Issue 12, 2010
From the journal:

Nanoscale

Slope-tunable Sinanorod arrays with enhanced antireflection and self-cleaning properties

Yi-Ruei Lin,a   K. Y. Lai,a   Hsin-Ping Wanga  and  Jr-Hau He*ab  

* Corresponding authors

a Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan, ROC
E-mail: jhhe@cc.ee.ntu.edu.tw

b Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, ROC

Abstract

Slope-tunable Si nanorod arrays (NRAs) were fabricated with colloidal lithography and reactive ion etching (RIE). Sharpened NRAs fabricated by increasing the SF6/O2 flow ratio during RIE exhibit enhanced antireflection (AR) and hydrophobic properties, which are attributed to the smooth gradient in the effective refractive index of NRAs, and the enlarged water/air interface of the water drops in the NRA layers, respectively. Enhanced AR characteristics via modifying the slope of NRAs are accompanied by broad-band working ranges, omnidirectionality, and polarization insensitivity. Detailed experimental and theoretical analysis of slope-tunable NRAs should benefit the development of various self-cleaning optoelectronic devices with efficient light management.

Graphical abstract: Slope-tunable Si nanorod arrays with enhanced antireflection and self-cleaning properties

About
Cited by
Related
Download options Please wait...

Article information

DOI
https://doi.org/10.1039/C0NR00402B
Article type
Paper
Submitted
14 Jun 2010
Accepted
27 Jul 2010
First published
08 Oct 2010

Nanoscale, 2010,2, 2765-2768

Permissions

Request permissions

Slope-tunable Si nanorod arrays with enhanced antireflection and self-cleaning properties

Y. Lin, K. Y. Lai, H. Wang and J. He, Nanoscale, 2010, 2, 2765 DOI: 10.1039/C0NR00402B

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements