Noureddine Elboughdiriab,
Shahid Iqbalc,
Sherzod Abdullaevde,
Mohammed Aljohanig,
Akif Safeenf,
Khaled Althubeitig and
Rajwali Khan*hi
aChemical Engineering Department, College of Engineering, University of Ha'il, P.O. Box 2440, Ha'il 81441, Saudi Arabia
bChemical Engineering Process Department, National School of Engineers Gabes, University of Gabes, Gabes 6029, Tunisia
cDepartment of Physics, University of Wisconsin, La Crosse, WI, USA
dEngineering School, Central Asian University, Tashkent, Uzbekistan
eScientific and Innovation Department, Tashkent State Pedagogical University Named After Nizami, Tashkent, Uzbekistan
fDepartment of Physics, University of Poonch Rawalakot, Rawalakot 12350, Pakistan
gDepartment of Chemistry, College of Science, Taif University, P.O. BOX. 110, 21944 Taif, Saudi Arabia
hDepartment of Physics, University of Lakki Marwat, Lakki Marwat, KP, Pakistan. E-mail: rajwali@ulm.edu.pk; khan_phy@foxmail.com
iDepartment of Physics, United Arab Emirates University, United Arab Emirates
First published on 4th September 2024
Expression of concern for ‘Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing’ by Noureddine Elboughdiri et al., RSC Adv., 2023, 13, 35993–36008, https://doi.org/10.1039/D3RA06853F.
An independent expert has assessed Fig. 4 and is concerned the authors have not provided an accurate representation of the experiments that were conducted.
The Royal Society of Chemistry has asked the affiliated institution (University of Lakki Marwat, Pakistan) to investigate this matter and confirm the integrity and reliability of the data in Fig. 4 of the paper. An expression of concern will continue to be associated with this manuscript until we receive information from the institution on this matter.
Laura Fisher
21st August 2024
Executive Editor, RSC Advances
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