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Correction: HfO2-based ferroelectric synaptic devices: challenges and engineering solutions
Taegyu Kwona,
Hyeong Seok Choia,
Dong Hyun Leea,
Dong Hee Hana,
Yong Hyeon Choa,
Intak Jeonb,
Chang Hwa Jungb,
Hanjin Lim*b,
Taehwan Moon*c and
Min Hyuk Park*ade
aDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea. E-mail: minhyuk.park@snu.ac.kr
bSemiconductor Research and Development Center, Samsung Electronics Company, 1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea. E-mail: hanjin.lim@samsung.com
cDepartment of Intelligence Semiconductor Engineering, Ajou University, Suwon, Republic of Korea. E-mail: taehwanm@ajou.ac.kr
dInstitute of Engineering Research, Seoul National University, Seoul 08826, Republic of Korea
eResearch Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
First published on 24th February 2025
Abstract
Correction for ‘HfO2-based ferroelectric synaptic devices: challenges and engineering solutions’ by Taegyu Kwon et al., Chem. Commun., 2025, 61, 3061–3080, https://doi.org/10.1039/d4cc05293e.
The authors regret that a sentence was omitted from the Acknowledgements in the original article. The additional sentence should read “The aforementioned NRF project RS-2024-00441473 is based on the official partnership with the CHIP JU project ViTFOX GA No 101194368.”
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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