Issue 14, 2013

Low temperature solution-processed high performance photodiode based on Si–ZnO core–shell structure

Abstract

Radial heterojunction photodiodes based on a silicon nanowire arrays (SiNWs)–zinc oxide (ZnO) core–shell structure is demonstrated in this report. The heterojunction can be constructed by spin-coating ZnO nanoparticles onto SiNWs and a low temperature post-annealing process (<270 °C). The photodiode displays typical diode rectifying characteristics with an ideality factor of as low as 1.28, and shows an excellent photoresponse in both visible and near infrared regions in which a peak value of 0.54 A/W at zero bias was attained. The sensitivity is superior to that of previously reported devices fabricated with vacuum-deposition methods. In contrast, the planar silicon–ZnO junction only displays the peak photoresponsivity of 0.34 A/W. The superior performance of radial junction is ascribed to the highlight-harvesting capability, large interfacial area and efficient charge carrier collection arising from the core (SiNWs)–shell (ZnO) structure. Here, high temperature processes are dispensable by using facile solution-processed techniques, which avoid thermal minority lifetime degradation of silicon and simplify the fabrication process of the photodiodes.

Graphical abstract: Low temperature solution-processed high performance photodiode based on Si–ZnO core–shell structure

Supplementary files

Article information

Article type
Paper
Submitted
04 Sep 2012
Accepted
28 Jan 2013
First published
27 Feb 2013

Phys. Chem. Chem. Phys., 2013,15, 4970-4974

Low temperature solution-processed high performance photodiode based on Si–ZnO core–shell structure

D. Liu, X. Shen, T. Song, J. Hu and B. Sun, Phys. Chem. Chem. Phys., 2013, 15, 4970 DOI: 10.1039/C3CP43083A

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