Janek Bernzen and
Karl-Michael Weitzel*
Department of chemistry, Philipps-Universität, Marburg, Germany. E-mail: weitzel@chemie.uni-marburg.de
First published on 14th July 2025
The diffusion characteristics of potassium and rubidium in niobium-doped strontium titanate single crystals were systematically investigated over a range of temperatures. Charge attachment induced transport (CAIT) experiments were employed to induce diffusion by continuous deposition of alkali ions onto the sample surface. Subsequent analysis of the samples using time-of-flight secondary ion mass spectrometry (ToF-SIMS) depth profiling revealed bimodal concentration profiles for all experiments, for both potassium and rubidium. These profiles were modeled assuming a superposition of two mechanisms, identifying two distinct transport pathways, each characterized by a specific diffusion coefficient. The temperature dependence of the diffusion coefficients was evaluated using an Arrhenius approach, enabling the determination of two activation energies for each alkali ion. The process with a lower diffusion coefficient and lower activation energy is attributed to interstitial transport, while the process with a higher diffusion coefficient and higher activation energy correlates with diffusion mediated by defects and is similar between the alkali ions. This study provides insight into the complex interplay between defect chemistry and ion transport mechanisms in niobium-doped strontium titanate, following a previous study on potassium diffusion in undoped strontium titanate.
Strontium titanate (SrTiO3, STO) serves as a model system for perovskite oxides due to its well-defined cubic crystal structure, high crystalline stability, robust resistance to atmospheric corrosion and flexibility for chemical modifications. While the ionic mobility of oxygen vacancies in SrTiO3 is well-documented, cationic transport remains comparatively less explored, particularly for dopants and non-native ions.15,16 This knowledge gap is significant, as the ability of perovskites to incorporate foreign ions is fundamental to their versatility in material properties. For example, the electrical conductivity of STO films can be changed by three orders of magnitude by doping with specific amounts of niobium.17
In a previous study, we demonstrated that the diffusion of potassium in strontium titanate single crystals gives rise to well-defined concentration depth profiles, from which diffusion coefficients and activation energies for the relevant diffusion mechanisms could be derived. That analysis revealed the coexistence of two diffusion processes – one involving interstitial sites and the other vacancy mediated.18
Building on this prior work, the present study focuses on the diffusion dynamics of potassium and rubidium in niobium-doped strontium titanate, with the aim of deepening our understanding of alkali mobility in this material system. It is well-established that the lattice parameter of perovskite oxides, particularly strontium titanate, is influenced by doping,19–21 and this dependency generally extends to activation energies for ionic transport as well.22,23 Consequently, variations in diffusive behavior are anticipated, driven by the interplay between dopant-induced structural modifications and the resulting changes in the energy landscape.
The diffusion profiles were generated in charge attachment induced transport (CAIT) experiments, which is conceptually a unidirectional ion exchange experiment. Detailed descriptions of the CAIT technique can be found in previous publications.24–29 In the experiments, an alkali ion beam (in this case K+ or Rb+) was directed onto niobium-doped and monocrystalline strontium titanate samples. By varying the sample temperature, temperature-dependent diffusion profiles were formed and subsequently characterized using time-of-flight secondary ion mass spectrometry (ToF-SIMS) depth profiling. The temperature dependence of the diffusion profiles enabled the determination of activation energies associated with the underlying diffusion mechanisms.
Depth information is derived from the sputtering time tS, which corresponds to the duration for which the O2+ sputter gun has bombarded the sample surface during the ToF-SIMS experiment and is proportional to the resulting crater depth. The actual depth is determined by multiplying the sputtering time tS with the sputtering rate rS = Δx/Δt, defined as the depth increment Δx per unit time Δt. The sputtering rate depends on several parameters, including the intensity and energy of the sputtering beam as well as the material properties of the sample. To accurately establish the sputtering rate, post-analysis is performed using a tactile profilometer (DekTak XT). By measuring the crater depth and dividing it by the total sputtering time, a constant sputtering rate is assumed, which is justified by the monophasic nature of the sample.
