Issue 97, 2014

Structural and optical properties of Al2xIn2−2xO3 films prepared by metal-organic chemical vapor deposition

Abstract

Tunable band gap Al2xIn2−2xO3 films with different compositions x[Al/(Al + In) atomic ratio] were grown on MgO (110) substrates by the metal organic chemical vapor deposition (MOCVD) method at a temperature of 700 °C. The effects of different Al concentrations on the structural and optical properties of the obtained films were discussed in detail. The film deposited with an Al concentration of x = 0.1 showed single crystalline bixbyite In2O3 structure with Al0.2In1.8O3 (110)‖MgO (110), while the films with x = 0.3 and 0.5 had polycrystalline structures, and the sample prepared with x = 0.9 exhibited γ-Al2O3 structure. The transmittances of all the samples exceeded 80% in the visible region. The optical absorption edges of the films shifted to short wavelength, and the bandgap of the prepared films could be monotonously modulated from 3.73 eV to 5.82 eV as the Al concentration increased from 0.1 to 0.9.

Graphical abstract: Structural and optical properties of Al2xIn2−2xO3 films prepared by metal-organic chemical vapor deposition

Article information

Article type
Paper
Submitted
25 Sep 2014
Accepted
06 Oct 2014
First published
28 Oct 2014

RSC Adv., 2014,4, 54300-54306

Structural and optical properties of Al2xIn2−2xO3 films prepared by metal-organic chemical vapor deposition

Z. Li, C. Zhao, X. Du, W. Mi, C. Luan, X. Feng and J. Ma, RSC Adv., 2014, 4, 54300 DOI: 10.1039/C4RA11180J

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