Issue 46, 2014

Point defect-assisted doping mechanism and related thermoelectric transport properties in Pb-doped BiCuOTe

Abstract

In this article we report point defect-assisted doping mechanism and related thermoelectric transport properties in Pb-doped BiCuOTe compounds. The substitution of trivalent Bi3+ with divalent Pb2+ led to the generation of more than one hole per single Pb atom. The origin of the extra charge carrier was discussed in terms of the formation energy of p-type native point defects, and it could be evidenced by the density functional theory calculations. Related charge transport properties indicated that control of the native point defect is critical to achieve high thermoelectric performance in BiCuOTe material system.

Graphical abstract: Point defect-assisted doping mechanism and related thermoelectric transport properties in Pb-doped BiCuOTe

Supplementary files

Article information

Article type
Paper
Submitted
07 Aug 2014
Accepted
06 Oct 2014
First published
06 Oct 2014

J. Mater. Chem. A, 2014,2, 19759-19764

Author version available

Point defect-assisted doping mechanism and related thermoelectric transport properties in Pb-doped BiCuOTe

T. An, Y. S. Lim, H. Choi, W. Seo, C. Park, G. Kim, C. Park, C. H. Lee and J. H. Shim, J. Mater. Chem. A, 2014, 2, 19759 DOI: 10.1039/C4TA04057K

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