Issue 6, 2013

Dithiazole-fused naphthalene diimides toward new n-type semiconductors

Abstract

A simple synthetic approach to dithiazole-fused naphthalene diimides 1 and 2 from 2,6-dibromoNDI (2BrNDI) was described. Note that the synthesis did not involve any metallic catalysts. Based on their cyclic voltammograms, the LUMO energies of 1 and 2 were estimated to be −3.99 eV and −3.98 eV, respectively, being lower than that of unsubstituted NDI. Thin films of 1 and 2 show n-type semiconducting behaviors. OFETs of 1 exhibit electron mobility up to 0.15 cm2 V−1 s−1 with high on/off ratio (under ambient conditions) after annealing.

Graphical abstract: Dithiazole-fused naphthalene diimides toward new n-type semiconductors

Supplementary files

Article information

Article type
Paper
Submitted
01 Oct 2012
Accepted
09 Nov 2012
First published
12 Nov 2012

J. Mater. Chem. C, 2013,1, 1087-1092

Dithiazole-fused naphthalene diimides toward new n-type semiconductors

X. Chen, Y. Guo, L. Tan, G. Yang, Y. Li, G. Zhang, Z. Liu, W. Xu and D. Zhang, J. Mater. Chem. C, 2013, 1, 1087 DOI: 10.1039/C2TC00308B

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