Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp

Abstract

Chemical imprinting was conducted on ZnO semiconductor films via a chemical reaction at the contact regions between a micro-patterned PDMS stamp and ZnO films. In addition, we applied the chemical imprinting on Li doped ZnO thin films for high performance TFTs fabrication. The representative micro-patterned Li doped ZnO TFTs showed a field effect mobility of 4.2 cm² V⁻¹ s⁻¹ after sintering at 300 °C.