Tunde L.
Yusuf
*a,
Olalekan C.
Olatunde
bf,
Daniel
Masekela
c,
Oluwaseyi D.
Saliu
de,
Kwena Desmond
Modibane
c and
Damian C.
Onwudiwe
bf
aDepartment of Chemistry, Faculty of Natural and Agricultural Sciences, University of Pretoria, Private Bag X20, Hatfield 0028, Pretoria, South Africa. E-mail: yusuf.tl@up.ac.za
bMaterial Science Innovation and Modelling (MaSIM) Research Focus Area, Faculty of Natural and Agricultural Sciences, Mafikeng Campus, North-West University, Private Bag X2046, Mmabatho 2735, South Africa
cDepartment of Chemistry, University of Limpopo, Sovenga, Polokwane 0727, South Africa
dDepartment of Chemical Engineering, University of Illinois, 929 W Taylor St, Chicago, Illinois 60607, USA
eDepartment of Industrial Chemistry, University of Ilorin, Permanent Site, Tanke, Ilorin 234031, Nigeria
fDepartment of Chemistry, School of Physical and Chemical Sciences, Faculty of Natural and Agricultural Sciences, North-West University, Mafikeng Campus, Private Bag X2046, Mmabatho 2735, South Africa
First published on 24th June 2025
Environmental pollution and high energy costs are among today's most pressing global challenges. Photocatalysis offers a cost-effective and environmentally sustainable strategy to address these issues by enabling efficient pollutant degradation and hydrogen production. This work constructed a nanoflower MgIn2S4 and nanorod ZnO heterojunction to enhance photocatalytic performance through an interfacial S-scheme charge transfer mechanism. Unlike most reported ZnO-based heterojunctions in the literature, this approach introduces MgIn2S4, a ternary sulfide with a narrow band gap and a high conduction band potential, to form a heterostructure material with a strong redox potential and efficient charge separation. The MgIn2S4/ZnO heterojunction exhibited superior photocatalytic activity, achieving a remarkable 94% tetracycline (TCE) degradation efficiency, 1.4 and 3.9 times higher than that of pristine MgIn2S4 and ZnO, respectively. Furthermore, the heterojunction demonstrated an improved hydrogen evolution rate of 8.29 mmol h−1 g−1, significantly surpassing ZnO (6.96 mmol h−1 g−1) and MgIn2S4 (6.24 mmol h−1 g−1). The enhanced performance is attributed to the efficient interfacial charge transfer, as confirmed by X-ray photoelectron spectroscopy (XPS) analysis and electrochemical characterization, demonstrating charge migration from MgIn2S4 to ZnO. Mechanistic investigations further revealed that the S-scheme charge transfer mechanism effectively promoted charge separation and facilitated the generation of reactive radical species, ultimately leading to improved photocatalytic activity. This study highlights the potential of the rationally designed MgIn2S4/ZnO S-scheme heterojunction as a highly efficient and sustainable photocatalyst for organic pollutant degradation and hydrogen production under visible light irradiation, providing a promising solution to environmental and energy challenges.
Recently, the development of heterojunction photocatalysts has emerged as a successful strategy for enhancing the separation of photogenerated electron–hole pairs, a critical factor in improving photocatalytic performance.10–13 Among these, S-scheme heterojunctions have gained attention due to their unique band alignment, which promotes spatial charge separation while retaining strong redox abilities.14–17 This allows for more efficient degradation of pollutants and enhanced hydrogen evolution. The combination of MgIn2S4, a ternary chalcogenide with excellent photocatalytic properties, and ZnO, a well-established photocatalyst, represents a promising S-scheme heterojunction for environmental remediation and hydrogen production.
