Namonarayan
Meena‡
a,
Supriya
Sahoo‡
a,
Nilotpal
Deka
a,
Vinayak B.
Gadagin
a,
Jan K.
Zaręba
*b and
Ramamoorthy
Boomishankar
*a
aDepartment of Chemistry and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Dr Homi Bhabha Road, Pune – 411008, India. E-mail: boomi@iiserpune.ac.in
bInstitute of Advanced Materials, Wrocław University of Science and Technology, Wrocław-50-370, Poland. E-mail: jan.zareba@pwr.edu.pl
First published on 2nd January 2025
Organic–inorganic hybrid ferroelectric compounds of the halobismuthate family have emerged as a focal point of research owing to their reduced toxicity and distinctive optical characteristics. This study presents a novel ammonium hybrid perovskite, [BPMBDMA]·[Bi2Br9], which exhibits both ferro- and piezoelectric properties and crystallizes in the polar noncentrosymmetric Pca21 space group. The nonlinear optical (NLO) activity of [BPMBDMA]·[Bi2Br9] was corroborated through second harmonic generation measurements evidencing its noncentrosymmetric structure, which was further substantiated by piezoresponse force microscopy analyses. Ferroelectric P–E hysteresis loop investigations conducted on a thin film sample of [BPMBDMA]·[Bi2Br9] revealed a saturation polarization (Ps) as much as 11.30 μC cm−2 at ambient temperature. To explore the piezoelectric energy harvesting capabilities of [BPMBDMA]·[Bi2Br9], composite materials were fabricated using polylactic acid (PLA) as a matrix. Notably, a device comprising 10 wt% [BPMBDMA]·[Bi2Br9] in PLA demonstrated a remarkable output voltage of 24.6 V and a peak power density of 13.65 μW cm−2. The practical applicability of this device's output performance was further evaluated through a capacitor charging experiment, wherein a 10 μF capacitor was charged within 160 seconds.
Ferroelectricity is a property of crystalline polar materials that exhibit switchable spontaneous polarization under the application of an external electric field.12,13 Materials exhibiting ferroelectricity are excellent candidates for mechanical energy harvesting applications because of their intrinsic piezoelectric properties.5,14,15 These materials are used in various technological applications such as ferroelectric random access memory (FeRAM), memristors, transistors, piezoelectric energy harvesters, wearable electronics, etc.16–20 Several classes of materials, ranging from oxide-based ceramics to organic small molecules, have been extensively studied for their ferroelectric properties.21–23 Though ceramics are well explored as commercial ferroelectrics, organic ferroelectrics are probed for their lower toxicity and easy device fabrication procedures. However, organic materials possess disadvantages such as low Tc, moisture instability, and poor polarization characteristics.24–26 In this context, HOIPs with ferro- and piezoelectric properties are promising alternatives as they can exhibit the advantages of both traditional ceramics and flexible organic/polymeric systems, bridging the gap between these two material types.13,27–29
Bi-derived HOIPs exhibiting ferro- and piezoelectric properties are highly desirable due to their robust polarization behavior and lower environmental impact.30–35 Halobismuthates (alongside haloantimonates, which are not the subject of this paper but are highly structurally related), represented by the general formula RaMbX3b+a (where R is an organic cation, M = Sb(III) or Bi(III), and X = Cl, Br, or I), have emerged as a versatile class of hybrid materials exhibiting remarkable ferroelectric properties and potential applications in optoelectronics and switchable dielectric devices. These compounds have gained immense interest due to their rich structural diversity, ranging from 0D to 3D architectures, though ferroelectric properties are specifically observed in certain stoichiometric arrangements, including RMX4,36 R3M2X9, R2MX5,37 and R5M2X11.38 Among these, the crystallization behavior of R3M2X9 compounds is remarkably diverse, occurring either as infinite 1D double chains, 2D layers, discrete bi-octahedral (0D) units, or tetra-octahedral (0D) units.39 Ferroelectric properties are primarily observed in materials with 2D layered structures or 0D discrete bi-octahedral units.40 The 2D configuration, common in chloride and bromide variants, typically incorporates small alkylammonium cations or unsubstituted rings.41,42 0D bi-octahedral anionic structures, in turn, show less restriction regarding organic cation size and symmetry43,44 and also constitute a preferred arrangement for iodide-based R3M2X9 ferroelectrics.45 This paper aims to demonstrate that the bi-octahedral anionic Bi2Br9 structure can be effectively generated using a bulky, organic arm-asymmetric aromatic amine for the crystallization of the bromobismuthate hybrid.