The secondary ion intensity represents the number of ions of a specific species detected using a ToF-SIMS system within a single slice of data (128 × 128 primary ion pulses). Poisson correction is applied to these intensity values to compensate for detector saturation artifacts caused by the dead time of the microchannel plates (MCPs).31 All intensity profiles presented in this work have been Poisson corrected. It is well established that Poisson-corrected ToF-SIMS intensities are proportional to the concentration of the corresponding fragment.32 However, converting these proportional values into absolute concentrations is non-trivial, as the proportionality factor depends on various factors, such as the primary ion beam intensity and the chemical environment of the fragment being ionized. Consequently, normalization must be tailored to the specific data set.
In many CAIT studies, stoichiometric replacement of native ions with foreign ions has been used to normalize transport profiles of the latter.33–35 This approach assumes a macroscopic displacement mechanism for native ions, which is not applicable to the data in this study. As a result, deriving explicit concentration values would be speculative due to the lack of reliable normalization criteria. Instead, the analysis focuses on the determination of diffusion coefficients, which are independent of the absolute scaling of the diffusion profiles. To avoid conveying inaccurate concentration values, the ToF-SIMS intensity data were directly employed to represent the profiles and calculate diffusion coefficients.
In summary, the intensity profiles presented here should be interpreted as being proportional to the ion concentration, without implying explicit concentration values.
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Under the boundary conditions specific to CAIT, particularly the continuous ion attachment at the sample surface, an analytical solution to the diffusion equation is derived. This solution takes the form of a conjugate Gaussian error function, representing the spatial and temporal distributions of the ions within the material (2).36
![]() | (2) |
In this context, x represents the distance from the sample surface. For a given diffusion time t and surface concentration c0, the diffusion profile is only dependent on the diffusion coefficient D. As a result, the diffusion coefficient can be extracted from the profile and utilized as a regression parameter describing the observed transport dynamics.
However, the measured diffusion profiles exhibit a pronounced bimodal characteristic, particularly evident when visualized on a logarithmic scale. Such bimodal transport behavior, indicative of competing diffusion pathways, has previously been demonstrated in the context of potassium diffusion in single crystals of undoped strontium titanate.18 The use of a linear combination of two conjugate Gaussian error functions (3) has proven to be an effective model for describing the obtained depth profiles in that context and is equally applicable to the data presented in this study.
![]() | (3) |
When performing regression analysis by minimizing the sum of squared errors, the superposition of two processes with significantly different intensities often results in a bias toward the dominant process. This can lead to the suppression of the less intense process, as slight measurement inaccuracies and noise affect its representation. To reduce this effect, the regression criterion was adjusted to minimize the sum of squared errors in logarithmic space. This approach effectively reduces the influence of intensity differences, which are then represented as an offset, allowing for a more balanced characterization of both processes. The regression criterion used for the analysis is given by eqn (4).
![]() | (4) |
Based on this approach, the regression model provides an excellent fit to the experimental data and four regression parameters as output – c0,1, c0,2, D1 and D2. Fig. 1 and 2 show the obtained diffusion profiles, overlayed with the proposed model. The individual concentration depth profiles are provided in Fig. S2 and S3 of the ESI† (additional experimental parameters and regression parameters are provided in Table S1 of the ESI†). In the following, particular focus will be placed on the two diffusion coefficients, D1 and D2, as they serve as key metrics for comparing the different experiments conducted in this study.
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Fig. 1 ToF-SIMS concentration profiles for potassium in single crystals of Nb-doped STO overlayed with the proposed model. |
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Fig. 2 ToF-SIMS concentration profiles for rubidium in single crystals of Nb-doped STO overlayed with the proposed model. |
As expected, the diffusion coefficients increase with increasing sample temperature. For rubidium, the diffusion coefficients at equivalent sample temperatures are consistently lower than those for potassium, which is plausible when considering the difference in ionic radii.