MgIn2S4 is an emerging ternary metal sulfide. It has garnered interest for its suitable band gap, high light absorption efficiency, and chemical stability, making it an ideal candidate for visible-light-driven photocatalysis 18,19 It has a narrow band gap of 1–9–2.2 eV and a very high conduction band of 1.2–0.7 eV.20 This high conduction band makes it a suitable reduction photocatalyst.21 However, its performance is often hindered by the rapid recombination of electron–hole pairs. On the other hand, ZnO possesses a wide bandgap and superior charge transport properties, but is limited in its ability to utilize visible light.22,23 Advances in ZnO-based heterojunctions have revealed improved photocatalytic performance by materials such as Ag2O–ZnO,24 and MnS/ZnO.25 However, the potential synergy between ZnO and ternary metal sulphides such as MgIn2S4 has not been significantly explored in photocatalytic processes. Coupling MgIn2S4 with ZnO in an S-scheme heterojunction allows for the preservation of holes with strong oxidation potential in the valence band of ZnO and the conduction band electrons of MgIn2S4 with superior reduction ability. This configuration results in improved visible light absorption, preservation of high redox potential, and enhanced spatial separation of charge carriers.
In this study, we report the rational design and fabrication of an S-scheme MgIn2S4/ZnO heterojunction for the dual application of organic pollutant degradation and hydrogen production. The heterojunction was carefully designed to optimize the interfacial charge transfer between MgIn2S4 and ZnO, facilitating efficient photocatalytic reactions under visible light irradiation. We employed a series of characterization techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-visible diffuse reflectance spectroscopy (UV-vis DRS), to elucidate the structural and optical properties of the heterojunction.
The photocatalytic performance of the MgIn2S4/ZnO heterojunction was evaluated by degrading organic pollutants and producing hydrogen through water splitting under visible light. The results demonstrated a significant enhancement in pollutant degradation and hydrogen evolution compared to the individual components. These findings highlight the potential of the rationally designed S-scheme heterojunction as an effective solution for addressing environmental pollution and the global energy crisis.
The efficiency of the degradation process was estimated using the percentage degradation (eqn (1)):
![]() | (1) |
During the photocatalytic water-splitting process, 100 mg of the catalyst was dispersed in a sealed reaction cell containing 50 mL of distilled water (Scheme S1†). The reaction was initiated using a 150 W Osram lamp. A 50 mL gas syringe was employed to measure the volume of the generated hydrogen and oxygen gases. The ideal gas law, which assumes both gases behave ideally, was applied to calculate the amount of H2 gas produced.
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Fig. 1 (a) XRD spectra of MgIn2S4, ZnO, and MgIn2S4/ZnO, SEM images for (b) MgIn2S4, (c) ZnO, and (d) MgIn2S4/ZnO, and TEM Images for (e) MgIn2S4, (f) ZnO, and (g) MgIn2S4/ZnO. |
The morphology of the materials was studied through their SEM and TEM images. The SEM image of MgIn2S4 shows spherical particles with rough surface texture. It's likely composed of densely packed nanosheets or a porous network, while ZnO displayed agglomerated particles with less defined shapes. The particles appear clustered with some visible small round grains. The SEM image of MgIn2S4/ZnO shows the sheet-like morphology of MgIn2S4 alongside some darker elongated structures corresponding to ZnO nanorods. This suggests a close interfacial contact between the layered MgIn2S4 and ZnO. The TEM images (Fig. reveal a sheet-like structure with well-defined edges in MgIn2S4, indicating a 2D morphology, whereas ZnO exhibits a rod-like structure with a high aspect ratio. The 2D structure of MgIn2S4 and ZnO's characteristics structure show morphological properties optimized for photocatalytic activity. Furthermore, the relatively uniform dispersion of ZnO within the MgIn2S4 matrix provides more active sites for catalytic activity, improving the heterojunction's TCE degradation.
The textural properties of the prepared catalysts were explored using N2 adsorption–desorption isotherms. As shown in Fig. 2, adsorption–desorption isotherms of the MgIn2S4, ZnO, and MgIn2S4/ZnO presented type IV curves. The shape of the loop of MgIn2S4 and MgIn2S4/ZnO isotherms suggests a Type H3 hysteresis, which is indicative of mesoporosity and the presence of irregular pores.30 Furthermore, MgIn2S4/ZnO showed a more pronounced hysteresis than MgIn2S4 due to its enhanced microporosity, which resulted in enhanced pore formation. In ZnO, no visible hysteresis was observed, suggesting the presence of micropores. Table 1 presents a summary of the textural parameters of the catalysts. The BET surface area of MgIn2S4/ZnO was higher than MgIn2S4 and ZnO, signifying a beneficial synergism in the construction of the heterojunction. High surface area implies the presence of more active sites for photocatalytic activity, which could be pivotal for the photocatalytic degradation of organic pollutants and the hydrogen evolution reaction. Fig. 2b shows the pore size distribution plot for the catalysts. The mesoporosity observed for MgIn2S4 and MgIn2S4/ZnO and the microporosity observed for ZnO aligns with the observation from the BET plot. MgIn2S4/ZnO showed the highest pore volume and a broad pore size distribution compared to the pristine materials, confirming the heterojunction's synergistic effect on the material's textural properties.
