Recent advances in CeO2 based abrasives for chemical mechanical polishing

Abstract

Chemical mechanical polishing (CMP) is a critical technique that combines chemical etching and mechanical grinding to achieve atomic-level surface planarization and eliminate subsurface damage in various materials, playing a key role in wafer thinning and smoothing. CeO₂ abrasives, owing to their unique electronic structure and moderate chemical reactivity, exhibit excellent properties such as high polishing rate, reactivity, and selectivity. With advancements in manufacturing processes and the growing demand for ultra-flat surfaces, the preparation and application of CeO₂-based abrasives in CMP have emerged as key research areas. This review paper provides an overview of the synthesis methods for typical CeO₂-based abrasives and their applications. Additionally, the application of CeO₂-based abrasives in CMP slurries is discussed, focusing on their use in polishing silicon-based materials and other non-silicon-based materials. Finally, the common challenges associated with CeO₂-based abrasives in CMP are summarized, and future directions and potential advancements in this field are prospected.