Anjan Kumara,
Mandeep Kaurbc,
M. Atifd,
Jatinder Kaure,
Ramneet Kaurfg,
Mohammed A. El-Meligyhi,
Parminder Singhj and
Merwa Alhadrawi*kl
aDepartment of Electronics and Communication Engineering, GLA University, Mathura-281406, India
bDepartment of Chemistry, School of Sciences, Jain (Deemed-to-be) University, Bengaluru, Karnataka-560069, India
cDepartment of Sciences, Vivekananda Global University, Jaipur, Rajasthan-303012, India
dDepartment of Physics and Astronomy, College of Science, King Saud University, P O Box 2455, Riyadh 11451, Saudi Arabia
eDepartment of Electronics and Communication Engineering, Division of Research & Innovation, Chandigarh Engineering College, Chandigarh Group of Colleges Jhanjeri, Mohali-140307, Punjab, India
fDepartment of Electronics and Communication and Electrical Engineering, Shobhit University, Gangoh, Uttar Pradesh 247341, India
gDepartment of Electrical and Electronics Engineering, Arka Jain University, Jamshedpur, Jharkhand-831001, India
hApplied Science Research Center, Applied Science Private University, Amman, Jordan
iJadara University Research Center, Jadara University, PO Box 733, Irbid, Jordan
jCentre for Research Impact & Outcome, Chitkara University Institute of Engineering and Technology, Chitkara University, Rajpura, 140401, Punjab, India
kDepartment of Refrigeration and Air Conditioning Techniques, College of Technical Engineering, The Islamic University, Najaf, Iraq. E-mail: Merwa.Alhadrawi7211@outlook.com
lDepartment of Refrigeration and Air Conditioning Techniques, College of Technical Engineering, The Islamic University of Al Diwaniyah, Al Diwaniyah, Iraq
First published on 25th October 2024
Improving the crystallinity of formamidinium triiodide (FAPbI3) perovskite layer is one of the most effective approaches to increase the photovoltaic performance and stability of FAPbI3-based solar cells (FSCs). In the current study, FAPbI3 layers were fabricated through a sequential deposition method. The morphology and crystalline properties of the FAPbI3 layers were modified by controlling the lead iodide (PbI2) precursor by adding pyrrolidinium (Pyr) material into the PbI2 layer and modulating the FAPbI3 crystallization. The Pyr contributed to obtain (001)-preferred FAPbI3 orientation with no yellow photo-inactive phase. Subsequently, it reduced the unreacted PbI2 phase in the perovskite layer and suppressed the defect density, resulting in extended carrier lifetimes and improved ambient air and illumination stabilities. The Pyr-mediated FSCs recorded a champion efficiency of 21.72%, which is higher than that of control FSCs with a maximum efficiency of 19.08%. The developed Pyr-mediated method offers a practical and effective approach to fabricate stable and efficient FSCs.
Since the introduction of metal halide perovskite solar cells (PSCs) in 2009, their power conversion efficiency (PCE) has displayed substantial progress, rising from 3.8% to 26.1%.5–8 These advancements in conversion efficiencies can be attributed to the effective passivation of different defects present in perovskite thin films, as well as the enhanced suppression of non-radiative recombination processes.9–13 The formamidinium-based perovskite (FAPbI3), among the various organic–inorganic hybrid perovskites available, has garnered significant attention due to the numerous advantages it offers. These include a larger and thermally stable organic formamidinium (FA) cation that can substitute for the less stable methylammonium (MA) cation, a narrow energy bandgap that facilitates near-infrared absorption, and a higher decomposition temperature. FAPbI3 is considered the most capable material for high-efficiency solar cells due to its tunable bandgap (ranging from 1.5 to 1.4 eV), low exciton binding energy (less than 50 mV), high absorption coefficient in the range of 104 to 105 cm−1, and long charge carrier diffusion length (ranging from 0.1 to 1.0 μm).14–16
Perovskite films mainly consist of four types of defects: three-dimensional lead clusters, point defects, intrinsic impurities, and grain boundaries. These defects may negatively affect generated carrier movement and aggregation, leading to nonradiative recombination. In addition, they may serve as pathways for ion migration, thereby accelerating the deterioration of perovskite materials.17,18 Additionally, poor surface and grain boundaries might act as direct pathways for the entry of air and moisture.19 In order to tackle these challenges, defect passivation has emerged as a highly effective approach for addressing the long-term stability of perovskite materials from within.