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Fig. 2 (a) BET plot for MgIn2S4, ZnO, and MgIn2S4/ZnO heterojunctions (b) the pore size distribution plot for the catalysts. |
Material | Surface area (m2 g−1) | Pore volume (cm3 g−1) | Pore diameter (nm) |
---|---|---|---|
MgIn2S4 | 45.26 | 0.22 | 10.07 |
ZnO | 2.84 | 0.032 | 3.32 |
MgIn2S4/ZnO | 101.81 | 0.62 | 3.14 |
The surface chemistry and elemental composition of pristine MgIn2S4, ZnO, and MgIn2S4/ZnO heterojunction were elucidated by X-ray photoelectron spectrometry (XPS) spectra (Fig. 3). The survey scan of the three compounds (Fig. 3a) shows the presence of Mg, In, S in MgIn2S4; Zn, and O in ZnO and confirms the coexistence of MgIn2S4 and ZnO in the heterojunction with the presence of Mg, In, S, Zn and O in the spectra of MgIn2S4/ZnO. Additionally, the core-level spectra of Zn 2p, Zn 3p, O 1s, Mg 1s, In 3d, and S 2p were investigated. The high-resolution spectra of Mg 1s (Fig. 3b) show a single peak at 1340.5 eV in MgIn2S4, while a shift to higher binding energy (1344.8 eV) was observed in MgIn2S4/ZnO, which could be assigned to Mg2+ oxidation state of MgIn2S4.18,31 The peaks observed in the In 3d spectra at 444.3 eV and 451.9 eV could be attributed to 3d3/2 and In 3d5/2 of MgIn2S4, respectively. In the spectra of MgIn2S4/ZnO, these peaks were observed at higher binding energies of 452.6 eV and 441.6 eV (Fig. 3c) 32 The S 2p1/2 and S 2p3/2 peaks of S2− appeared at 161.1 eV and 164.1 eV, respectively. In the spectra of MgIn2S4/ZnO, these peaks were detected at a higher binding energy33 (Fig. 3d). Fig. 3e shows the binding energy of the Zn 2p3/2 of ZnO was shifted from 1022. 2 eV in ZnO to 1020.7 eV in MgIn2S4/ZnO. The O 1s core-level spectrum of ZnO shows the presence of two different forms of oxygen. The peak observed at ∼529.4 eV could be assigned to O2− ions of lattice oxygen, while the peak at 531.0 eV is related to chemisorbed oxygen on the ZnO surface 34 The O 1s spectra were also observed to be shifted towards lower binding energy in the spectra of MgIn2S4/ZnO (Fig. 3f). The shift in the binding energy observed in the spectra of the MgIn2S4/ZnO may be attributed to the change in the electron density resulting from the interfacial interaction between MgIn2S4 and ZnO. The shift in the binding energy of Mg, In, and S to a higher binding energy, while those of Zn and O in ZnO shifted to lower energy, suggests the transfer of electrons from MgIn2S4 to ZnO in the MgIn2S4/ZnO heterojunction.
