Issue 98, 2012
From the journal:

Chemical Communications

Effect of redox proteins on the behavior of non-volatile memory†

Ji Hyun Lee,a   Seung Chul Yew,b   Jinhan Cho*c  and  Youn Sang Kim*ad  

* Corresponding authors

a Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul, Republic of Korea
E-mail: younskim@snu.ac.kr

b DRAM Process Architecture Team, Memory Division, Semiconductor Business, Samsung Electronics Co, Ltd, Banwol-Dong, Hwasung-si, Gyeonggi-do, Republic of Korea

c Department of Chemical and Biological Engineering, Korea University, Seoul, Republic of Korea
E-mail: jinhan71@korea.ac.kr

d Advanced Institutes of Convergence Technology, Iui-dong 864-1, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-270, Republic of Korea

Abstract

We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles).

Graphical abstract: Effect of redox proteins on the behavior of non-volatile memory

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Article information

DOI
https://doi.org/10.1039/C2CC35959F
Article type
Communication
Submitted
17 Aug 2012
Accepted
22 Oct 2012
First published
05 Nov 2012

Chem. Commun., 2012,48, 12008-12010

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Effect of redox proteins on the behavior of non-volatile memory

J. H. Lee, S. C. Yew, J. Cho and Y. S. Kim, Chem. Commun., 2012, 48, 12008 DOI: 10.1039/C2CC35959F

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