Researchers worldwide are actively addressing the challenges associated with perovskite devices, focusing on various factors such as the development of superior absorber materials, high-quality films, efficient charge injection and extraction, and durable constituent materials. To improve the efficiency and stability of perovskite devices, there has been significant interest in utilizing ionic liquids. These liquids exhibit exceptional versatility due to their distinct and intriguing properties. Ionic liquids have been extensively studied for several decades and have found applications in various fields, including synthesis, catalysts, energy, and medicine.20,21
Impressive progress has been made in the exploration of ionic liquids (ILs), a family of molten salts having a melting temperature below 100 °C, for potential use in PSCs. Different organic cations (such as triazolium, imidazolium, piperidinium, ammonium, pyrrolidinium, pyridinium, and phosphonium) and organic or inorganic anions (such as phosphate, halide, sulfonic acid, tetrafluoroborate, hexafluorophosphate, carboxylic acid, and imide) are typically found in ILs. In general, ILs exhibit a wide range of special qualities, including strong conductivity, solvate capability, low toxicity, wide electrochemical window, and wide liquid range. Notably, ILs have been extensively studied in the realm of PSCs and have demonstrated various functionalities in the development of efficient and durable PSC devices.22,23
Achieving a smooth and homogeneous morphology in perovskite films is crucial for enhancing the performance and stability of the devices.24 Shahiduzzaman et al.25 employed a facile spin coating technique and added 1 wt% of the ionic liquid 1-hexyl-3-methylimidazolium chloride (HMImCl) to a 25 wt% solution of MAPbI3 in DMF. This approach resulted in a uniform MAPbI3 film without pinholes. Wan and co-worker used26 1-ethylpyridinium chloride (1-EC) ionic liquid in a one-step approach on a PEDOT:PSS substrate to study an inverted perovskite solar cell. Experimental results showed remarkable surface coverage, and these ionic liquids were able to produce a pinhole-free MAPbI3 film. The non-passivated sample had photovoltaic PCEs that were less than half of those of optimized devices, which had an optimal concentration of 1 weight percent IL. Seo et al.27 fabricated a compact perovskite absorber layer on an FTO substrate covered with SnO2 by using the ionic liquid methylammonium formate (MAFa) in another investigation. This approach aimed to improve the film quality. In this study, the advantages of incorporating Pyr-ionic liquid into the PbI2 layer of FPSCs was investigated to enhance their performance and stability. By fabricating solar cells with varying concentrations of Pyr and conducting a range of analyses, it was found that the optimal amount of Pyr significantly enhanced PCEs, charge carrier dynamics, and crystal growth within the perovskite film. The inclusion of Pyr also led to reduced recombination losses, improved interfacial carrier transfer dynamics, and lower recombination rates, all contributing to higher device efficiency. Additionally, Pyr-IL modification enhanced the stability of PSCs under ambient air and continuous illumination conditions. Overall, these findings highlight the positive impact of Pyr in advancing the performance and stability of FSC, offering promising prospects for future renewable energy technologies.