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Fig. 3 (a) Survey scan of MgIn2S4, ZnO, and MgIn2S4/ZnO (b) high resolution scan of Cu 2p (c) In 3d (d) S 2p (e) Ce 3d (f) O 1s. |
The UV-vis spectroscopy was performed in the 200–800 nm range to explore the optical absorption behaviors of MgIn2S4, ZnO, and MgIn2S4/ZnO heterojunction. As shown in Fig. 4a, MgIn2S4 exhibited a sharp absorption which extends into the visible light range with an absorption edge of ∼600 nm. For ZnO, a sharp absorption in the UV range with an absorption edge around ∼370 nm was observed. The absorption edge corresponds to ZnO characteristic wide band gap. The absorption of MgIn2S4/ZnO was intermediate between that of MgIn2S4 and ZnO, with a band edge around ∼450 nm, suggesting a band structure modification. According to the Tauc plot, the band gap energies (Eg) of MgIn2S4 and ZnO are 2.16 and 3.24 eV, respectively, as shown in Fig. 4(b and c), which are in agreement with values reported in the literature.35,36
The Mott–Schottky (MS) plot was employed in determining the valence band (Evb) and conduction band (Ecb) positions of MgIn2S4 (Fig. 4d) and ZnO (Fig. 4e). The flat band potentials (Vfb) were calculated using the Mott–Schottky equation (eqn (2)):
![]() | (2) |
In the development of photocatalytic materials, charge carrier properties such as charge lifetime, diffusion length, and recombination rate are crucial factors. Modifying these properties is essential for enhancing photocatalytic performance. Electrochemical impedance spectroscopy (EIS) and current density measurements were utilized to investigate the charge carrier characteristics of the materials. Fig. 5a presents the EIS spectra of MgIn2S4, ZnO, and MgIn2S4/ZnO. The semicircle in the EIS spectra provides valuable insights into charge carrier separation, transport, and the resistance of photo-generated charge carriers. The semi-circle of EIS spectra gives important information on the charge carrier separation, transport, and resistance of photo-generated charge carriers. Since the radius of the EIS arc is inversely correlated to the charge-transfer resistance at the electrode–electrolyte interface, the MgIn2S4/ZnO heterojunction possesses lower charge-transfer resistance compared to the pristine MgIn2S4 and ZnO. This showed MgIn2S4/ZnO heterojunction's improved charge carrier separation. Materials showing enhanced charge carrier properties often show enhanced photocurrent charge density. The enhanced photocurrent charge density displayed MgIn2S4/ZnO (Fig. 5b) supports the observation from the EIS spectra, thus confirming the improved charge carrier properties of the heterojunction. The charge carrier density of the MgIn2S4/ZnO heterojunction was almost twice the values for both pristine materials, showing the heterojunction's enhanced charge carrier characteristics. These enhanced charge carrier characteristics are highly important for the enhancement of photocatalytic activity. The photoluminescence (PL) spectra of the samples also confirmed the improved charge properties of the heterojunction material. Compared to ZnO, the heterojunction showed a significantly reduced PL intensity, which implies an improved charge carrier separation (Fig. 5c).
Catalyst | Catalyst dosage | TCE parameters | Degradation efficiency (%) | Rate (min−1) | Ref. |
---|---|---|---|---|---|
LaCoO3/ZnO | 10 mg L−1 | 40 mg L−1; 50 mL; 120 min | 90.0 | 1.79 × 10−2 | 22 |
ZnO/γ-Fe2O3 | 10 mg L−1 | 30 mg L−1; 20 mL; 150 min | 88.5 | 1.32 × 10−3 | 40 |
ZnO/Cus | 10 mg | 30 mg L−1; 25 mL; 60 min | 85.3 | 3.20 × 10−2 | 41 |
ZnO/K-Cn0.5 | 50 mg | 50 mg L−1; 100 mL; 60 min | 90.0 | 3.49 × 10−2 | 42 |
MgIn2S4/ZnO | 30 mg | 10 mg L−1; 50 mL; 60 min | 94.0 | 4.05 × 10−2 | This study |
Process variables often play a significant role in the efficiency of the photocatalytic process. Therefore, the influence of process variables – catalyst dosage and pH – on the degradation of TCE by MgIn2S4/ZnO was evaluated. Fig. 6d shows the influence of catalyst dosage on the efficiency of TCE degradation. The degradation efficiency improved as the amount of the catalyst increased, which could be attributed to improved charge carrier generation arising from increased active sites. Solution pH is a very important factor that influences the surface properties of the photocatalyst and the behavior of the pollutant. Fig. 6e reveals the impact of pH on TCE degradation by MgIn2S4/ZnO. The degradation was highest at near-neutral pH 6.7. The degradation was significantly reduced at alkaline pH, which suggests a reduction in the interaction between the pollutant and the catalyst surface at this pH. Consequently, the stability of the catalyst was evaluated by conducting the experiment over five consecutive cycles for the photocatalytic degradation of TCE under visible light irradiation Fig. 6f. The catalyst demonstrated excellent stability, maintaining nearly the same degradation efficiency throughout all five cycles.
