Issue 73, 2013
From the journal:

Chemical Communications

Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning†

Yong Liu,*a   Jinle Lan,b   Wei Xu,*c   Yaochun Liu,b   Yan-Ling Pei,d   Bo Cheng,a   Da-Bo Liu,a   Yuan-Hua Linb  and  Li-Dong Zhao*e  

* Corresponding authors

a Laboratory of Structural Steel, Functional Materials and Heat Treatment Processing Technology, Beijing Institute of Aeronautical Materials, Beijing 100095, China
E-mail: liuy431@gmail.com

b State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

c Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
E-mail: xuw@mail.ihep.ac.cn

d School of Materials Science and Engineering, Beihang University, Beijing 100191, China

e Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
E-mail: lidong-zhao@northwestern.edu

Abstract

Upon 20% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for BiCuSe0.94Te0.06O.

Graphical abstract: Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning

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Article information

DOI
https://doi.org/10.1039/C3CC44578J
Article type
Communication
Submitted
19 Jun 2013
Accepted
12 Jul 2013
First published
12 Jul 2013

Chem. Commun., 2013,49, 8075-8077

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Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning

Y. Liu, J. Lan, W. Xu, Y. Liu, Y. Pei, B. Cheng, D. Liu, Y. Lin and L. Zhao, Chem. Commun., 2013, 49, 8075 DOI: 10.1039/C3CC44578J

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