Issue 30, 2013
From the journal:

Journal of Materials Chemistry C

Highly sensitive piezoresistance behaviors of n-type 3C-SiC nanowires†

Jinghui Bi,abc   Guodong Wei,b   Lin Wang,b   Fengmei Gao,b   Jinju Zheng,b   Bin Tang*a  and  Weiyou Yang*b  

* Corresponding authors

a Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan City, P.R. China
E-mail: tangbin@tyut.edu.cn

b Institute of Materials, Ningbo University of Technology, Ningbo City, P.R. China
E-mail: weiyouyang@tsinghua.org.cn

c College of Applied Science, Taiyuan University of Science and Technology, Taiyuan City, P.R. China

Abstract

We reported the piezoresistance behaviors of n-type 3C-SiC nanowires, which show that the present SiC nanowires could be an excellent candidate for building robust pressure sensors with high sensitivities.

Graphical abstract: Highly sensitive piezoresistance behaviors of n-type 3C-SiC nanowires

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Article information

DOI
https://doi.org/10.1039/C3TC30655K
Article type
Communication
Submitted
09 Apr 2013
Accepted
18 Jun 2013
First published
18 Jun 2013

J. Mater. Chem. C, 2013,1, 4514-4517

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Highly sensitive piezoresistance behaviors of n-type 3C-SiC nanowires

J. Bi, G. Wei, L. Wang, F. Gao, J. Zheng, B. Tang and W. Yang, J. Mater. Chem. C, 2013, 1, 4514 DOI: 10.1039/C3TC30655K

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