To quantify the improvement, the hydrogen evolution rate (HER) of the heterojunction was compared with its pristine counterparts (Fig. 7b). The MgIn2S4/ZnO heterojunction achieved an HER of 8.29 mmol h−1 g−1, which was notably higher than that of ZnO (6.96 mmol h−1 g−1) and MgIn2S4 (6.24 mmol h−1 g−1). The substantial increase in HER confirms the successful formation of an efficient heterojunction, which enhances charge separation and suppresses recombination, leading to improved photocatalytic activity. The improved hydrogen evolution rate of the MgIn2S4/ZnO heterojunction is primarily attributed to the synergistic interaction between the two components. Individually, both ZnO and MgIn2S4 have inherent limitations. ZnO, despite its high electron mobility, suffers from rapid electron–hole recombination, reducing its overall photocatalytic efficiency. On the other hand, MgIn2S4 has a relatively narrow bandgap, making it more susceptible to photocorrosion and charge recombination. By forming an S-scheme heterojunction, these drawbacks are mitigated, leading to a 19.1% improvement in HER over ZnO and a 32.8% increase compared to MgIn2S4.
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Fig. 8 Radical scavenging experiment (left), and proposed S-scheme charge transfer mechanism for MgIn2S4/ZnO heterojunction (right). |
Based on the scavenging result and the band alignment scheme presented earlier, the charge transfer mechanism of TCE degradation by MgIn2S4/ZnO is shown in Fig. 8b. Generally, materials with lower Fermi energy serve as the oxidation photocatalyst, while material with higher Fermi energy serves as the reduction catalyst. The work function of ZnO and MgIn2S4 have been reported to be 4.7 eV and 4.4 eV, respectively. Therefore, when both materials come into contact, there is a spontaneous transfer of electrons from MgIn2S4 to ZnO until the equilibration of the Fermi energies, which consequently leads to bending of the bands in both materials.43,44 Additionally, the charge transfer creates an internal electric field (IEF) at the interface, which is oriented from MgIn2S4 to ZnO. The transfer of electrons from MgIn2S4 to ZnO is supported by the XPS analysis, which confirms the direction of electron transfer. Under light irradiation, photogenerated h+ and e− are generated in the CB and VB of both catalysts. Influenced by the synergistic activity of the IEF, coulomb interaction, and band edge bending, e− from the CB of ZnO recombines with h+ from the VB of MgIn2S4, leading to the preservation of the highly active e− on the CB of MgIn2S4 and highly oxidative h+ in the VB of ZnO. This proves that the MgIn2S4/ZnO is an S-scheme heterojunction.45
The photogenerated holes in the VB of ZnO are lower than the H2O/˙OH potential (2.76 eV). They are therefore capable of generating ˙OH, which can oxidize the pollutants due to their strong oxidative power. Also, the holes have sufficiently low potential to oxidize adsorbed pollutants directly.46 Additionally, the CB of MgIn2S4 has a higher potential (−1.11 eV) than O2/O2˙− (−0.33 eV), which makes the photogenerated photoelectrons capable of reducing surface O2 to generate O2˙−, which, owing to their strong oxidative potential, are capable of oxidizing the pollutant.47 The photogenerated electrons on the CB of MgIn2S4 are also capable of generating hydrogen through the splitting of water.48 Therefore, the S-scheme mechanism of the MgIn2S4/ZnO heterojunction not only enhanced the charge carrier dynamics of the photocatalyst but also optimized the redox potential of the material for effective pollutant degradation and H2 generation.
Therefore, TCE oxidation takes place at the CB of MgIn2S4, while the h+ in the VB of ZnO is captured by H2O to form O2˙− and direct interaction between TCE and h+ could also take place at the VB of ZnO as suggested by the radical scavenging experiment.
Footnote |
† Electronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d5na00573f |
This journal is © The Royal Society of Chemistry 2025 |