Device | VOC (V) | JSC (mA cm−2) | FF (%) | PCE (%) | |
---|---|---|---|---|---|
Control | Average | 1.077 ± 0.013 | 24.18 ± 0.13 | 70.84 ± 0.52 | 18.42 ± 0.37 |
Best | 1.095 | 24.37 | 71.57 | 19.08 | |
0.50% | Average | 1.090 ± 0.011 | 24.20 ± 0.17 | 71.91 ± 0.91 | 18.98 ± 0.51 |
Best | 1.105 | 24.41 | 73.05 | 19.70 | |
1.00% | Average | 1.100 ± 0.012 | 24.31 ± 0.14 | 75.40 ± 0.49 | 20.17 ± 0.35 |
Best | 1.115 | 24.46 | 76.13 | 20.76 | |
1.75% | Average | 1.115 ± 0.008 | 24.30 ± 0.13 | 78.33 ± 1.05 | 21.22 ± 0.31 |
Best | 1.125 | 24.47 | 78.87 | 21.72 | |
2.25% | Average | 1.107 ± 0.010 | 24.31 ± 0.17 | 76.38 ± 0.95 | 20.56 ± 0.39 |
Best | 1.115 | 24.54 | 76.93 | 21.05 |
Fig. 2a illustrates the J–V characteristics of the optimized FSCs using control and Pyr-mediated perovskite layers. These measurements were performed under AM 1.5G illumination, comparing samples with and without the presence of IL. In the absence of IL, the device exhibited a Jsc of 24.37 mA cm−2, Voc of 1.095 V, FF of 71.57%, and PCE of 19.08%. In contrast, with IL, the device showed a Jsc of 24.47 mA cm−2, Voc of 1.125 V, FF of 78.8%, and PCE of 21.72%. The inclusion of IL in the films resulted in an enhanced PCE compared to the control (without IL). To investigate the hysteresis behavior of FSCs, the J–V responses of a typical FSC as control and Pyr-mediated group with different voltage-sweep directions were measured (Fig. 2b). To measure the hysteresis index (HI) of samples, the equation was used. Values of 11.14% and 3.44% were obtained for the control and Pyr-mediated FSCs, respectively. To gain further insight into the effects of the addition of Pyr concentration on the crystalline qualities of films and the optoelectronic properties of the FSCs, the optoelectronic attributes and charge transfer/recombination kinetics of the films were investigated using steady-state photoluminescence (PL), as shown in Fig. 2c. The Pyr-mediated perovskite layers have higher PL peak intensity compared to the pure perovskite film. Increasing the concentration of Pyr from 0.5 to 1.75 wt% initially boosted the PL peak intensity, but it then decreased in the case of 2.25 wt%. The highest intensity was achieved at 1.75 wt%. As a result, the passivation impact of Pyr on defects might be responsible for the varying intensities of the PL peaks. The defect state density in the perovskite film and at the interface between the electron transport layer (ETL) and the perovskite film reaches its minimum level when the concentration is 1.75%. It is important to remember that IL concentrations shouldn't be excessively high, as it may have an impact on the film's solubility and cause an uneven coating, which would then have an impact on the perovskite's future growth and crystallization.
To examine how Pyr affects the transfer dynamics of carriers at the interface in FSCs, electrochemical impedance spectroscopy (EIS) measurements were performed in the absence of light at the open-circuit voltage. Fig. 2d displays the Nyquist plots for different FSCs. The results demonstrate that incorporating Pyr into the PbI2 layer enhances the charge carrier dynamics within the FSCs, leading to improved photovoltaic parameters (refer to Table 1). In particular, the photovoltaic solar cells containing 1.75% Pyr demonstrate a noticeably high charge recombination resistance (Rrec) value of 1418.2 Ω. In contrast, the control devices and the FSCs with 2.25% Pyr show reduced Rrec values of 684.2 and 1241.4 Ω, respectively. This indicates that the electron–hole recombination rate at the interfaces can be mitigated with the optimal Pyr concentration.28 The impedance graph further suggests that the integration of Pyr improves the internal electrical properties of the FSCs, potentially resulting in lower charge transfer resistance and higher charge collection efficiency. These findings highlight the positive influence of Pyr on the interfacial carrier transfer dynamics in FSCs. Overall, the recorded Rrec values for the control, 0.50%-, 1.00%-, 1.25%-, 1.75%-, and 2.25%-Pyr mediated perovskite layers are 684.2, 854.3, 1187.3, 1418.2, and 1241.4 Ω. In addition, the recorded Rct values for the control, 0.50%-, 1.00%-, 1.25%-, 1.75%-, and 2.25%-Pyr mediated perovskite layers are 301.41, 271.32, 152.93, 122.81, 174.36 Ω.
Our work aims to evaluate the influence of Pyr on the crystallization process of perovskite films, given the important role that perovskite morphology plays in the performance of FSCs; this was evaluated using atomic force microscopy (AFM) and scanning electron microscopy (SEM). In comparison to the control, the SEM images of the Pyr-based perovskite films showed better coverage and bigger grain sizes (Fig. 3). Additionally, the SEM study shown in Fig. 3d showed that the perovskite layers based on 2.25% Pyr showed tiny voids and pinholes close to the grain boundaries. The perovskite layer based on 1.75% Pyr (Fig. 3c), on the other hand, showed full coverage and noticeably bigger grain sizes. Based on these data along with XRD (Fig. 5b, will be discussed later) and PL (Fig. 2c) observations, it can be concluded that the presence of Pyr increases the crystallinity of the perovskite layers. To support the claim of larger grain size in Pyr-mediated films, the statistical grain size distributions of the perovskite layers were measured and are depicted in Fig. 3e. As seen in Fig. 3e, the average perovskite grain size of the control layer is 769.8 nm, while that of the 1.75%-Pyr mediated perovskite layer increases to 1452.2 nm.