The ionic mobility of alkali ions in niobium-doped strontium titanate can be described as thermally activated due to the potential landscape of crystalline solids consisting of a large number of local minima and maxima. The mobile ions are preferably located in the minima – so called sites and need to pass an activation barrier in order to change their position. The height of this barrier is termed activation energy EA. In thermal equilibrium, the thermal energy of the ions in the sample can be assumed to be Boltzmann distributed. Based on this, the temperature dependence of the diffusion coefficient can be described using the Arrhenius eqn (5).
![]() | (5) |
In reverse, for a given set of diffusion coefficients at different temperatures, an activation energy can be derived using a linear regression approach (EA = −kB ∂ln(D)/∂T−1). Each activation energy is specific to a particular diffusion mechanism and reflects the unique energy barrier associated with that process. Given that the obtained diffusion profiles suggest the superposition of two distinct diffusion mechanisms, it is reasonable to assume the presence of two different activation energies. These activation energies can be determined from the diffusion coefficient data presented above, providing further insight into the individual transport processes contributing to the observed ionic mobility. The Arrhenius curves derived from the measured diffusion coefficients are shown in Fig. 3.
The activation energies obtained for rubidium are higher than those for potassium, which is not surprising given the larger ionic radius of rubidium. The smaller of the two diffusion coefficients is comparatively low and exhibits a high degree of similarity across the alkali ions studied.
Due to the metallic conductivity properties of niobium-doped strontium titanate, surface charging of the sample is negligible in this case. There is an indication of alkali metal deposition at the front side probably originating from recombination of alkali ions with electrons (see Fig. S2 and S3 of the ESI†). From the current measured during the CAIT experiment integrated over time, we estimate an upper limit for the concentration of the alkali ions in the region near to the surface of Nb:STO of 5 at%. Evidently, the formation of an electric field across the sample does not occur and all transport can be interpreted as diffusion. This observation justifies the application of Fick's second law as the basis for the regression model described earlier.
The Arrhenius plot in the following Fig. 3 shows a linear regression of the data points for both observed processes.
The CAIT method, while effective in providing diffusion profiles, does not reveal the atomic-level mechanisms underlying the observed processes. However, the determination of activation energies and the identification of two overlapping diffusion processes offer valuable insights and a basis for discussing potential mechanisms. The accurate description of the profiles using a linear combination of two conjugate Gaussian error functions implies that the diffusion mechanisms are, at least approximately, independent. Given that the samples are single crystals, eliminating grain boundaries and dislocation pipes as likely pathways, the observed mechanisms are most plausibly attributed to point defects and interstitial transport.
To interpret the results obtained in this study, a direct comparison with a previous investigation of potassium transport in undoped strontium titanate single crystals is particularly insightful.18 Therefore, in CAIT experiments conducted under comparable conditions, a similar temperature series of diffusion profiles were examined. Two activation energies, 1.23 eV and 1.74 eV, were identified. These diffusion experiments were complemented by STEM analysis and DFT+U calculations. Based on the comprehensive findings, the mechanism associated with the lower activation energy was assigned to the interstitial transport of potassium ions, as it showed strong agreement with the simulation results. The second mechanism, characterized by the higher activation energy, was assigned to vacancy-mediated diffusion, likely dominated by strontium vacancies.
When going from the K+@STO experiment of Bernzen et al.18 to the K+@Nb:STO and Rb+@Nb:STO experiment in this work, the two diffusion coefficients and the two activation energies change. However, there is one very clear analogy between the three data sets. In all cases, the slow process carries an amplitude about a factor of 50 larger than that of the faster process. Indeed, the slower process would not be observable, if it had lower intensity. Here, the fact is that the shape of all concentration depth profiles is the same, implying that a corresponding intensity ratio of the two transport processes is considered to strongly support that the assignment of transport mechanisms should be the same. As a consequence, we suggest to assign the slower process with lower activation energy (but higher amplitude) to interstitial transport (red traces in Fig. 3) and the faster process with higher activation energy to defect mediated transport. A direct overlay of the Arrhenius curves for potassium diffusion in doped and undoped strontium titanate is found in the ESI† in Fig. S4.
