Low variability with high performance in thin-film transistors of semiconducting carbon nanotubes achieved by shortening tube lengths
Abstract
Extremely low variability with excellent device performances in a SWCNT-TFT array has been demonstrated in SWCNT-TFTs fabricated by using a semiconducting ink of short SWCNTs with an average length of 340 nm; the field-effect mobility of 3.9 ± 0.45 cm2 V−1 s−1, on/off ratio from 105 to 106, and hysteresis of ≈0.5 V. AFM observations revealed that the