Issue 6, 2005

Sulfate formation on SOx trapping materials studied by Cu and S K-edge XAFS

Abstract

The elementary steps during oxidative chemisorption of SO2 by a novel composite material consisting of highly disordered benzene tri-carboxylate metal organic framework materials with Cu as central cation and BaCl2 as a second component (Ba/Cu-BTC) and by a conventional BaCO3/Al2O3/Pt based material were investigated. EXAFS analysis on the Cu K-edge in Ba/Cu-BTC indicates the opening of the majority of the Cu–Cu pairs present in the parent Cu-BTC. Compared to Cu-BTC, the BaCl2 loaded material has hardly any micropores and has higher disorder, but it has better accessibility of the Cu2+ cations. This results from the partial destruction of the MOF structure by reaction between BaCl2 and the Cu cations. The SO2 uptake in oxidative atmosphere was higher for the Ba/Cu-BTC sample than for the BaCO3/Al2O3/Pt based material. XRD showed that on Ba/Cu-BTC the formation of BaSO4 and CuSO4 occurs in parallel to the destruction of the crystalline structure. With BaCO3/Al2O3/Pt the disappearance of carbonates was accompanied with the formation of Ba- and Al-sulfates. XANES at the S K-edge was used to determine the oxidation states of sulfur and to differentiate between the sulfate species formed. At low temperatures (473 K) BaSO4 was formed preferentially (53 mol% BaSO4, 47 mol% CuSO4), while at higher temperatures (and higher sulfate loading) CuSO4 was the most abundant species (42 mol% BaSO4, 58 mol% CuSO4). In contrast, on the BaCO3/Al2O3/Pt based material the relative concentration of the sulfate species (i.e., BaSO4 and Al2(SO4)3) as function of the temperature remained constant.

Graphical abstract: Sulfate formation on SOx trapping materials studied by Cu and S K-edge XAFS

Article information

Article type
Paper
Submitted
20 Dec 2004
Accepted
08 Feb 2005
First published
18 Feb 2005

Phys. Chem. Chem. Phys., 2005,7, 1283-1292

Sulfate formation on SOx trapping materials studied by Cu and S K-edge XAFS

H. Dathe, A. Jentys and J. A. Lercher, Phys. Chem. Chem. Phys., 2005, 7, 1283 DOI: 10.1039/B419077G

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