crystal plane (h k l) by gauging the texture coefficient (Ci) of each XRD peak of GDC ceramics:17
![]() | (3) |
Ci signifies the texture coefficient of the plane i, Ii symbolizes the integral intensity, Ii0 designates the integral intensity of the reported data of the corresponding peak i; N, which is equal to 4 in this investigation, represents the number of reflections in the X-ray diffraction pattern being examined. An irrationally oriented sample has a Ci value of one for every reflection; a value greater than one indicates the preferred orientation of the crystallites in that particular direction.
A determination of the GDC ceramics' degree of preferred orientation (σ) can be made by calculating the standard deviation of all Ci values using eqn (4):17
![]() | (4) |
The texture coefficient Ci0 is scaled to 1, and σ is the gauge of the sample's orientation; a value of zero evokes a random orientation, while a more excellent value of σ proves a modified preferred orientation. Table 1 boasts access to the Ci values of the four prominent peaks and the σ value for GDC ceramics.
To gain insight into the evolution of the material, the Bravais theory was used to find the distance (dh k l) between the crystal planes. The theory propositions the related distance between crystal planes (dh k l) and the growth rate of the plane (Rh k l) as . A collection of lattice parameters (a, b, c, α, β, γ) for the GDC crystal system can be used to compute the dh k l according to eqn (5):18
![]() | (5) |
It is possible to deduce the significance of the GDC's (1 1 1) plane from the estimated dh k l, which unveils that d1 1 1 is the greatest (Table 1), emphasizing that h1 1 1 is the smallest. This is due to, according to Bravais theory,18 the growth rate of the (1 1 1) plane R1 1 1 being the smallest.
For the cubic crystal system, eqn (6) (ref. 19) shows a relationship between the lattice parameter (a) and d-value for each Miller index.
a2 = d2 (h2 + k2 + l2) | (6) |
![]() | (7) |
Table 2 displays the results, and Fig. 2 shows the N–R plot, where the intercept was utilized to determine a (where a = intercept).
The lattice parameters and volume computed for GDC are displayed in Table 2
Lattice parameter (a) values increased with increasing amounts of Gd-doped into the parent CeO2, as shown in Fig. 2. The conversion of specific fractions of Ce4+ into Ce3+, a form of cerium with a greater ionic radius (1.14 Å compared to 0.97 Å for Ce4+), could be a likely reason why the lattice parameter value increases when doped.22
Dβ![]() ![]() | (8) |
Scherrer's constant is denoted as K (≃0.9).
On rearranging eqn (8), we obtain eqn (9),
![]() | (9) |
Fig. 3(a) shows the Scherrer plot, and Table 3 provides the average D (=KλSlope). Table 3 does not include the D value for GDC-20 since the current experiment produced a D value greater than 200 nm, which is outside the range of validity for Scherrer's computation, which is limited to average D values between 100 and 200 nm.23 There is a negative correlation between the size of a crystallite and its full width at half maximum (FWHM); therefore, when the parent CeO2 is doped with Gd, the FWHM of all planes increases, leading to smaller crystallites.
![]() | ||
Fig. 3 (a) Scherrer, (b) S–W, (c) εrms − ε, and (d) Monshi plots for GDC-00, -10, 20, and -30 ceramics. |
System | Method | Scherrer | Monshi | W–H (UDM) | SSP | H–W |
---|---|---|---|---|---|---|
a Compressive stress, denoted by a negative ε value for GDC, results from the assertion of equal and opposing pressures, which in turn causes the crystalline structure to shrink.32,33 | ||||||
GDC-00 | D (nm) | 69.7096 | 73.2469 | 72.6126 | 70.7602 | 78.7724 |
ε (×10−3) | 0.0394 | — | −0.0170 | −0.1641 | −1.0646 | |
GDC-10 | D (nm) | 11.6418 | 63.9861 | 60.5633 | 64.8084 | 71.9114 |
ε (×10−3) | 0.0075 | — | −0.1734 | −0.1809 | −1.1738 | |
GDC-20 | D (nm) | — | 81.8293 | 294.8843 | 185.3047 | 205.8943 |
ε (×10−3) | 0.6150 | — | 2.5 | 1.4885 | 9.6591 | |
GDC-30 | D (nm) | 102.5623 | 29.6531 | 24.0781 | 28.5370 | 31.7365 |
ε (×10−3) | 0.2352 | — | −1.51 | −0.8737 | −5.6698 |
![]() | (10) |
Table 3 shows the average ε (=Slope) speculated from the S–W plot (Fig. 3(b)), and it is that disparity in radii between the host cation (Ce) and the dopant (Gd) that stirs strain in the host lattice.
With the aid of the S–W relation eqn (11), it is possible to compute the micro-strain (εrms) along each mineralographic plane:24
εrms2 = 0.64ε2 | (11) |
Fig. 3(c) shows a plot of micro-strain (ε) vs. root mean square strain (εrms), demonstrating that the crystallographic direction of the lattice planes is consistent. When plotted against an abscissa, the data points should form an angle of 45 degrees, indicating that ε has a linear relationship with εrms.25
![]() | (12) |
The average D, which is equal to KλeIntercept−1, was figured out in Fig. 3(d) and is accessible in Table 3.
δD2 = 1 | (13) |
βD![]() ![]() ![]() ![]() | (14) |
The values of ε (=Slope) and D (=KλIntercept−1) are shown in Table 3, derived from the straight-line plot in Fig. 4.
The SSP approach considers the XRD line analysis a combination of Lorentzian and Gaussian functions and uses eqn (15) to compute D and ε:30
![]() | (15) |
D, which is equal to KλSlope−1, and ε, which is equal to , were obtained from the linear fits for GDC indicated in Fig. 5(a); the results can be found in Table 3.
![]() | (16) |
The straight line in plot 5 (b) gives D, which is equal to slope−1, and ε can be determined from the intercept (equal to ). The results can be seen in Table 3.
As a function of λ, Fig. 7 shows the R spectra, and GDC ceramics spectra were computed using the Kubelka–Munk (K–M) theory. The observed maximum λ shifts from ≃240 (11.23% R) to ≃370 (16.90% R) nm for GDC-00, ≃242 (16.58% R) to ≃388 (19.75% R) nm for GDC-10, ≃242 (18.24% R) to ≃377 (21.46% R) nm for GDC-20, and ≃239 (15.14% R) to ≃370 (18.16% R) nm for GDC-30, designate the establishment of CeO2 (GDC-00) and Gd-doped CeO2 (GDC-10, -20, and -30) due to the electron transition from O-2p to Ce-4f.38
For GDC ceramics, Fig. 8 shows how the optical parameters α (=, where t (≃3 mm) is the thickness of the GDC pellets), η (
), and k (
) vary concerning λ. The spectra of the absorption coefficient (α) in Fig. 8(a) revealed two distinct peaks at ≃240 and ≃370 nm for GDC-00, ≃242 and ≃388 nm for GDC-10, ≃242 and ≃377 nm for GDC-20, and ≃239 and ≃370 nm for GDC-30; these peaks can be interpreted as the result of the transition from the O-2p state of the valence band (VB) to the Ce-5d state of the conduction band (CB), and back again to the O-2p state of the VB to the Ce-4f state of the CB, respectively. A key feature of composite materials is the R-dependent η, which is strongly related to the electronic polarizability of ions and the local field within the material; Fig. 8(b) shows that η was found to be ≃2.3961 at a λc (≃370 nm) for GDC-00, ≃2.5998 at a λc (≃388 nm) for GDC-10, ≃2.7261 at a λc (≃378 nm) for GDC-20, and ≃2.4852 at a λc (≃370 nm) for GDC-30,39 and ties well with the empirical relation
.40 As λ increases, η rises due to higher absorption at longer λ.41 The absorption of electromagnetic waves in semiconductors because of inelastic scattering events is reflected in the extinction coefficient (k), which is a measure of the fraction of light energy lost by scattering and/or absorption per unit distance of transit in a medium like ceramic. The value of k, which is directly proportional to α,42 Fig. 8(c), was determined to be ≃19.8782 × 10−5 at a characteristic wavelength λc (≃374 nm) for GDC-00, ≃16.5930 × 10−5 at a λc (≃391 nm) for GDC-10, ≃14.2428 × 10−5 at a λc (≃379 nm) for GDC-20, and ≃17.9612 × 10−5 at a λc (≃374 nm) for GDC-30.
![]() | ||
Fig. 8 (a) Absorption coefficients, (b) refractive indexes, and (c) extinction coefficients of GDC ceramics. |
Combining the Tauc and K-M techniques, as shown in eqn (17), allows one to determine the optical Eg of GDC ceramics:43
![]() | (17) |
The photon energy is denoted by hν, the transition probability is denoted by n, and A is a constant. Fig. 9 shows the plot of (αhν)2 against hν, which is used to find the optical Eg of GDC ceramics. The direct optical Eg value may be determined by extrapolating the straight section of the graphs at the values where (αhν)2 = 0; the results for the direct Eg for GDC ceramics are shown in Table 4.
System | GDC-00 | GDC-10 | GDC-20 | GDC-30 |
Eg (eV) | 3.3297 | 3.9166 | 4.0233 | 3.6676 |
There are two parts to the complex optical dielectric function: the imaginary (εi) and the real (εr) components; the former represents the absorption of energy from an electric field because of dipole motion, and the latter represents the capacity of materials to reduce the speed of light; εi and εr have unswerving relationships with the η and k. Fig. 10 shows the relationship between energy and the changes in the imaginary dielectric constant (IDC) (εi)(=2ηk) (Fig. 10(a)), real dielectric constant (RDC) (εr)(=η2 − k2) (Fig. 10(b)), and loss factor/loss tangent/dissipation factor (Fig. 10(c)) for GDC ceramics. The behavior of the plot is identical for both constants, εi and εr. For GDC-00, the values of εi, εr, and tan
δ are ≃95.5072 × 10−5, ≃6.6384, and ≃16.5694 × 10−5, respectively. For GDC-10, the values are ≃86.5184 × 10−5, ≃10.4754, and ≃12.7537 × 10−5. For GDC-20, the values are ≃77.7433 × 10−5, ≃10.8217, and ≃10.4463 × 10−5. Additionally, for GDC-30, the values are ≃89.5432 × 10−5, ≃7.9569, and ≃14.4378 × 10−5.44
![]() | ||
Fig. 10 Variation in (a) IDC, (b) RDC, and (c) loss tangent as a function of energy for GDC ceramics. |
The relationship between energy (Eg) (=hν) and the changes in lnα, optical conductivity (σo), and electrical conductivity (σe) are shown in Fig. 11. An alteration in the optical state occurs when the VB tail becomes occupied, and the CB edge becomes unoccupied, as shown in eqn (18).45
![]() | (18) |
![]() | ||
Fig. 11 (a) Urbach energy, (b) optical conductivity, and (c) electrical conductivity for GDC ceramics. |
In this context, α0 represents an Urbach absorption coefficient (constant), and EU, which stands for the Urbach energy, determines the slope of the exponential edge and can be seen as the width of the tail of localized states in the forbidden energy gap. The thermal vibrations of the lattice form the basis of the EU. The values of the EU and α0 attained from the plots of lnα against hν in Fig. 11(a) for GDC are as follows: ≃0.5295 eV & ≃1.2661 m−1 for GDC-00; ≃1.9302 eV & ≃94.2829 m−1 for GDC-10; ≃0.3363 eV & ≃0.0265 m−1 for GDC-20; and ≃3.0885 eV & ≃1.1344 m−1 for GDC-30.19,46 The high density of localized states inside the Eg, as implied by the enormous value of the EU, revealed numerous structural flaws in the samples.45 The powerful probes,
and
, represent the mobility of the charge carriers induced by the alternating the electric field of the passing electromagnetic waves45 and were employed in investigating the electrical properties of different materials. As shown in Fig. 11(b) and (c), the highest and lowest values of σ0 and σe for GDC-00, -10, -20, and -30 are ≃3.3423, ≃31
959, ≃3.2891, and ≃3.3514 eV for GDC-00, -10, -20, and -30, respectively.47
Fig. 12 portrays εi and εr constants, reliant volume (Fig. 12(a)) and surface
(Fig. 12(b)) energy loss functions depicting the electron and optical transitions in GDC ceramics. VELF and SELF are used to determine the energy loss rates of electrons as they move across most of the surface. The idiosyncratic peaks of VELF and SELF for GDC were observed at ≃3.3423, ≃3.1877, ≃3.2718, and ≃3.3333 eV.45
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