Electrical characterization of TiO2/CH3NH3PbI3 heterojunction solar cells†
Abstract
TiO2/CH3NH3PbI3 heterojunction solar cells were fabricated by spin-coating and characterized by current–voltage measurements, impedance spectroscopy and capacitance–voltage measurements. It was demonstrated that the TiO2/CH3NH3PbI3 layers form an ideal p–n heterojunction suitable for the photovoltaic applications. The active acceptor concentration of 9.67 × 1015 cm−3 in the CH3NH3PbI3 layer and the built-in potential of 0.67 eV in the TiO2/CH3NH3PbI3 heterojunction were derived by the Mott–Schottky relationship. Numerical simulations showed that the acceptor concentration in the CH3NH3PbI3 layer greatly influenced the electron potential barrier height at the junction interface. The degradation of TiO2/CH3NH3PbI3 heterojunction solar cells showed that the efficiency remained 35.5% after storage under ambient laboratory conditions for 15 days. These results indicated that the oriented TiO2 layers provide a possible route to fabricate stable perovskite-based photovoltaic devices without hole transporting materials.