Issue 8, 2013
From the journal:

Physical Chemistry Chemical Physics

Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors†

Syed Raza Ali Raza,a   Young Tack Lee,a   Youn-Gyoung Chang,a   Pyo Jin Jeon,a   Jae Hoon Kim,a   Ryong Ha,b   Heon-Jin Choib  and  Seongil Im*a  

* Corresponding authors

a Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea
E-mail: semicon@yonsei.ac.kr
Fax: +82-2-392-1592
Tel: +82-2-2123-2842

b Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea

Abstract

We have fabricated transparent top-gate ZnO nanowire (NW) field effect transistors (FETs) on glass and measured their trap density-of-states (DOS) at the dielectric/ZnO NW interface with monochromatic photon beams during their operation. Our photon-probe method showed clear signatures of charge trap DOS at the interface, located near 2.3, 2.7, and 2.9 eV below the conduction band edge. The DOS information was utilized for the photo-detecting application of our transparent NW-FETs, which demonstrated fast and sensitive photo-detection of visible lights.

Graphical abstract: Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors

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Article information

DOI
https://doi.org/10.1039/C3CP44027C
Article type
Communication
Submitted
12 Nov 2012
Accepted
09 Jan 2013
First published
10 Jan 2013

Phys. Chem. Chem. Phys., 2013,15, 2660-2664

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Photoelectric probing of the interfacial trap density-of-states in ZnO nanowire field-effect transistors

S. R. A. Raza, Y. T. Lee, Y. Chang, P. J. Jeon, J. H. Kim, R. Ha, H. Choi and S. Im, Phys. Chem. Chem. Phys., 2013, 15, 2660 DOI: 10.1039/C3CP44027C

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