Issue 8, 2012

Direct growth of nanographene films by surface wave plasma chemical vapor deposition and their application in photovoltaic devices

Abstract

Here, we report direct synthesis of nanographene films on silicon (n-Si) and glass (SiO2) substrates by microwave assisted surface wave plasma (MW-SWP) chemical vapor deposition (CVD) and their application in photovoltaic devices. The technique is a metal catalyst free, rapid growth process and the film can be deposited on different substrates; thus simplifying the synthesis process for various device applications. The directly grown graphene film consists of triangular shaped nanographene domains with sizes of 80–100 nm in length. The nanographene domains interconnect to form a continuous film which shows metallic characteristics. A Schottky junction based photovoltaic device is fabricated with directly grown nanographene film on n-Si and a conversion efficiency of 2.1% is achieved. This finding shows that a transparent nanographene film can be deposited on different substrates and can be integrated for various devices.

Graphical abstract: Direct growth of nanographene films by surface wave plasma chemical vapor deposition and their application in photovoltaic devices

Supplementary files

Article information

Article type
Communication
Submitted
03 Nov 2011
Accepted
02 Feb 2012
First published
08 Mar 2012

RSC Adv., 2012,2, 3225-3230

Direct growth of nanographene films by surface wave plasma chemical vapor deposition and their application in photovoltaic devices

G. Kalita, M. S. Kayastha, H. Uchida, K. Wakita and M. Umeno, RSC Adv., 2012, 2, 3225 DOI: 10.1039/C2RA01024K

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