Based on this assignment, it would be justified to conclude that in going from the STO to the Nb:STO all activation energies decrease but the diffusion coefficients increase.
The decrease in activation energies may arise from several factors. Firstly, as shown in this study, niobium-doped strontium titanate shows metallic conductivity. The electronic structure of metallic conductors is significantly better equipped to compensate for local charge imbalances compared to semiconductors, such as undoped strontium titanate.
Secondly, niobium (Nb5+) has a larger ionic radius than titanium (Ti4+). It is well established that such dopants can expand the crystal lattice,19–21 a factor known to reduce activation energies for diffusion.22,23 On the other hand, for Nb doping of 0.5 wt%, the lattice expansion is probably smaller than 0.05% or 0.001 Å, making this a minor effect.20 Thirdly, in strontium titanate, niobium functions as a donor dopant, increasing the electron density within the crystal lattice. This enhanced electron density, although delocalized over the crystal lattice, may exert an attractive force on cations, facilitating their diffusion through reduced energy barriers.
For potassium diffusion in undoped STO, the defect mediated pathways were concluded to involve strontium vacancies.18 Given the similarity of transport characteristics observed, it seems at least likely that the potassium and rubidium transport here also correlate with strontium vacancies. Alternatively, one could consider the involvement of oxygen vacancy transport, which has been extensively discussed for undoped STO.37–39 A typical activation energy discussed for oxygen vacancy diffusion in undoped STO is one of 0.6 eV. We note that this number is similar to the lower values reported in Table 2. On the other hand, the introduction of Nb doping increases the concentration of Sr vacancies. The fact that the diffusion coefficients observed in the Nb:STO are larger than those in the STO also supports the assignment of the fast process to Sr vacancy-mediated transport. From another point, given the negative redox potential of the alkali ions offered to the Nb:STO, it does not seem very likely that this particle favors oxygen vacancies with an effectively positive partial charge.
As listed in Table 1, the pre-exponential factor for the Arrhenius expression is on the order of 10−10 cm2 s−1 for the pathway assigned to interstitial transport but on the order of 10−6 cm2 s−1 or even 10−4 cm2 s−1 for the transport concluded to be vacancy-mediated for K+ and Rb+, respectively. This may be considered surprising since this trend is opposite to the trend in intensity contribution. For the time being, the physical interpretation of the pre-exponential factors is difficult. As a consequence, we suggest to perform a systematic study of diffusion coefficients and their activation energy and pre-factors as a function of the Nb doping concentration and possibly also as a function of the Sr vacancy concentration in the future.
Sample | T [K] | D1 [cm2 s−1] | D2 [cm2 s−1] |
---|---|---|---|
K+@Nb:STO 1 | 433.15 | 3.42 × 10−17 | 5.22 × 10−18 |
K+@Nb:STO 2 | 453.15 | 1.24 × 10−16 | 1.18 × 10−17 |
K+@Nb:STO 3 | 473.15 | 2.82 × 10−16 | 2.18 × 10−17 |
Rb+@Nb:STO 1 | 433.15 | 1.70 × 10−17 | 3.35 × 10−18 |
Rb+@Nb:STO 2 | 453.15 | 5.70 × 10−17 | 8.89 × 10−18 |
Rb+@Nb:STO 3 | 473.15 | 2.12 × 10−16 | 1.44 × 10−17 |
EA,1/eV | D0,1/cm2 s−1 | EA,2/eV | D0,2/cm2 s−1 | |
---|---|---|---|---|
K+@Nb:STO | 0.93 | 2.7 × 10−6 | 0.63 | 1.2 × 10−10 |
Rb+@Nb:STO | 1.11 | 1.4 × 10−4 | 0.65 | 1.2 × 10−10 |
Future work will certainly benefit from involving high level theory and/or XPES identification of oxidation states. The analysis of the diffusion coefficients and activation energies presented does not depend on the assumption of a specific oxidation state of the alkali element.
Footnote |
† Electronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d5cp01917f |
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