Electrical-field-induced structural change and charge transfer of lanthanide–salophen complexes assembled on carbon nanotube field effect transistor devices†
Abstract
The application of a negative gate voltage on a
* Corresponding authors
a
Institut de Chimie Moléculaire et des Matériaux d’Orsay, Université Paris Sud 11, CNRS, Bât. 420, 15 rue Georges Clemenceau, 91405 Orsay Cedex, France
E-mail:
talal.mallah@u-psud.fr, gurvan.magadur@u-psud.fr
Fax: 33 1 69154754
Tel: 33 1 69154749
b Laboratoire de Physique des Interfaces et Couches Minces, Ecole Polytechnique, F-91128 Palaiseau, France
c Laboratoire de Photonique Quantique et Moléculaire, 61, avenue du Président Wilson, 94230 Cachan, France
The application of a negative gate voltage on a
G. Magadur, F. Bouanis, E. Norman, R. Guillot, J. Lauret, V. Huc, C. Cojocaru and T. Mallah, Chem. Commun., 2012, 48, 9071 DOI: 10.1039/C2CC34134D
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