Fig. 3 FESEM images of (a) control, (b) 1.00%-, (c) 1.75%-, and (d) 2.25%-Pyr based perovskite layers. (e) Grain size distributions of different perovskite layers. |
The AFM analysis provided additional evidence to support the aforementioned observation (Fig. 4a and b). The root mean square (RMS) roughness of the perovskite films with and without the inclusion of the Pyr IL were measured to be 24.19 nm and 36.13 nm, respectively. These results confirm that the addition of the Pyr IL in the spin-coating process leads to the formation of a smooth and uniform perovskite film. This evidence suggests that the incorporation of an IL in the spin-coating of perovskite solution promotes enhanced surface smoothness and uniformity in the resulting perovskite films, as indicated by the significant decrease in RMS roughness compared to films without IL.
Fig. 5a displays the UV-Vis spectra of FAPbI3 films, both with and without the presence of ionic liquids (IL). When comparing the UV-Vis absorption spectra of the Pyr-mediated perovskite film to that of the control, it is evident that they exhibit minimal differences. Expectations were met by the lack of appreciable differences in the UV-Vis spectra between the Pyr-mediated perovskite layer and the control. This is due to the Pyr cations' large size, which keeps them from fitting into the formamidinium lead triiodide lattice.
The produced perovskite layers' X-ray diffraction (XRD) patterns were examined, comparing samples with and without the inclusion of an IL (Fig. 5b). Both samples exhibited the same crystal structures, as evidenced by the presence of peaks at specific angles (2θ). The peaks observed at 2θ = 14.09°, 24.99°, 28.21°, 31.54°, 40.49°, and 42.96° corresponded to the crystal planes (001), (111), (002), (012), (022), and (003), respectively.29,30 This demonstrates that FAPbI3 perovskite has formed. The (001) peak's intensity increased after the IL was added to the perovskite, suggesting better crystal formation. Furthermore, the addition of Pyr material to the PbI2 component resulted in a decrease in the primary peak's full width at half maximum (FWHM) at 14.09°, from 0.177 to 0.147, without affecting its position. This decrease implies that the perovskite structure contains a higher degree of molecular organization. As a result, Pyr helps the FAPbI3 film to have improved grain orientation and preferential growth along the (001) direction. During the annealing of perovskite films, the formation of a cubic PbI2 structure can occur, leading to a detectable signal at 12.79° in the XRD pattern.31 This signal serves as an indication of the presence of residual PbI2 in the film. However, when the perovskite film is treated with Pyr, the intensity of the PbI2 peak is reduced compared to that of the control cell. This reduction implies a decrease in the quantity of remaining PbI2 in the modified perovskite film.
There are two main reasons for the demand for bigger perovskite crystal sizes. First of all, because grain boundaries might serve as locations for charge recombination, it is preferable to minimize their existence. Second, larger crystal sizes may lessen the number of grain boundaries per volume, which would lessen the negative consequences of charge recombination. This improvement in crystal size can enhance both the open-circuit voltage (Voc) and fill factor (FF) of a solar cell.32,33 Larger perovskite crystals facilitate the movement of photoinduced charges over longer distances during charge transfer, leading to improved device performance.34,35
The relationship between the Voc and light intensity was analyzed to determine the ideality factor (n), which is associated with trap-assisted recombination. The graph in Fig. 6 shows that the Pyr-mediated FSCs have a lower ideality factor (n = 1.46) compared to the control device (n = 2.63). This indicates a reduction in trap-assisted recombination in the Pyr-mediated FSCs.36,37 The improved charge carrier dynamics within these FSCs are likely responsible for this decrease in the ideality factor. The lower n value suggests that the Pyr-mediated FSCs experience lower recombination rates, potentially leading to higher efficiencies in converting light into electricity.
