Top gate overlaid carbon nanotube transistor electronic synapse arrays for high-performance image recognition

Abstract

Carbon nanotube field-effect transistor (CNTFET) based electronic synapses have great potential for brain-like neuromorphic computing, due to their low power consumption. However, the realization of diverse biological synaptic plasticity in the CNTFET remains a significant challenge due to its small dynamic range, abrupt conductance modulation and limited hardware structure. In this work, we developed a top gate overlaid carbon nanotube field effect transistor (TGO-CNTFET) with a large dynamic range, which successfully mimics synaptic functions, including excitatory and inhibitory synaptic behaviors (EPSC/IPSC), paired-pulse facilitation and depression (PPF/PPD), and spike-timing-dependent plasticity (STDP). We further investigated the synaptic performances of as-fabricated and air-annealed device arrays. Compared with as-fabricated devices, the air-annealed TGO-CNTFET array demonstrated better performance in terms of the dynamic range of STDP and the power consumption, with the latter achieving a power consumption per spike of 1.27 pJ. This improvement is further reflected in the image recognition task on the CIFAR-100 database using ResNet 50, where the air-annealed device achieved an accuracy of 93.2%, whereas the as-fabricated counterpart reached only 90.8%. This work introduces an architectural strategy for developing neuromorphic computing systems that incorporate functional oxides as dielectric layers in TGO-CNTFET-based synapses.

Graphical abstract: Top gate overlaid carbon nanotube transistor electronic synapse arrays for high-performance image recognition

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Article information

Article type
Paper
Submitted
20 Jan 2025
Accepted
20 May 2025
First published
21 May 2025

J. Mater. Chem. C, 2025, Advance Article

Top gate overlaid carbon nanotube transistor electronic synapse arrays for high-performance image recognition

Z. Hou, G. Niu, Y. Wang, H. Meng, J. Yang, B. Zhang, Y. Zhao, J. Li and S. Wu, J. Mater. Chem. C, 2025, Advance Article , DOI: 10.1039/D5TC00252D

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