Herein, we report a ferroelectric A3M2X9-type HOIP of the formula [(p-BrPh)(p-MeBn)NMe2]3·[Bi2Br9]·MeOH, containing a bulkier ammonium cation, [(p-BrPh)(p-MeBn)NMe2] ((p-BrPh)(p-MeBn)NMe2 = N-4-bromophenyl-N-(4-methylbenzyl)-N,N-dimethylammonium: further abbreviated as BPMBDMA, thus the overall compound as [BPMBDMA]·[Bi2Br9]). The halogenobismuthate complex [BPMBDMA]·[Bi2Br9] crystallizes in the polar orthorhombic Pca21 space group, and its non-centrosymmetric nature was confirmed through second harmonic generation (SHG) measurements. The P–E hysteresis loop measurements of [BPMBDMA]·[Bi2Br9] resulted in a saturation polarization of 11.30 μC cm−2. The ferro- and piezoelectric properties of [BPMBDMA]·[Bi2Br9] were further corroborated by characteristic amplitude-bias butterfly and phase-bias hysteresis loops obtained from piezoresponse force microscopy studies. Piezoelectric energy harvesting experiments were conducted on polylactic acid (PLA) polymer composites containing this material, yielding a maximum output voltage of 24.6 V and a power density of 13.65 μW cm−2 for the best-performing 10 wt% device. Additionally, the electrical energy harvested from the 10 wt% [BPMBDMA]·[Bi2Br9]-PLA composite device was successfully used to charge a 10 μF capacitor.
The bulk purity of [BPMBDMA]·[Bi2Br9] was confirmed through powder X-ray diffraction (PXRD) analysis, which showed a good match with the simulated pattern. The elemental analysis studies also match well with the calculated percentage of elements in [BPMBDMA]·[Bi2Br9]. Thermogravimetric analysis (TGA) and differential thermal analysis (DTA) indicated that [BPMBDMA]·[Bi2Br9] is stable up to approximately 410 K (Fig. S6†). To investigate potential temperature-dependent structural changes, differential scanning calorimetry (DSC) measurements were performed, revealing no heat anomalies up to the material's melting point. Additionally, solid-state UV-visible spectroscopy was conducted to explore the optical properties of [BPMBDMA]·[Bi2Br9], showing a pronounced absorption peak starting at 370 nm. The bandgap, derived from a Tauc plot, was calculated to be 2.7 eV, comparable to the bandgaps observed in many organic–inorganic lead-based ferroelectric semiconductors.46 Furthermore, the asymmetry in [BPMBDMA]·[Bi2Br9] is validated by second harmonic generation (SHG) measurements at room temperature. Unsieved powder samples of [BPMBDMA]·[Bi2Br9] exhibited an SHG efficiency of 0.11 relative to the reference potassium dihydrogen phosphate (KDP) (Fig. 2a).
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Fig. 2 (a) Comparison of the SHG emission profiles of [BPMBDMA]·[Bi2Br9] and the reference KDP sample. (b) P–E hysteresis loop for [BPMBDMA]·[Bi2Br9] at room temperature. |
To confirm the dielectric properties of [BPMBDMA]·[Bi2Br9], temperature-dependent dielectric permittivity measurements were carried out from 298 K to 365 K across a frequency range of 10 Hz–105 Hz on compacted pellet samples. The real part of the dielectric permittivity (ε′) was found to be 7.49 at room temperature and at a frequency of 100 kHz. An increasing trend in the dielectric constant was observed as the temperature approached the melting point, attributed to thermally activated free carriers due to ion mobility within the material (Fig. S8a†). Similar trends were observed as well in the frequency-dependent dielectric profiles (Fig. S8b†). The ε′ values increased as the frequency decreased from 105 to 101 Hz, indicating the involvement of all types of polarization mechanisms (electronic, ionic, orientational, and space charge polarization) at lower frequencies. The temperature- and frequency-dependent dielectric loss profiles followed trends similar to those observed for dielectric permittivity (Fig. S9†).
Ferroelectric P–E hysteresis loop measurements performed on the thin film sample of [BPMBDMA]·[Bi2Br9] on an indium tin oxide (ITO)-coated surface revealed a saturation polarization of 11.30 μC cm−2, confirming the bulk polar nature of the material (Fig. 2b). The bulk polarization of [BPMBDMA]·[Bi2Br9] was further validated with the rectangular P–E hysteresis loops obtained at different frequencies and applied voltages (Fig. S11†). Additionally, the ferroelectric fatigue measurements revealed no notable change in the saturation polarization values up to 106 measurement cycles, highlighting the intact polarization properties of [BPMBDMA]·[Bi2Br9] (Fig. S12†). Consistent with the bulk polarization results, the microscopic polarization properties of [BPMBDMA]·[Bi2Br9] were further validated through piezoresponse force microscopy (PFM) studies. The PFM-derived amplitude and phase images of ±90 V showed the presence of differently oriented domains within the material (Fig. 3a and b). Additionally, amplitude-bias butterfly loops and phase-bias hysteresis loops recorded at a single point on the thin film surface using an applied DC bias of ±40 and ±50 V further corroborated its piezoelectric and ferroelectric properties (Fig. 3c, d and S13†). The converse piezoelectric coefficient (d33) was calculated to be in the range of 16.5–18.5 pm V−1 based on the slope of the amplitude-bias butterfly loop.