Fig. 6 (a) Voltage versus light intensity plot of control and Pyr-mediated PSCs. Dark SCLC curves for hole-only devices based on the (b) control and (c) Pyr-mediated perovskite films. |
To quantitatively characterize the defect properties of perovskite layers, space-charge limited current (SCLC) measurements were conducted on hole-only devices with a structure of FTO/PEDOT:PSS/bare or Pyr-mediated FAPbI3/Spiro-OMeTAD/Au (Fig. 6b and c). As seen in Fig. 6b and c, the current enhances linearly with the voltage (ohmic region) up to a critical point, after which the current rises faster due to trap-state filling by the injected carriers. Then, by further increasing the voltage, the trap state is fully filled and a SCLC regime is created, where the current reveals a quadratic voltage dependence. The critical point's voltage is defined as the trap-filled limit voltage (VTFL), which, as reported in ref. 38 and 39, is directly related to trap density. The electron trap densities of the control and Pyr-mediated samples were calculated to be 12.75 × 1015 and 5.19 × 1015 cm−3, respectively. This demonstrates that the defects of the Pyr-mediated perovskite layer have been considerably reduced. In addition, the hole mobility values of the layers were investigated using SCLC results, as reported in ref. 37, 40 and 41. The hole mobility (μh) of the perovskite layer after the addition of Pyr IL was increased to 1.25 × 10−4 cm2 V−1 s−1 compared to 2.28 × 10−5 cm2 V−1 s−1 for the control sample. These enhancements could reduce carrier recombination and are supposed to boost the FF and VOC of the device.
The presence of Pyr-IL not only enhances the PCE but also contributes to the overall stability and performance of FSCs. Fig. 7 illustrates the normalized efficiency of Pyr-mediated FSCs and control devices over time under different conditions. Specifically, Fig. 7a demonstrates the ambient air stability of unsealed FSCs at room temperature in dark conditions. The graph clearly shows that the Pyr-mediated FSCs exhibit higher stability compared to the control FSCs, as their efficiency declines at a slower rate over time. It is important to investigate the effect of introducing Pyr-IL on the stability of the device under continuous illumination, considering the stability of the perovskite material itself and the interfacial stability of FSC (Fig. 7b). After 72 days of continuous illumination, the unsealed Pyr-mediated FSCs maintained 80% of their initial efficiency, while the unsealed control devices quickly lost their initial efficiency. This improvement in stability can be attributed to the introduction of Pyr-IL, which helps passivate interface defects and suppress ion migration. Consequently, the Pyr-IL modification significantly enhances the stability of the FSCs compared to the control devices.
Fig. 7 Stability tests of unsealed control and Pyr-mediated FPSCs (a) in humid ambient air in dark condition and (b) in ambient air under simulated light irradiance. |
Table 2 lists the PCEs and HI values of different reported sequential-deposited PSCs and compares them with those of the current study. The 21.72% efficiency obtained here with the assistance of Pyr-based modification is comparable with reported PCE values in literature.
Perovskite material | Strategy | PCE (%) | Hysteresis index (%) | Ref. |
---|---|---|---|---|
Perovskite seeds added to PbI2 layer | 21.50 | 1.86 | 42 | |
FAPbI3 | Biguanide hydrochloride added to PbI2 layer | 22.12 | Almost eliminated | 43 |
FAPbI3 | Added 4-(trifluoromethyl)benzylammonium iodide to perovskite | 22.40 | 1.83 | 44 |
FAPbI3 | Temperature-assisted crystal growth | 18.41 | Not reported | 45 |
FAPbI3 | Cesium acetate added to PbI2 layer | 22.19 | Not reported | 46 |
(MAFA)Pb(IBr)3 | Methylammonium thiocyanate added to PbI2 layer | 20.40 | Not reported | 47 |
Cs0.2MA0.2FA0.6Pb(I0.22Br0.78)3 | FABr, PbBr2, and MABr added to PbI2 layer | 21.50 | 4.88 | 48 |
(MAFA)Pb(IBr)3 | Introduced δ-CsPbI2Br into PbI2 layer | 21.62 | 7.17 | 49 |
FAPbI3 | Added pyrrolidinium to PbI2 layer | 21.72 | 3.44% | This study |
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