Issue 19, 2013
From the journal:

Nanoscale

Origin of the self-limited electron densities at Al2O3/SrTiO3 heterostructures grown by atomic layer deposition – oxygen diffusion model

Sang Woon Lee,a   Jaeyeong Heob  and  Roy G. Gordon*a  

* Corresponding authors

a Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA
E-mail: gordon@chemistry.harvard.edu
Fax: +1-617-495-4723
Tel: +1-617-496-5393

b Department of Materials Science and Engineering, Chonnam National University, Gwangju, Korea
Fax: +82-62-530-1699
Tel: +82-62-530-1716

Abstract

Recently, 2-dimensional electron gas (2-DEG) was discovered at the interface of Al2O3/SrTiO3 (STO) heterostructures, in which the amorphous Al2O3 layers were grown by atomic layer deposition (ALD). The saturated electron density at the Al2O3/STO heterostructures above the critical thickness of Al2O3 is explained by an oxygen diffusion mechanism.

Graphical abstract: Origin of the self-limited electron densities at Al2O3/SrTiO3 heterostructures grown by atomic layer deposition – oxygen diffusion model

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Article information

DOI
https://doi.org/10.1039/C3NR03082B
Article type
Communication
Submitted
14 Jun 2013
Accepted
11 Aug 2013
First published
12 Aug 2013

Nanoscale, 2013,5, 8940-8944

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Origin of the self-limited electron densities at Al2O3/SrTiO3 heterostructures grown by atomic layer deposition – oxygen diffusion model

S. W. Lee, J. Heo and R. G. Gordon, Nanoscale, 2013, 5, 8940 DOI: 10.1039/C3NR03082B

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