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Fig. 3 PFM-derived (a) amplitude image and (b) phase image. (c) Topography of [BPMBDMA]·[Bi2Br9]. (d) Amplitude-bias “butterfly” (blue) and phase-bias “hysteresis” (red) loops of [BPMBDMA]·[Bi2Br9]. |
Driven by the ferro- and piezoelectric properties of [BPMBDMA]·[Bi2Br9], polymer composite films were fabricated using the piezoelectric polymer polylactic acid (PLA). Various weight percentages (5, 10, 15, and 20 wt%) of [BPMBDMA]·[Bi2Br9] were dispersed in a chloroform solution of PLA. The resulting homogeneous solutions were poured into Petri dishes and dried to form flexible composite films (Fig. S15†). After drying, the [BPMBDMA]·[Bi2Br9]–PLA composite films were peeled off and characterized (Fig. S16†). From the PXRD analyses, it has been confirmed that the ferroelectric molecule retained its original crystalline structure in all the composite films. Additionally, an increase in peak intensity was observed with higher crystallite loadings (from 5 to 20 wt%) (Fig. S17†). Field emission scanning electron microscopy (FE-SEM) revealed uniform dispersion of ferroelectric crystallites in the films of up to 10 wt%, while agglomeration occurred at a higher loading of 20 wt% [BPMBDMA]·[Bi2Br9]–PLA composite.
Furthermore, to optimize the frequency and force of measurement, the frequency- and force-dependent voltage outputs were collected. The 10 wt% [BPMBDMA]·[Bi2Br9]–PLA device was observed to give the maximum output voltage with 21 N of force at 10 Hz frequency (Fig. S18 and S19†). Therefore, all the remaining piezoelectric nanogenerator measurements were performed with an optimized applied external load of 21 N at a constant frequency of 10 Hz for the [BPMBDMA]·[Bi2Br9]–PLA composite devices. For the batch of the [BPMBDMA]·[Bi2Br9]–PLA composite devices, the maximum open-circuit peak-to-peak voltage (VPP) was found to be 24.6 V for the 10 wt% device. In comparison, the 5, 15, and 20 wt% [BPMBDMA]·[Bi2Br9]–PLA devices exhibited VPP values of 13.76 V, 18.34 V, and 7.17 V, respectively (Fig. 4a and S15†). The reduction in open-circuit voltages for the 15 and 20 wt% devices is likely due to dipole cancellation caused by the overcrowding of [BPMBDMA]·[Bi2Br9] crystallites within the PLA matrix.47 In contrast, a minimal output voltage of 2 V was observed for the neat PLA device, attributed to its inherent piezoelectric properties. This confirms that the enhanced voltage outputs in the composite devices are due to the ferroelectric and piezoelectric nature of the embedded organic–inorganic hybrid material in the PLA matrix. The short-circuit peak-to-peak currents (IPP) for all the [BPMBDMA]·[Bi2Br9]–PLA composite devices were also calculated by connecting an external load resistance of 1 MΩ using Ohm's law. The calculated currents were found to be 6.76, 12.01, 9.49, and 2.67 μA for the 5, 10, 15, and 20 wt% devices, respectively (Fig. 4b and S16†).
To assess their practical utility, voltage drops across all the [BPMBDMA]·[Bi2Br9]–PLA composite devices were measured over a range of load resistances from 0.11 MΩ to 88 MΩ (Fig. 4c). The voltage drop increased with rising resistance up to 22 MΩ and then saturated at higher resistances. The corresponding current profile followed an inverse trend relative to the voltage-drop profile (Fig. S18†). From this peak-voltage drop, the maximum peak power density for the best-performing 10 wt% [BPMBDMA]·[Bi2Br9]–PLA device was calculated to be 13.65 μW cm−2 at a threshold load resistance of 1 MΩ (Fig. 4c). Additionally, cyclic piezoelectric measurements on the best-performing 10 wt% composite device showed no notable changes in the open-circuit voltage output over up to 4000 cycles (Fig. S24†).
Furthermore, the capacitor charging capability of the 10 wt% [BPMBDMA]·[Bi2Br9]–PLA device was evaluated by connecting it to a four-diode bridge rectifier circuit, which converts AC voltages into DC outputs. It was observed that the 10 wt% [BPMBDMA]·[Bi2Br9]–PLA device successfully accumulated a charge of 2.03 μC in a 10 μF capacitor within 160 seconds (Fig. 4d). The corresponding voltage and calculated energy were of the order of 0.2 V and 0.2 μJ, respectively (Fig. S25† and 4d).
Footnotes |
† Electronic supplementary information (ESI) available. CCDC 2403399 and 2403400. For ESI and crystallographic data in CIF or other electronic format see DOI: https://doi.org/10.1039/d4dt03225j |
‡ These authors contributed equally to this work. |
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