Issue 34, 2012
From the journal:

Chemical Communications

Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals†

Luyang Wang,a   Jie Lian,b   Peng Cui,a   Yang Xu,b   Sohyeon Seo,a   Junghyun Lee,a   Yinthai Chanb  and  Hyoyoung Lee*a  

* Corresponding authors

a National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry, Samsung-SKKU Graphene Center, Sungkyunkwan University, Suwon, Republic of Korea
E-mail: hyoyoung@skku.edu
Fax: +82-31-299-5934
Tel: +82-31-299-4566

b Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore

Abstract

Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.

Graphical abstract: Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals

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Article information

DOI
https://doi.org/10.1039/C2CC17543F
Article type
Communication
Submitted
02 Dec 2011
Accepted
10 Jan 2012
First published
12 Jan 2012

Chem. Commun., 2012,48, 4052-4054

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Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals

L. Wang, J. Lian, P. Cui, Y. Xu, S. Seo, J. Lee, Y. Chan and H. Lee, Chem. Commun., 2012, 48, 4052 DOI: 10.1039/C2CC17543F

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