Non-volatile capacitive memory based on spiropyran-derived copolymers for multi-level and ultralow-power data storage and protection

Abstract

The rapid development of information technology requires memory with low-power consumption and high-storage density. Traditional memory systems relying on different current levels to represent various storage states consume significant power and generate massive Joule heat, limiting their applications particularly in circuits with extraordinal high-storage density. In contrast, capacitive memories use capacitance instead of current to denote storage states, substantially reducing power consumption and opening new possibilities for next-generation, high-density integrated circuits. Incorporating molecular switches into the dielectric layer of capacitive memories enables multi-level data-storage through their reversible isomerization. However, challenges remain in enhancing the storage density while maintaining low-power consumption. Here, we developed a capacitive memory based on poly(pentafluorophenyl acrylate-co-spiropyran) (named pPFPA-co-SP) with multi-stimuli responsive behaviors. By precisely controlling the responses to different stimuli, we achieved a capacitive memory with up to 8 storage levels and an exceptionally low power consumption of 1.91 × 10−10 W—3 to 5 orders of magnitude lower than that of conventional non-volatile memories. Additionally, we designed a sophisticated data protection system on this capacitor by manipulating three stimuli (i.e., light, humidity, and acids), enabling the data to be decrypted, hidden, erased, and destroyed on demand, showcasing vast potential applications in smart electronics.

Graphical abstract: Non-volatile capacitive memory based on spiropyran-derived copolymers for multi-level and ultralow-power data storage and protection

Supplementary files

Transparent peer review

To support increased transparency, we offer authors the option to publish the peer review history alongside their article.

View this article’s peer review history

Article information

Article type
Paper
Submitted
03 Nov 2024
Accepted
25 Jan 2025
First published
28 Jan 2025

J. Mater. Chem. C, 2025, Advance Article

Non-volatile capacitive memory based on spiropyran-derived copolymers for multi-level and ultralow-power data storage and protection

R. Yang, C. Zhang, X. Zhang, J. Liu, C. Chang, X. Wu, R. Ji, H. Zhu, D. Wang, S. Feng and W. Huang, J. Mater. Chem. C, 2025, Advance Article , DOI: 10.1039/D4TC04660A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements