Efficient work-function engineering of solution-processed MoS2 thin-films for novel hole and electron transport layers leading to high-performance polymer solar cells

Abstract

The work-function of MoS₂ interfacial layers can be efficiently modulated by p- and n-doping treatments. As a result, the PCE of devices with a p-doped MoS₂-based HTL is increased from ∼2.8 to ∼3.4%. Particularly, after n-doping the PCE was dramatically increased due to the change in work-function compared with un-doped MoS₂ thin-films.