Issue 23, 2012
From the journal:

Journal of Materials Chemistry

Post-deposition dipping method for improving the electronic properties of a narrow bandgap conjugated polymer†

Yeong Don Park,‡a   Jin Kuen Park,‡b   Wi Hyoung Lee,c   Boseok Kang,c   Kilwon Cho*c  and  Guillermo C. Bazan*b  

* Corresponding authors

a Department of Energy and Chemical Engineering, University of Incheon, Incheon 406-772, Republic of Korea

b Center for Polymers and Organic Solids, University of California at Santa Barbara, California, USA
E-mail: bazan@chem.ucsb.edu

c Department of Chemical Engineering, Polymer Research Institute, Pohang University of Science and Technology, Pohang 790-784, Korea
E-mail: kwcho@postech.ac.kr

Abstract

By dipping into hexane, it is possible to efficiently eliminate the low MW component and also improve the molecular ordering of a conjugated polymer thin film. These changes improve the performance of field-effect transistors. The correlation between the nanoscalar structural features and the electrical properties enables us to determine both the appropriate dipping time and how the low MW component influences electronic properties.

Graphical abstract: Post-deposition dipping method for improving the electronic properties of a narrow bandgap conjugated polymer

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Article information

DOI
https://doi.org/10.1039/C2JM31183F
Article type
Communication
Submitted
10 Nov 2011
Accepted
22 Apr 2012
First published
24 Apr 2012

J. Mater. Chem., 2012,22, 11462-11465

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Post-deposition dipping method for improving the electronic properties of a narrow bandgap conjugated polymer

Y. D. Park, J. K. Park, W. H. Lee, B. Kang, K. Cho and G. C. Bazan, J. Mater. Chem., 2012, 22, 11462 DOI: 10.1039/C2JM31183F

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